FMD5N50E5

FMD5N50E5 Silicon N-Channel Power MOSFET General Description： FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, VDSS 500 V ID 5 A Trr 85 ns 1.25 Ω is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in RDS(ON)Typ various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features ：  Fast body diode eliminates the need for external diode in ZVS applications.  Lower Gate charge results in simpler drive requirements  Higher Gate voltage threshold offers improved noise immunity Applications：  Motor Control applications  Uninterruptible Power Supplies  Zero Voltage Switching SMPS Absolute(Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-to-Source Voltage a1 V 5 A 2.9 A Pulsed Drain Current 20 A Gate-to-Source Voltage ±30 V a2 Single Pulse Avalanche Energy 350 mJ a1 Avalanche Energy ,Repetitive 31 mJ Avalanche Current 2.5 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 75 W 0.60 W/°C 150,–55 to 150 °C 300 °C VGS EAS EAR a1 dv/dt a3 PD TJ,T stg Rev1.0 500 Continuous Drain Current TC = 100 °C IDM TL Units Continuous Drain Current ID IAR Rating Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering -1- FMD5N50E5 Electrical Characteristics(Tc= 25°C unless otherwise specified) OFF Characteristics Symbol VDSS ΔBVDSS/ΔTJ I DSS Parameter Rating Test Conditions Drain to Source Breakdown Voltage Bvdss Temperature Coefficient Typ. Max. 500 -- -- V -- 0.55 -- V/ °C VDS =500V, VGS= 0V, Ta = 25°C VDS =400V, VGS= 0V, Ta = 125°C -- -- 1 µA -- -- 10 µA VGS= 30V -- -- 100 nA VGS =-30V -- -- -100 nA ID=250uA,Reference25°C IGSS(F) IGSS(R) Gate to Source Reverse Leakage its Min. VGS=0V, ID=250µA Drain to Source Leakage Current Gate to Source Forward Leakage Un ON Characteristics Symbol Parameter Rating Test Conditions RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=2.5A VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA Min. Typ. -1.25 -3.0 Units Max. 1.5 Ω 5.0 V Pulse width tp≤380µs, δ ≤2% Dynamic Characteristics Symbol Parameter gfs Forward Transconductance Ciss Input Capacitance Rating Test Conditions VDS=15V, ID =2.5A VGS =0 V VDS = 25V f = 1.0MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Units Min. -- Typ. 5.0 Max. -- -- 775 -- -- 79 -- -- 9.5 -- S pF Resistive Switching Characteristics Symbol Parameter td(ON) Turn-on Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge ID =5A VDD = 250V RG =25Ω Qgs Gate to Source Charge Qgd Gate to Drain (“Miller”)Charge Rev1.0 Rating Test Conditions ID = 5A VDD =250V VGS = 10V -2- Units Min. -- Typ. 12 Max. -- -- 46 -- -- 50 -- -- 48 -- -- 19 -- 4.0 -- 8.0 ns nC FMD5N50E5 Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter Rating Test Conditions Units Min. Typ. Max. -- -- 5 A -- -- 20 A IS=5.0A,VGS=0V -- -- 1.5 V Reverse Recovery Time IS=5.0A,T j = 25°C -- 85 -- ns Reverse Recovery Charge dIF/dt=100A/us, VGS=0V -- 265 -- nC Continuous Source Current (Body Diode) Maximum Pulsed Current (Body Diode) Diode Forward Voltage Pulse width tp ≤380µs, δ ≤2% Symbol Parameter Typ. Units RθJC Junction-to-Case 1.67 ℃/W RθJA Junction-to-Ambient 62.5 ℃/W a1 Repetitive rating; pulse width limited by maximum junction temperature a2 L=10mH, ID=8A, Start TJ=25℃ a3 ISD =5A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ Rev1.0 -3- FMD5N50E5 Characteristics Curve 80 PD , Power Dissipation ,Watts Id , Drain Current , Amps 100 10 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) TJ=MAX RATED TC=25°C Single Pulse 0 .1 100ms DC 70 60 50 40 30 20 10 0 0 .0 1 1 10 100 V d s , D ra in -to -S o u rc e V o lta g e , V o lts 1000 0 Figure 1 Maximun Forward Bias Safe Operating Area 125 150 Figure 2 Maximun Power Dissipation vs Case Temperature 6 6 5 Id , Drain Current , Amps Id , Drain Current , Amps 75 100 50 TC , Case Temperature , °C 25 4 3 2 PULSE DURATION=10µs DUTY FACTOR=0.5%MAX Tc =25°C VGS=15V 4.5 VGS=7V 3 VGS=6V VGS=6.5V 1.5 VGS=4.5V VGS=5.5V 1 0 0 0 25 75 1 00 125 50 TC , C a se Te m p e ra tu re , °C 1 50 Figure 3 Maximum Continuous Drain Current vs Case Temperature 0 5 10 15 20 Vds , Drain-to-Source Voltage , Volts 25 Figure 4 Typical Output Characteristics Thermal Impedance, Normalized 1 50% 20% 0.1 10% 5% PDM 2% 0.01 Single pulse 0.001 0.00001 1% NOTES DUTY FACTOR D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 0.0001 0.001 0.01 Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance , Junction to Case Rev1.0 t1 t2 -4- 0.1 1 FD5N50E5 100 FOR TEMPERATURES ABOVE 25°C DERATE PEAK CURRENT AS FOLLOWS: Idm , Peak Current , Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION  150  TC I  I 25  125     10 1 1.00E-05 1.00E-04 1.00E-03 Rds(on), Drain to Source ON Resistance , Ohms PULSE DURATION = 10µs DUTY CYCLE = 0.5%MAX VDS=30V 7.5 6 4.5 3 -55°C +25°C 1.5 +150°C 0 3 4 5 Vgs , Gate to Source Voltage , Volts 1.00E+01 PULSE DURATION = 10µs DUTY FACTOR = 0.5%MAX Tc =25°C 5 4 ID= 5A ID= 2.5A 3 ID= 1.25A 2 1 6 Rds(on), Drain to Source ON Resistance, Nomalized 3 PULSE DURATION = 10µs DUTY CYCLE= 0.5%MAX Tc =25°C 2.5 VGS=20V 2 4 6 8 10 12 Vgs , Gate to Source Voltage,Volts 14 Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current Figure 7 Typical Transfer Characteristics Rds(on), Drain to Source ON Resistance, Ohms 1.00E+00 0 2 1.5 2.5 2.25 2 PULSE DURATION = 10µs DUTY CYCLE= 0.5%MAX VGS=10V ID=2.5A 1.75 1.5 1.25 1 0.75 0.5 1 0 1 2 3 Id , Drain Current , Amps 4 -50 0 50 100 Tj, Junction temperature , C Figure 10 Typical Drian to Source on Resistance vs Junction Temperature Figure 9 Typical Drain to Source ON Resistance vs Drain Current Rev1.0 1.00E-01 Figure 6 Maximun Peak Current Capability 6 9 Id , Drain Current , Amps 1.00E-02 t ,Pulse Width , Seconds -5- 150 FMD5N50E5 1.1 1.1 Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs(th),Threshold Voltage, Nomalized 1.15 1.05 1 0.95 0.9 0.85 0.8 0.75 VGS=0V ID=250µA 0.7 0.65 -75 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction temperature , °C -55 10000 -5 20 45 70 95 120 Tj, Junction temperature , °C 145 170 Vgs , Gate to Source Voltage ,Volts 12 1000 Ciss Coss 100 Crss 10 VGS=0V , f=1MHz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd 1 VDS=150V VDS=250V VDS=400V 10 8 6 4 2 ID=5.0A 0 0.1 1 10 Vds , Drain - Source Voltage , Volts 100 0 Figure 13 Typical Capacitance vs Drain to Source Voltage 2 4 6 8 10 12 14 Qg , Total Gate Charge , nC 16 18 20 Figure 14 Typical Gate Charge vs Gate to Source Voltage 8 100 7 Id , Drain Current , Amps Isd, Reverse Drain Current , Amps -30 Figure 12 Typical Breakdown Voltage vs Junction Temperature Figure 11 Typical Theshold Voltage vs Junction Temperature Capacitance , pF VGS=0V ID=250µA 6 5 4 3 +150°C 2 +25°C 0.2 0.4 0.6 0.8 1 Vsd , Source - Drain Voltage , Volts 1.2 1 Figure 16 Unclamped Inductive Switching Capability Figure 15 Typical Body Diode Transfer Characteristics Rev1.0 STARTING Tj = 150°C 0.1 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 tav,Time in Avalanche,Seconds 0 0 10 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD) If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1] R equals total Series resistance of Drain circuit -55°C 1 STARTING Tj = 25°C -6- FMD5N50E5 TestCircuitandWaveform Rev1.0 -7- FD5N50E5 Rev1.0 -8- FD5N50E5 Package Information Values(mm) Items MIN MAX A 6.30 6.80 B 5.20 6.20 C 2.10 2.50 D 0.40 0.60 E1 0.60 0.80 E2 0.70 0.90 F 0.40 0.60 G 0.80 1.00 L1 9.70 10.20 L2 2.70 3.10 H 0.60 0.90 M 5.10 5.50 N 2.09 2.49 R 0.3 T 1.40 1.60 Y 5.10 6.30 TO-252 Package Rev1.0 -9- FMD5N50E5 The name and content of poisonous and harmful material in products Part’s Name Limit Hazardous Pb ≤0.1% Substance Hg Cd Cr(VI) PBB PBDE ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% Lead Frame O O O O O O Molding Compound O O O O O O Chip O O O O O O Wire Bonding O O O O O O Solder X O O O O O O means the hazardous material is under the criterion of SJ/T11363-2006. X means the hazardous material exceeds the criterion of SJ/T11363-2006. Note The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS. Warnings 1. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. 4. Rev1.0 This publication is made by Fortior technology and subject to regular change without notice. - 10 -