001
VBTA161K
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N-Channel 60V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (mA)
1.2 at VGS = 10 V
60
330
SOT-523
SC-75
G
1
3
S
D
2
Top View
D
• Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 2 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
•
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 100 °C
Pulsed Drain Currenta
Power Dissipationb
Maximum Junction-to-Ambientb
Operating Junction and Storage Temperature Range
ID
IDM
TA = 25 °C
TA = 100 °C
PD
Unit
V
330
290
mA
800
0.35
0.14
W
RthJA
350
°C/W
TJ, Tstg
- 55 to 150
°C
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
1
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SPECIFICATIONS TA = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 10 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
1
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
RDS(on)
2.5
VDS = 0 V, VGS = ± 20 V
± 10
VDS = 0 V, VGS = ± 15 V
1
VDS = 0 V, VGS = ± 10 V
± 150
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
± 1000
VDS = 0 V, VGS = ± 5 V
± 100
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V , TJ = 125 °C
500
VGS = 10 V, VDS = 7.5 V
800
VGS = 4.5 V, VDS = 10 V
500
1.2
VGS = 4.5 V, ID = 200 mA
2
VDS = 10 V, ID = 200 mA
VSD
IS = 200 mA, VGS = 0 V
Qg
VDS = 10 V, VGS = 4.5 V
ID ≅ 250 mA
µA
nA
µA
mA
VGS = 10 V, ID = 500 mA
gfs
V
100
Ω
mS
1.3
V
0.6
nC
Dynamica
Total Gate Charge
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
0.4
30
VDS = 25 V, VGS = 0 V
f = 1 MHz
6
pF
2.5
Switchinga, b, c
Turn-On Time
td(on)
Turn-Off Time
td(off)
VDD = 30 V, RL = 150 Ω
ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω
25
35
ns
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
TJ = - 55 °C
0.8
5V
I D - Drain Current (mA)
I D - Drain Current (A)
1200
7V 6V
VGS = 10 V
0.6
4V
0.4
900
25 °C
125 °C
600
300
0.2
3V
0.0
0
0
1
3
2
4
5
0
1
2
3
Output Characteristics
Transfer Characteristics
6
40
VGS = 0 V
3.5
32
3.0
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
5
VGS - Gate-to-Source Voltage (V)
4.0
2.5
VGS = 4.5 V
2.0
1.5
VGS = 10 V
24
Ciss
16
Coss
1.0
8
Crss
0.5
0
0.0
0
200
400
600
800
0
1000
5
ID - Drain Current (mA)
10
20
25
Capacitance
7
2.0
VGS = 10 V at 500 mA
VDS = 10 V
ID = 250 mA
5
4
3
2
(Normalized)
1.6
R DS(on) - On-Resistance
6
15
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
4
VDS - Drain-to-Source Voltage (V)
1.2
VGS = 4.5 V
at 200 mA
0.8
0.4
1
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
1000
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
VGS = 0 V
100
TJ = 125 °C
10
TJ = 25 °C
4
3
ID = 200 mA
ID = 500 mA
2
1
TJ = - 55 °C
0
1
0.0
0.3
0.6
1.2
0.9
0
1.5
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.4
3
2.5
0.2
2
0.0
Power (W)
VGS(th) Variance (V)
ID = 250 µA
- 0.2
- 0.4
1.5
1
- 0.6
TA = 25 °C
0.5
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
10
1
TJ - Junction Temperature (°C)
100
600
Time (s)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 350 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
100
600
VBTA161K
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C )
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
.
5
VBTA161K
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SC-75A: 3 Leads
L2
A
2
D
1
D bbb
D
e2
2X
D
3
L1
L
B1(b1)
3
e1
3
E/2
1
2
E
E1
1
1
bbb
D
1
2
C
bbb C
D
4
ddd M
C
B
3
2X
e3
B1
b1
2XB1
A– B
B
B
2X
D
c1
C
With Tin Planting
bbb
D
Section B-B 5
A
A2
Base Metal
C
4X
Seating Plane
A1
D
Notes
Dimensions in millimeters will govern.
1. Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2. Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interelead flash, but including any mismatch between the top
and bottom of the plastic body.
3. Datums A, B and D to be determined 0.10 mm from the lead tip.
4. Terminal positions are shown for reference only.
5. These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
6
DIM.
MILLIMETERS
MIN.
NOM.
MAX.
A
-
-
0.80
A1
0.00
-
0.10
A2
0.65
0.70
0.80
B1
0.19
-
0.24
b1
0.17
-
0.21
NOTE
5
c
0.13
-
0.15
c1
0.10
-
0.12
5
D
1.48
1.575
1.68
1, 2
E
1.50
1.60
1.70
E1
0.66
0.76
0.86
e1
0.50 BSC
e2
1.00 BSC
DIMENSIONS
TOLERANCES
e3
aaa
0.10
L
bbb
0.10
L1
ccc
0.10
L2
ddd
0.10
θ
0°
-
8°
θ1
4°
-
10°
0.50 BSC
0.15
0.205
0.30
0.40 ref.
0.15 BSC
5
1, 2
VBTA161K
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RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
0.031
(0.798)
0.020
(0.503)
0.071
(1.803)
(0.356)
0.264
(0.660)
0.054
(1.372)
Recommended Minimum Pads
Dimensions in Inches/(mm)
.
7
VBTA161K
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