SD103AW

DongGuan Tongke Electronic Co.,LTD SOD-123 Plastic-Encapsulate Diodes SD103AW-SD103CW SOD-123 SCHOTTKY BARRIER DIODE FEATURES z Low forward voltage drop z Guard ring construction for transient protection z Negligible reverse recovery time z Low reverse capacitance MARKING: SD103AW: S4 SD103BW: S5 SD103CW: S6 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) SD103AW SD103BW SD103CW Unit 40 30 20 V 28 21 14 V Forward Continuous Current IFM 350 mA Repetitive Peak Forward Current @t≤1.0s IFRM 1.5 A Power Dissipation Thermal Resistance Junction to Ambient Pd RθJA 500 250 mW ℃/W Storage Temperature TSTG -55~+150 ℃ Electrical Ratings @Ta=25℃ Parameter Reverse breakdown voltage SD103AW SD103BW SD103CW Forward voltage Reverse current Symbol Min 40 V (BR)R 30 Unit Conditions IR=100μA V IR=100μA IR=100μA 0.37 VF SD103AW SD103BW SD103CW Max 20 0.60 IRM 5.0 IF=20mA V IF=200mA VR=30V μA VR=20V VR=10V Capacitance between terminals Reverse recovery time Typ CT 50 trr 10 1 pF ns VR=0V,f=1.0MHz IF=IR=200mA Irr=0.1XIR,RL=100Ω www.tongke888.com 400-6922-883 DongGuan Tongke Electronic Co.,LTD Typical Characteristics Forward Characteristics Reverse (uA) 1000 100 o T= a 25 10 C T= a 1 00 o C REVERSE CURRENT IR IF (mA) 1000 FORWARD CURRENT SD103AW 1 0.1 Characteristics o Ta=100 C 100 10 o Ta=25 C 1 0.1 0 100 200 300 400 FORWARD VOLTAGE 500 600 VF 700 800 0 5 10 (mV) 15 20 25 REVERSE VOLTAGE 30 VR 35 40 (V) Power Derating Curve Capacitance Characteristics 100 500 o (mW) 400 PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25 C f=1MHz 10 1 300 200 100 0 0 5 10 REVERSE VOLTAGE 15 VR 20 0 25 50 75 100 AMBIENT TEMPERATURE (V) 2 125 Ta www.tongke888.com 150 o ( C) 400-6922-883