VBTA2245N

VBTA2245N www.VBsemi.com P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.450 at VGS = -4.5 V -0.55 0.500 at VGS = -2.5 V -0.50 0.600 at VGS = -1.8 V -0.38 VDS (V) -20 Qg (TYP.) (nC) • TrenchFET® power MOSFET • 100 % R tested • Fast switching speed 1 APPLICATIONS • Load / power switch for portable devices S • Drivers: relays, solenoids, displays • Battery operated systems 3 2 1 G G 1 SC−75 / SOT−416 3 S D 2 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range V -0.55 b, c ID -0.45 b, c IDM TA = 25 °C UNIT A -1.8 -0.16 b, c IS 0.19 b, c PD W 0.12 b, c TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, b SYMBOL t≤5s Steady State RthJA TYPICAL MAXIMUM 440 530 540 650 UNIT °C/W Notes a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. 1 VBTA2245N www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = -250 μA -20 - - V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance RDS(on) gfs - -12 - - 1.8 - VDS = VGS, ID = -250 μA -0.4 - -1 ID = -250 μA VDS = 0 V, VGS = ± 8 V - - ± 30 VDS = 0 V, VGS = ± 4.5 V - - ±1 VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 85 °C - - -10 VDS = ≥ 5 V, VGS = -4.5 V -1.5 - - VGS = -4.5 V, ID = -0.4 A - 0.450 - VGS = -2.5 V, ID = -0.2 A - 0.500 - VGS = -1.8 V, ID = -0.1 A - 0.600 - VDS = -10 V, ID = 0.4 A - 1 - - 45 - - 15 - - 10 - - 1.65 2.50 - 1 2 VDS = -0 V, VGS = -2.5 V, ID = -0.4 - 0.2 - - 0.26 - f = 1 MHz 2.4 12 24 - 9 18 mV/°C V μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -4.5 V, ID = -0.4 A td(on) tr td(off) VDD = -10 V, RL = 33.3 Ω ID ≅ -0.3 A, VGEN = -4.5 V, Rg = 1 Ω - 10 20 - 10 20 tf - 8 16 td(on) - 1 2 - 8 16 - 9 18 - 5 10 tr td(off) VDD = -10 V, RL = 33.3 Ω ID ≅ -0.3 A, VGEN = -8 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Pulse Diode Forward Current a ISM Body Diode Voltage VSD IS = -0.3 A - - -1.5 A - -0.8 -1.2 V Body Diode Reverse Recovery Time trr - 16 24 ns Body Diode Reverse Recovery Charge Qrr - 8 16 nC Reverse Recovery Fall Time ta - 11 - Reverse Recovery Rise Time tb - 5 - IF = -0.3 A, dI/dt = 100 A/μs ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBTA2245N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-4 0.010 10-5 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.008 0.006 0.004 TJ = 25 °C TJ = 150 °C 10-6 TJ = 25 °C 10-7 0.002 10-8 0.000 0 3 6 9 12 0 3 VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 6 9 12 VGS - Gate-to-Source Voltage (V) 15 Gate Current vs. Gate-Source Voltage 1.5 0.8 VGS = 5 V thru 3 V VGS = 2.5 V ID - Drain Current (A) ID - Drain Current (A) 1.2 0.9 VGS = 2 V 0.6 0.4 TC = 25 °C 0.2 VGS = 1.5 V 0.3 0.6 TC = 125 °C 0 TC = - 55 °C 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.4 Output Characteristics 1.2 1.6 2 Transfer Characteristics 90 2 72 VGS = 1.8 V 1.5 VGS = 2.5 V 1 0.5 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.8 VGS - Gate-to-Source Voltage (V) 54 Ciss 36 Coss 18 Crss 0 0 0 0.3 0.6 0.9 1.2 ID - Drain Current (A) On-Resistance vs. Drain Current 1.5 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 Capacitance 3 VBTA2245N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 1.5 ID = 0.35 A 6 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.4 A VDS = 5 V VDS = 10 V 4 VDS = 16 V 2 0 0 0.45 0.9 1.35 1.3 VGS = 4.5 V 1.1 0.9 0.7 - 50 1.8 VGS = 2.5 V - 25 Qg - Total Gate Charge (nC) Gate Charge 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature 1.2 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.35 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 1.0 TJ = 125 °C 0.8 TJ = 25 °C 0.6 0.4 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 1.5 1 Source-Drain Diode Forward Voltage 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 8 On-Resistance vs. Gate-to-Source Voltage 0.7 10 8 Power (W) 0.6 VGS(th) (V) 2 ID = 250 μA 0.5 6 4 0.4 2 0.3 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage 4 100 125 150 0 0.001 0.01 0.1 Time (s) 1 Single Pulse Power, Junction-to-Ambient 10 VBTA2245N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.25 0.20 BVDSS Limited 100 μs 1 Power (W) ID - Drain Current (A) Limited by RDS(on)* 1 ms 10 ms 0.15 0.10 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 0.05 1s 10 s, DC 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Ambient Power Derating, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5 VBTA2245N www.VBsemi.com SC-75: 3 Leads L2 A 2 D 1 D bbb D e2 2X D 3 L1 L B1(b1) 3 e1 3 E/2 1 2 E E1 1 1 bbb D 1 2 C bbb C D 4 ddd M C B 3 2X e3 B1 b1 2XB1 A– B B B 2X D c1 C With Tin Planting bbb D Section B-B 5 A A2 Base Metal C 4X Seating Plane A1 D DWG: 5868 Notes Dimensions in millimeters will govern. 1.Dimension D does not include mold flash, protrusions or gate burrs. Mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. Dimension E1 does not include Interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.10 mm per side. 2.Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3.Datums A, B and D to be determined 0.10 mm from the lead tip. 4.Terminal positions are shown for reference only. 5.These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. DIMENSIONS  TOLERANCES aaa 0.10 bbb 0.10 ccc 0.10 ddd 0.10 DIM. MILLIMETERS MIN. NOM. MAX. A - - 0.80 A1 0.00 - 0.10 A2 0.65 0.70 0.80 B1 0.19 - 0.24 b1 0.17 - 0.21 5 c 0.13 - 0.15 5 c1 0.10 - 0.12 5 D 1.48 1.575 1.68 1, 2 E 1.50 1.60 1.70 E1 0.66 0.76 0.86 e1 0.50 BSC e2 1.00 BSC e3 0.50 BSC L 0.15 L1 0.205 0.30 0.40 ref. L2 6 NOTE 0.15 BSC q 0° - 8° q1 4° - 10° 1, 2 VBTA2245N www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SC-75: 3-Lead 0.014 0.031 (0.798) 0.020 (0.503) 0.071 (1.803) (0.356) 0.264 (0.660) 0.054 (1.372) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index 7 VBTA2245N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.