VBZA4606

VBZA4606 www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) 30 - 30 0.015 at VGS = 10 V 9 0.020 at VGS = 4.5 V 8 0.021 at VGS = - 10 V -8 0.028 at VGS = - 4.5 V -7 13 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS 12 • Motor Drive D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current TC = 25 °C TA = 25 °C Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH 9 8 -8 8 -7 7 60 -6 -7 - 60 - 3.6 ISM - 1.6b, c - 60 IAS 20 - 20 15 EAS 20 TC = 25 °C 6.1 5.2 3 3.1 3b, c 3b, c PD TA = 70 °C 2.28b, c TJ, Tstg Operating Junction and Storage Temperature Range A 3.6 TC = 70 °C TA = 25 °C V 1.6b, c 60 IS Unit mJ W 2.28b, c - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Symbol Typ. Max. t ≤ 10 s RthJA 20 Steady State RthJF 10 P-Channel Typ. Max. 32.5 27 32.5 20 19 28 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel). e. Package limited. 1 VBZA4606 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Min. Test Conditions Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 30 VGS = 0 V, ID = - 250 µA P-Ch - 30 ID = 250 µA N-Ch V 30 ID = - 250 µA P-Ch - 24 ID = 250 µA N-Ch - 4.1 5 mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 1 2.2 VDS = VGS, ID = - 250 µA P-Ch - 0.9 - 2.5 VDS = 0 V, VGS = ± 20 V N-Ch ± 100 VDS = 0 V, VGS = ± 20 V P-Ch ± 100 VDS = 30 V, VGS = 0 V N-Ch 1 VDS = - 30 V, VGS = 0 V P-Ch -1 VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 40 VDS = - 5 V, VGS = - 10 V P-Ch - 40 VGS = 10 V, ID = 6.8 A N-Ch V nA µA A 0.015 VGS = - 10 V, ID = - 8 A P-Ch 0.021 VGS = 4.5 V, ID = 6.6 A N-Ch 0.020 VGS = - 4.5 V, ID = - 5 A P-Ch 0.028 VDS = 15 V, ID = 6.8 A N-Ch 37 VDS = - 15 V, ID = - 6.7 A P-Ch 35 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 2 Crss Qg P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz Rg 1700 1515 N-Ch 755 P-Ch 800 N-Ch 254 P-Ch 25 pF VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch 20 VDS = - 20 V, VGS = - 10 V, ID = - 10 A P-Ch 20 N-Ch 10 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 10 A P-Ch 33 N-Ch 2.3 P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A P-Ch 5.6 N-Ch 1.7 Qgs Qgd P-Ch N-Ch N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Ch f = 1 MHz N-Ch 0.3 9.8 2.6 P-Ch 1.3 12.8 nC Ω VBZA4606 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 20 V, RL = 2 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 20 V, RL = 3.7 Ω ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω N-Ch 5 10 P-Ch 10 20 N-Ch 10 20 P-Ch 9 18 N-Ch 16 25 P-Ch 50 90 N-Ch 7 14 P-Ch 13 26 N-Ch 11 22 75 P-Ch 42 N-Ch 12 22 P-Ch 40 70 N-Ch 17 26 P-Ch 40 70 N-Ch 7 14 P-Ch 18 35 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage 5.6 P-Ch - 5.6 40 N-Ch ISM VSD N-Ch P-Ch A - 40 IS = 5.4 A N-Ch 0.81 1.2 IS = - 2 A P-Ch - 0.77 - 1.2 N-Ch 17 34 P-Ch 41 80 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 10 20 P-Ch 32 65 Reverse Recovery Fall Time ta P-Channel IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 10 P-Ch 15 Reverse Recovery Rise Time tb N-Ch 7 P-Ch 26 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3 VBZA4606 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 30 VGS = 3 V 20 6 TC = 25 °C 4 10 2 TC = 125 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 1 Output Characteristics 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics 1700 0.040 1500 0.030 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C VGS = 4.5 V 0.020 0.015 Ciss 1300 1100 Coss 700 VGS = 10 V Crss 0 0 8 0 9 10 20 0 10 20 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 6.8 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 6.8 A VDS = 30 V 6 VDS = 20 V VDS = 10 V 4 2 0 0 4 40 3 6 9 12 15 1.6 VGS = 10 V; 4.5 V 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 VBZA4606 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 6.8 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.04 TJ = 125 °C 0.03 TJ = 25 °C 0.02 0.01 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 60 1.9 48 Power (W) ID = 250 μA 1.3 36 24 1 12 0.7 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 Time (s) 1 10 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 ID - Drain Current (A) VGS(th) (V) 1.6 100 μs 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 1s 10 s DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 5 VBZA4606 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 12 ID - Drain Current (A) 11 10 9 8 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4 1.25 1.0 Power (W) Power (W) 3 2 0.75 0.50 1 0.25 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 VBZA4606 www.VBsemi.com N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 7 VBZA4606 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 V GS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 V GS = 3 V 6 4 T C = 25 °C 8 2 T C = 125 °C 0 0.0 T C = - 55 °C V GS = 2 V 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 0 0 2.5 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 5 Transfer Characteristics 1700 0.030 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1500 0.025 0.020 VGS = 10 V Ciss 1300 1100 Coss 0.015 700 Crs s 0 7 0 8 ID - Drain Current (A) 0 9 0 10 10 20 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 10 ID = 8 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 10 A 8 V DS = 15 V 6 V DS = 10 V V DS = 24 V 4 2 0 0 9 18 27 Qg - Total Gate Charge (nC) Gate Charge 8 40 36 45 1.6 V GS = 10 V 1.4 V GS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 On-Resistance vs. Junction Temperature 150 VBZA4606 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.15 100 ID = 8 A 0.12 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 150 °C 1 0.1 T J = 25 °C 0.09 0.06 T J = 125 °C 0.03 0.01 T J = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 1 3 2 4 5 6 8 7 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 50 40 ID = 5 mA 0.2 Power (W) ID = 250 μA 30 20 - 0.1 10 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 TJ - Temperature (°C) 0.1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.01 1 10 100 Limited by RDS(on) * 10 ID - Drain Current (A) VGS(th) Variance (V) 0.5 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 1s 10 s DC 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient 9 VBZA4606 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 11 ID - Drain Current (A) 10 9 8 7 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 4.0 1.5 3.2 1.2 2.4 0.9 Power (W) Power (W) Current Derating* 1.6 0.8 0.6 0.3 0.0 0.0 0 25 100 50 75 TC - Case Temperature (°C) 125 Power Derating, Junction-to-Foot 150 0 25 100 125 50 75 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 10 VBZA4606 www.VBsemi.com P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 11 VBZA4606 www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 12 INCHES DIM e 0.101 mm VBZA4606 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) 13 VBZA4606 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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