WTM3401

WTM3401 P-Channel Power MOSFET Description ■ The WTM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in PWM application. Features ■ V DS = -30V, lD = -4.2A RDS(ON) < 130mΩ @ VGS= -2.5V SOT-23 Top View RDS(ON) < 75mΩ @ VGS= -4.5V RDS(ON) < 55mΩ @ VGS= -10V ■ High power and current handing capability ■ Lead free product is acquired ■ Surface mount package Application ■ Battery protection. ■ Load switch ■ Power management Schematic Diagram Package and order information Device Device Marking Device Package Reel Size Tape width Quantity WTM3401 A19T SOT-23 Ø180mm 8 mm 3000 pcs Absolute Maximum Ratings (TA=25℃, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -4.2 A Drain Current-Pulsed (Note 1) IDM -30 A Maximum Power Dissipation PD 1.2 W TJ & TSTG −55 to +150 °C Symbol Value Unit RθJA 104 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristic Parameter Thermal Resistance and Junction-to-Ambient (Note 2) V1.0_Aug,2018 -1- www.wpmtek.com WTM3401 P-Channel Power MOSFET Electrical Characteristics（TA = 25°C unless otherwise noted） Parameter Symbol Condition Min BVDSS VGS=0V ID = -250μA -30 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V VGS(th) VDS=VGS,ID =-250μA Typ Max Unit - V - -1 μA - - ±100 nA -0.7 -1 -1.3 V 48 55 mΩ Off Characteristics Drain-Source Breakdown Voltage On Characteristics (Note 3) Gate Threshold Voltage VGS=-10V, ID =-4.2A Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS VGS =-4.5V,ID =-4A - 56 75 mΩ VGS =-2.5V,ID =-1A - 72 130 mΩ 10 - S - 880 - PF - 105 - PF VDS=-5V,ID=-4.2A Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 65 - PF Turn-on Delay Time td(on) - 7 - nS Turn-on Rise Time tr VDD =-15V,ID =-4.2A - 3 - nS VGS =-10V,RGEN =6Ω - 30 - nS VDS=-15V,VGS=0V,F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf - 12 - nS Total Gate Charge Qg - 8.5 - nC Gate-Source Charge Qgs - 1.8 - nC Gate-Drain Charge Qgd - 2.7 - nC - - -1.2 V VDS=-15V,ID=-4.2A,VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS =-4.2A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production V1.0_Aug,2018 -2- www.wpmtek.com WTM3401 P-Channel Power MOSFET Typical Electrical and Thermal Characteristics Figure 2 - Switching Waveforms PD Power (W) ID-Drain Current(A) Figure 1 - Switching Test Circuit TJ -Junction Temperature (°C) (°C) Figure 3 - Power Dissipation Figure 4 - Drain Current Rdson On-Resistance(Ω) ID-Drain Current(A) V1.0_Aug,2018 TJ -Junction Temperature Vds Drain-Source Voltage (V) ID-Drain Current(A) Figure 5 - Output Characteristics Figure 6 -Drain-Source On-Resistance -3- www.wpmtek.com WTM3401 ID-Drain Current(A) Normalized On-Resistance P-Channel Power MOSFET TJ -Junction Temperature (°C) Vgs Gate-source Voltage(V) Figure 8 – Drain-Source On-Resistance C Capacitance(pF) Rdson On-Resistance(Ω) Figure 7 – Transfer Characteristics Vgs Drain-source Voltage(V) Figure 9 – Rdson vs Vgs Figure 10 – Capacitance vs Vds Is-Reverse Drain Current(A) Vgs Gate-Source Voltage(V) Vgs Gate-source Voltage(V) Qg Gate Charge (nC) Vsd Source-Drain Voltage(V) Figure 11 –Gate Charge V1.0_Aug,2018 Figure 12–Source-Drain Diode Forward -4- www.wpmtek.com WTM3401 ID- Drain Current(A) P-Channel Power MOSFET Vds Drain-Source Voltage(V) Transient Thermal Impedance r(t), Normalized Effective Figure 13 – Safe Operation Area Square Wave Pulse Duration(sec) Figure 14 – Normalized Maximum Transient Thermal Impedance V1.0_Aug,2018 -5- www.wpmtek.com WTM3401 P-Channel Power MOSFET Soldering Parameters Reflow Condition Pre Heat Pb-Free assembly -Temperature Min (Ts(min)) +150℃ -Temperature Max(Ts(max)) +200℃ -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquid us Temp (TL) to peak) 3℃/sec. Max Ts(max) to TL - Ramp-up Rate 3℃/sec. Max -Temperature(TL) (Liquid us) +217℃ Reflow -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)℃ Time within 5℃ of actual Peak Temp (tp) 30 secs. Max Ramp-down Rate 6℃/sec. Max Time 25℃ to Peak Temp (TP) 8 min. Max Do not exceed V1.0_Aug,2018 +260℃ -6- www.wpmtek.com WTM3401 P-Channel Power MOSFET Package Outline Dimensions (SOT-23) Symbol Dimensions in Millimeters Min Max A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 2.250 1.400 2.550 E1 0.950 TYP e e1 1.800 0.55 REF L L1 θ 2.000 0.300 0° 0.500 8° Recommend PAD Layout Notes: 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. V1.0_Aug,2018 -7- www.wpmtek.com