MMBT2222A

MMBT2222/MMBT2222A FEATURES NPN Switching Transistor IMUM RATINGS MAXIMUM MAX Symbol MMBT2222 MMBT2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage VEBO 5.0 6.0 Vdc Ic 600 600 mAdc Characteristic Collector Current-Continuous THERMAL CHARACTERISTICS Symbol Max Unit PD 225 mW 1.8 mW/℃ 300 mW 2.4 mW/℃ RΘJA 417 ℃/W Solder Temperature/Solder Time T/t 260/10 ℃/S Junction & Storage Temperature TJ,Tstg Characteristic Total Device Dissipation FR-5 Board(1) TA=25℃ Derate above25℃ Total Device Dissipation Alumina Substrate,(2)TA=25℃ Derate above25℃ PD Thermal Resistance Junction to Ambient www.slkormicro.com 1 -55to+150℃ MMBT2222/MMBT2222A ELECTRICAL CHARACTERISTICS =25℃ unless otherwise noted ) (TA=25 Characteristic Symbol Collector-Emitter Breakdown Voltage(3) (Ic=10mAdc,IB=0) Collector-Base Breakdown Voltage (Ic=10μAdc,IE=0) V(BR)CEO Max 30 40 60 75 — — — __ MMBT2222A 5.0 6.0 — Vdc MMBT2222A — 10 nAdc MMBT2222 MMBT2222A — — — — 0.01 0.01 10.0 10.0 Adc MMBT2222A — 100 nAdc MMBT2222A — 20 nAdc — 35 50 75 35 100 50 30 40 — — — — — 0.6 — — — — — — 300 — — — 0.4 0.3 1.6 1.0 1.3 1.2 2.6 2.0 MMBT2222 MMBT2222A V(BR)CBO MMBT2222 MMBT2222A V(BR)EBO MMBT2222 Emitter-Base Breakdown Voltage (IE=10μAdc,Ic=0) Collector Cutoff Current (VCE=60Vdc, VEB(Off)=3.0Vdc) Collector Cutoff Current (VCB=50Vdc,IE=0) (VCB=60Vdc,IE=0) (VCB=50Vdc,IE=0,TA=125℃) (VCB=60Vdc,IE=0,TA=125℃) Emitter Cutoff Current (VEB=3.0Vdc, IC=0) Base Cutoff Current (VCE=60Vdc, VEB(Off)=3.0Vdc) DC Current Gain (Ic=0.1mAdc,VCE=10.0Vdc) (Ic=1.0mAdc,VCE=10.0Vdc) (Ic=10mAdc,VCE=10.0Vdc) (Ic=10mAdc,VCE=10.0Vdc,TA=-55℃) (Ic=150mAdc,VCE=10.0Vdc)(3) (Ic=150mAdc,VCE=1.0Vdc)(3) ICEX Unit Vdc Vdc ICBO MMBT2222A MMBT2222 μ IEBO IBL HFE MMBT2222A MMBT2222 (Ic=500mAdc,VCE=10.0Vdc)(3) MMBT2222A VCE(sat) Collector-Emitter Saturation Voltage (Ic=150mAdc, IB=15mAdc) (Ic=500mAdc, IB=50mAdc) MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBE(sat) Base-Emitter Saturation Voltage (Ic=150mAdc, IB=15mAdc) (Ic=500mAdc, IB=50mAdc) www.slkormicro.com Min MMBT2222 MMBT2222A MMBT2222 MMBT2222A 2 Vdc Vdc MMBT2222/MMBT2222A SMALL-SIGNAL CHARACTERISTICS Characteristic Symbol Min Max Unit 250 300 — — MHz Cobo — 80 pF Cibo MMBT2222 — — 30 25 pF 2.0 0.25 8.0 1.25 kQ — — 8.0 4.0 ×10 50 75 300 375 — 5.0 25 35 200 μ mhos MMBT2222A — 150 ps MMBT2222A — 4.0 dB Symbol Min Max Unit td tr ts tf — 10 — — — 25 225 60 fT Current-Gain-Bandwidth Product (Ic=20mAdc,VCE=20Vdc,f=100MHz) Output Capacitance (VCB=10.0Vdc, IE=0, f=1.0MHz) Intput Capacitance (VEB=0.5Vdc, IC=0, f=1.0MHz) Intput Impedance (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) Voltage Feedback Radio (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) Small-Signal Current Gain (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) Output Admittance (Ic=1.0mAdc,VCE=10Vdc,f=1.0kHz) (Ic=10mAdc,VCE=10Vdc,f=1.0kHz) MMBT2222 MMBT2222A MMBT2222A hie MMBT2222A MMBT2222A hre MMBT2222A MMBT2222A -4 hfe MMBT2222A MMBT2222A hoe MMBT2222A MMBT2222A Collector-Base Time Constant (IE=20mAdc,VCB=20Vdc,f=31.8MHz) Noise Figure (Ic=100uAdc,VCE=10Vdc,Rs=1.0kQ,f=1.0kHz) rb,Cc NF SWITCHING CHARACTERISTICS Characteristic Delay Time Rise Time Storage Time Fall Time (Vcc=30Vdc,VBE(off)=-0.5Vdc Ic=150mAdc,IB1=15mAdc) (Vcc=30Vdc,Ic=150mAdc, IB1=IB2=15mAdc) 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width