ESD5451N-2/TR

ESD5451N ESD5451N 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5451N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. DFN1006-2L (Bottom View) The ESD5451N may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 8A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD5451N is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±5V Max  Transient protection for each line according to 2 Pin1 IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 8A (8/20μs) 2 = Device code  Capacitance: CJ = 17.5pF typ.  Low leakage current: IR < 1nA typ.  Low clamping voltage: VCL = 9V typ. @ IPP = 16A (TLP)  Solid-state silicon technology * = Month code ( A~Z) Marking (Top View) Order information Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. * Pin2 Device Package Shipping ESD5451N-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.5, 2017/09/18 ESD5451N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 80 W Peak pulse current (tp = 8/20μs) IPP 8 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Operation junction temperature Storage temperature kV ±30 125 o TL 260 o TSTG -55~150 o TJ Lead temperature ±30 C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.5, 2017/09/18 ESD5451N o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit ±5 V 100 nA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V VBR IBR = 1mA 5.1 V IHOLD = 50mA 5.1 V Reverse breakdown voltage Reverse holding voltage VHOLD