VBTA3615M

VBTA3615M www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES RDS(on) () ID (A) 1.50 at VGS = 4.5V 0.18 1.20 at VGS = 10V 0.20 Qg (Typ.) 0.6 • TrenchFET® Power MOSFET • 100 % Rg Tested • Gate-Source ESD Protected: 1000 V SC75-6 APPLICATIONS S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Symbol VDS VGS TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C ID IDM IS PD TJ, Tstg Operating Junction and Storage Temperature Range Limit Unit 60 ±20 V 0.20a, b 0.40a, b 2 A 0.18a, b 0.22a, b 0.14a, b - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Symbol t 5 s Steady State RthJA Typ. Max. 470 565 560 675 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. 1 VBTA3615M www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance RDS(on) gfs V 17 mV/°C - 1.8 VDS = 0 V, VGS = ± 8 V 2.5 ± 30 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = 20 V, VGS = 0 V 1 1.0 VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS =  5 V, VGS = 4.5 V V µA 3 2 A VGS = 4.5 V, ID = 0.18 A 1.5 VGS = 10 V, ID = 0.2 A VDS = 10 V, ID = 0.2 A 1.2  S 7.5 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 31 VDS = 10 V, VGS = 0 V, f = 1 MHz tr 2 VDS = 10 V, VGS = 8 V, ID = 0.2 A 0.75 1.2 0.15 VDS = 10 V, VGS = 4.5 V, ID = 0.2 A nC 0.13 f = 1 MHz td(on) td(off) pF 10 8 VDD = 10 V, RL = 20 Ω ID ≅ 0.2 A, VGEN = 4.5 V, Rg = 1 Ω tf 2.4  12.2 24.4 11 20 16 24 26 39 11 20 0.8 1.2 V 10 15 ns 2 4 nC ns Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 2 IS = 0.5 A IF = 0.5 A, dI/dt = 100 A/µs 5 5 A ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBTA3615M www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.2 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.2 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 0 Soure-Drain Diode Forward Voltage 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 On-Resistance vs. Gate-to-Source Voltage 2.7 0.75 ID = 250 μA 2.25 0.65 Power (W) VGS(th) (V) 1.8 0.55 1.35 0.9 0.45 0.45 0.35 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage 125 150 0 0.01 0.1 1 Time (s) 10 100 Single Pulse Power, Junction-to-Ambient 3 VBTA3615M www.VBsemi.com SC75-6 E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. 4 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 c 0.10 0.14 0.18 D 1.50 1.60 1.70 E 1.50 1.60 1.70 E1 1.15 1.20 1.25 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 VBTA3615M www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SC75-6 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) (1.753) 0.069 (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) 5 VBTA3615M www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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