VBTA4250N

VBTA4250N www.VBsemi.com Dual P-Channel -20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () ID (A) 0.65 at VGS = -4.5 V -0.30 0.84 at VGS = -2.5 V -0.25 1.20 at VGS = -1.8 V -0.18 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V 0.75 APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits SC-75-6 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Symbol VDS VGS TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg Operating Junction and Storage Temperature Range Limit Unit -20 ± 12 V -0.30a, b -0.15a, b -2 A A -0.18a, b 0.22a, b 0.14a, b - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Symbol t 5 s Steady State RthJA Typ. Max. 470 565 560 675 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. 1 VBTA4250N www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = -250 µA -20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs ID = -250 µA VDS = VGS, ID = -250 µA VDS = 0 V, VGS = ± 8 V V -17 - 1.8 -0.5 mV/°C -1.5 ± 30 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = -20 V, VGS = 0 V VDS= -20 V, VGS = 0 V, TJ = 85 °C -1 -3 DS = ≥ - 5 V, VGS = -4.5 V V µA A -2 VGS = -4.5 V, ID = -0.3A 0.650 VGS = -2.5 V, ID = -0.25A 0.840 VGS = -1.8 V, ID = -0.18A 1.20  VDS = -10 V, ID = -0.3A 7.5 S VDS = 10 V, VGS = 0 V, f = 1 MHz 120 14 pF Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 8 VDS = -10 V, VGS =- 8V, ID = -0.3 A VDS = -10 V, VGS =- 4.5 V, ID = 0.3 A tr 2 1.2 0.15 nC 0.13 f = 1 MHz td(on) td(off) 1.3 0.75 VDD = -10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = -4.5 V, Rg = 1 Ω tf 2.4  12.2 24.4 11 20 16 24 26 39 11 20 -2 A - 0.8 10 - 1.2 15 V ns 2 4 nC ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS =- 0.3 A IF = 0.5 A, dI/dt = 100 A/µs 5 5 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBTA4250N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0E-04 0.8 TJ = 150 °C IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.0E-05 0.6 1.0E-06 0.4 TJ = 25 °C TJ = 25 °C 1.0E-07 0.2 1.0E-08 0 0 2 4 6 8 10 VGS - Gate-Source Voltage (V) 12 14 1.0E-09 0 Gate Current vs. Gate-Source Voltage 11 4 7 VGS - Gate-to-Source Voltage (V) 14 Gate Current vs. Gate-Source Voltage 2 0.5 VGS = 5 V thru 2 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 1.5 VGS = 1.5 V 1 0.3 TC = 25 °C 0.2 0.5 0.1 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 60 0.80 Ciss VGS = 1.8 V 45 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 1.5 V 0.60 VGS = 4.5 V 0.40 30 Coss 15 VGS = 10 V Crss 0 0.20 0 0.5 1 ID - Drain Current (A) 1.5 On-Resistance vs. Drain Current 2 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance 3 VBTA4250N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 VGS - Gate-to-Source Voltage (V) ID = -0.3 A 6 RDS(on) - On-Resistance (Normalized) 8 VDS = -5 V VDS = -10 V 4 VDS = 16 V 2 ID = -0.3 A VGS = -4.5 V 1.4 1.2 1.0 0.8 VGS = -2.5 V 0 0 0.5 1 0.6 - 50 1.5 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.8 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = -0.3A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.2 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 0 Soure-Drain Diode Forward Voltage 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 2.7 0.75 ID = 250 μA 2.25 0.65 Power (W) VGS(th) (V) 1.8 0.55 1.35 0.9 0.45 0.45 0.35 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage 4 125 150 0 0.01 0.1 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient VBTA4250N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.24 10 0.18 BVDSS Limited 100 μs 1 Power (W) ID - Drain Current (A) Limited by RDS(on)* 1 ms 10 ms 0.12 0.1 0.06 100 ms TC = 25 °C Single Pulse 1s 10 s, DC 0.01 0.1 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power Derating, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5 VBTA4250N www.VBsemi.com SC-75-6 E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 4 5 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 6 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 c 0.10 0.14 0.18 D 1.50 1.60 1.70 E 1.50 1.60 1.70 E1 1.15 1.20 1.25 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 VBTA4250N www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SC-75-6: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) 7 VBTA4250N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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