1N5819W

1N5817W-1N5819W 1A Surface Mount Schottky Barrier Diode PINNING Features DESCRIPTION PIN For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817W: 1N5818W: 1N5819W: Simplified outline SOD-123 SJ SK SL and symbol Absolute Maximum Ratings (Ta = 25 C) O Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) Operating Temperature Range bl u O Parameter Reverse Breakdown Voltage at IR = 1 mA Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Forward Voltage at IF = 0.1 A at IF = 1 A at IF = 3 A Total Capacitance at VR = 4 V, f = 1 MHz Page 1 of 5 VR 20 30 40 V IF(AV) 1 A IFSM 25 A Ptot 500 mW Tj 125 O Tstg - 55 to + 125 O C C ec Storage Temperature Range Characteristics at Ta = 25 C Unit ol Power Dissipation Value ou 1N5817W 1N5818W 1N5819W Reverse Voltage Symbol r Parameter Symbol 1N5817W 1N5818W 1N5819W 1N5817W 1N5818W 1N5819W 1N5819W 1N5819W 1N5819W 1N5817W 1N5818W 1N5819W V (BR)R IR VF 1N5817W 1N5818W 1N5819W Ctot Min. Max. 20 30 40 - - 1 1 1 0.05 0.075 - 0.45 0.45 0.55 0.6 - 0.75 0.875 0.9 - 120 Unit V mA V pF REV01: 09/2011 1N5817W Typical Characteristics o C =2 5 a T 0.2 0.4 o VF 0.1 o Ta=25 C 0.01 1E-3 0.8 0 5 (V) 10 15 REVERSE VOLTAGE 20 VR 25 (V) Capacitance Characteristics 600 Power Derating Curve 100 10 0.1 1 REVERSE VOLTAGE Page 2 of 5 10 VR 100 (V) (mW) 500 400 POWER DISSIPATION ec f=1MHz PD ol Ta=25℃ bl u CAPACITANCE BETWEEN TERMINALS CT (pF) 1000 ou r FORWARD VOLTAGE 0.6 Characteristics Ta=100 C 1 REVERSE CURRENT IR o C =1 00 a 0.1 0.01 0.0 Reverse 10 1 T FORWARD CURRENT Characteristics (mA) Forward IF (A) 5 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃) REV01: 09/2011 1N5818W Typical Characteristics Forward Characteristics Reverse 10 3 Pulesd (mA) (A) =2 5℃ a T Ta=100℃ 1 REVERSE CURRENT IR =1 00 ℃ a T FORWARD CURRENT 0.1 Ta=25℃ 0.01 1E-3 0.6 1.0 0.8 FORWARD VOLTAGE VF 0 1.2 (V) Capacitance Characteristics 10 30 20 REVERSE VOLTAGE r 0.4 0.2 ou IF 1 0.1 0.0 Characteristics Pulesd 40 (V) VR Power Derating Curve 600 200 ol 120 80 40 0 PD POWER DISSIPATION ec 160 (mW) f=1MHz bl u CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 500 400 300 200 100 0 0 4 8 12 REVERSE VOLTAGE Page 3 of 5 16 VR (V) 20 0 25 50 100 75 AMBIENT TEMPERATURE Ta 125 (℃) REV01: 09/2011 1N5819W Typical Characteristics Forward 10 Characteristics Reverse 10 Pulsed REVERSE CURRENT IR a =2 5℃ a T Ta=100℃ 1 0.1 Ta=75℃ 0.01 Ta=25℃ 1E-3 0.8 1.2 FORWARD VOLTAGE 1.6 VF 2.0 1 (V) 10 20 30 REVERSE VOLTAGE r 0.4 Capacitance Characteristics ou FORWARD CURRENT T IF =1 00 ℃ (A) (mA) Pulsed 1 0.1 0.0 Characteristics 40 VR (V) Power Derating Curve 600 200 ol 120 80 40 0 PD POWER DISSIPATION ec 160 (mW) f=1MHz bl u CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 500 400 300 200 100 0 0 4 8 12 REVERSE VOLTAGE Page 4 of 5 16 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) REV01: 09/2011 PACKAGE OUTLINE SOD-123 bl u ec ol ou r Plastic surface mounted package; 2 leads Page 5 of 5 REV01: 09/2011