WTM3400
N-Channel Enhancement Mode Power MOSFET
Description
■ The WTM3400 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
Features
■ V DS = 30V, lD = 5.8A
RDS(ON) < 59mΩ @ VGS=2.5V
RDS(ON) < 45mΩ @ VGS=4.5V
RDS(ON) < 41mΩ @ VGS=10V
■ High power and current handing capability
■ Lead free product is acquired
■ Surface mount package
Application
■ PWM application
■ Load switch
■ Power management
Schematic Diagram
Package and order information
Device
Device Marking
Device Package
Reel Size
Tape width
Quantity
WTM3400
A09T
SOT-23
Ø180mm
8 mm
3000 pcs
Absolute Maximum Ratings (TA=25℃, RH=45%-75%, unless otherwise noted)
Parameter
Symbol
Value
Unit
VDS
30
V
VGS
±12
V
ID
5.8
A
IDM
30
A
PD
1.4
W
TJ & TSTG
−55 to +150
°C
Parameter
Symbol
Value
Unit
Thermal Resistance and Junction-to-Ambient (Note 2)
RθJA
89
℃/W
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
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WTM3400
N-Channel Enhancement Mode Power MOSFET
Electrical Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
BVDSS
VGS=0V ID =250μA
30
33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
VGS(th)
VDS=VGS,ID =250μA
0.7
0.9
1.4
V
VGS=2.5V, ID =4A
-
45
59
mΩ
VGS =4.5V,ID =5A
-
31
45
mΩ
VGS =10V,ID =5.8A
-
28
41
mΩ
VDS=5V,ID=5A
10
-
-
S
-
820
-
PF
-
99
-
PF
Off Characteristics
Drain-Source Breakdown Voltage
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
77
-
PF
Turn-on Delay Time
td(on)
-
3.3
-
nS
Turn-on Rise Time
tr
-
4.8
-
nS
-
26
-
nS
VDS=15V,VGS=0V,F=1.0MHz
Switching Characteristics (Note 4)
Turn-Off Delay Time
td(off)
VDD =15V, RL =2.7Ω
VGS =10V,RGEN =3Ω
Turn-Off Fall Time
tf
-
4
-
nS
Total Gate Charge
Qg
-
9.5
-
nC
Gate-Source Charge
Qgs
-
1.5
-
nC
Gate-Drain Charge
Qgd
-
3
-
nC
-
-
1.2
V
-
-
5.8
A
VDS=15V,ID=5.8A,VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS =5.8A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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WTM3400
N-Channel Enhancement Mode Power MOSFET
Typical Electrical and Thermal Characteristics
Figure 2 - Switching Waveforms
PD Power (W)
ID-Drain Current(A)
Figure 1 - Switching Test Circuit
TJ -Junction Temperature (°C)
Figure 3 - Power Dissipation
(°C)
TJ -Junction Temperature
Rdson On-Resistance(Ω)
ID-Drain Current(A)
Figure 4 - Drain Current
ID-Drain Current(A)
Vds Drain-Source Voltage (V)
Figure 5 - Output Characteristics
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Figure 6 -Drain-Source On-Resistance
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WTM3400
ID-Drain Current(A)
Normalized On-Resistance
N-Channel Enhancement Mode Power MOSFET
TJ -Junction Temperature (°C)
Vgs Gate-source Voltage(V)
Figure 8 – Drain-Source On-Resistance
C Capacitance(pF)
Rdson On-Resistance(Ω)
Figure 7 – Transfer Characteristics
Vgs Drain-source Voltage(V)
Figure 9 – Rdson vs Vgs
Figure 10 – Capacitance vs Vds
Is-Reverse Drain Current(A)
Vgs Gate-Source Voltage(V)
Vgs Gate-source Voltage(V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage(V)
Figure 12 –Source-Drain Diode Forward
Figure 11 –Gate Charge
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WTM3400
ID- Drain Current(A)
N-Channel Enhancement Mode Power MOSFET
Vds Drain-Source Voltage(V)
Transient Thermal Impedance
r(t), Normalized Effective
Figure 13 – Safe Operation Area
Square Wave Pulse Duration(sec)
Figure 14 – Normalized Maximum Transient Thermal Impedance
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WTM3400
N-Channel Enhancement Mode Power MOSFET
Soldering parameters
Reflow Condition
Pre Heat
Pb-Free assembly
-Temperature Min (Ts(min))
+150℃
-Temperature Max(Ts(max))
+200℃
-Time (Min to Max) (ts)
60-180 secs.
Average ramp up rate (Liquid us Temp (TL) to peak)
3℃/sec. Max
Ts(max) to TL - Ramp-up Rate
3℃/sec. Max
-Temperature(TL) (Liquid us)
+217℃
Reflow
-Temperature(tL)
60-150 secs.
Peak Temp (Tp)
+260(+0/-5)℃
Time within 5℃ of actual Peak Temp (tp)
30 secs. Max
Ramp-down Rate
6℃/sec. Max
Time 25℃ to Peak Temp (TP)
8 min. Max
Do not exceed
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+260℃
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WTM3400
N-Channel Enhancement Mode Power MOSFET
Package Outline Dimensions (SOT-23)
Symbol
Dimensions in Millimeters
Min
Max
A
0.900
1.150
A1
0.000
0.100
A2
0.900
1.050
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
1.200
2.250
1.400
2.550
E1
0.950 TYP
e
e1
1.800
0.55 REF
L
L1
θ
2.000
0.300
0°
0.500
8°
Recommend PAD Layout
Notes:
1.
All dimensions are in millimeters.
2.
Tolerance ±0.10mm (4 mil) unless otherwise specified
3.
Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4.
Dimension L is measured in gauge plane.
5.
Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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