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BSS123

BSS123

  • 厂商:

    ANBON(安邦)

  • 封装:

    SOT-23

  • 描述:

  • 数据手册
  • 价格&库存
BSS123 数据手册
BSS123 N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 5.0Ω@10V 100V 0.2A 5.5Ω@4.5V Feature Application Advanced trench process technology Small Servo Motor Controls Voltage Controlled Small Signal Switch Power MOSFET Gate Drivers Switching Application Circuit diagram Package SOT-23 Marking B123. Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150164 2003/03/08 2018/05/16 E 4 BSS123 N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 0.2 A Pulsed Drain Current IDM 0.8 A Power Dissipation PD 0.35 W RθJA 357 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Thermal Resistance from Junction to Ambient ℃/W ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =250µA 2.5 V Gate threshold voltage Drain-source on-resistance 1) RDS(on) 100 V 1.0 VGS =10V, ID =0.2A 5.0 VGS =4.5V, ID =0.175A 5.5 Ω 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time 14 VDS =50V,VGS =0V,f =1MHz 10 pF 5 VDS =50V,VGS =10V, ID =0.2A 1.8 nC 1.7 9 VDD=50V,VGS=10V, ID =0.2A,RGEN=6Ω nS 17 tf 7 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=0.2A 0.2 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150164 2003/03/08 2018/05/16 E 4 BSS123 N-Channel Channel Enhancement Mode MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 3 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-3150164 164 2003/03/08 2018/05/16 E 4
BSS123 价格&库存

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BSS123
  •  国内价格 香港价格
  • 1+1.144661+0.14317
  • 10+0.7016310+0.08776
  • 100+0.42861100+0.05361
  • 500+0.30974500+0.03874
  • 1000+0.270921000+0.03389

库存:51509

BSS123
  •  国内价格 香港价格
  • 3000+0.221283000+0.02768
  • 6000+0.196176000+0.02454
  • 9000+0.183349000+0.02294
  • 15000+0.1689015000+0.02113
  • 21000+0.1603421000+0.02006
  • 30000+0.1520230000+0.01902
  • 75000+0.1337275000+0.01673
  • 150000+0.12240150000+0.01531
  • 300000+0.11288300000+0.01412

库存:51509