WTM2305
P-Channel Enhancement Mode Power MOSFET
Description
■ The WTM2305 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
Features
■ V DS = -20V, lD = -4.1A
RDS(ON) < 75mΩ @ VGS=-2.5V
RDS(ON) < 52mΩ @ VGS=-4.5V
■ High power and current handing capability
■ Lead free product is acquired
■ Surface mount package
Application
■ PWM applications
■ Load switch
■ Power management
Schematic Diagram
Package and order information
Device
Device Marking
Device Package
Reel Size
Tape width
Quantity
WTM2305
A5SHB
SOT-23
Ø180mm
8 mm
3000 pcs
Absolute Maximum Ratings (TA=25℃, RH=45%-75%, unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
-4.1
TC =25°C
Continuous Drain Current
TC =70°C
TA =25°C
ID
-3.2
-3
A
-2.3
TA =70°C
Drain Current-Pulsed (Note 1)
IDM
-15
A
Maximum Power Dissipation
PD
1.7
W
TJ & TSTG
−55 to +150
°C
Operating Junction and Storage Temperature Range
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WTM2305
P-Channel Enhancement Mode Power MOSFET
Thermal Characteristic
Parameter
Symbol
Value
Unit
Thermal Resistance and Junction-to-Ambient (Note 2)
RθJA
74
℃/W
Electrical Characteristics(TA = 25°C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
VGS=0V ID =-250μA
VGS=±12V,VDS=0V
-20
-
-
-1
±100
V
μA
nA
VDS=VGS,ID =-250μA
-0.45
-1.0
52
75
-
V
6
-0.7
39
58
-
mΩ
-
740
290
190
-
PF
PF
PF
-
12
35
30
10
7.8
1.2
1.6
-
nS
nS
nS
nS
nC
nC
nC
-
-
-1.2
1.6
V
A
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VDS=20V,VGS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
VGS=-4.5V, ID =-4.1A
VGS =--2.5V,ID =-3A
gFS
VDS=-5V,ID=-2A
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=-4V,VGS=0V,F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD =-4V,ID =-3.3A, RL
=1Ω
VGS =-4.5V,RGEN =1Ω
VDS=-4V,ID=-4.1A,VGS=-4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS =1.6A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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WTM2305
P-Channel Enhancement Mode Power MOSFET
Typical Electrical and Thermal Characteristics
Figure 2 - Switching Waveforms
PD Power (W)
ID-Drain Current(A)
Figure 1 - Switching Test Circuit
TJ -Junction Temperature (°C)
TJ -Junction Temperature (°C)
Figure 4 - Drain Current
ID-Drain Current(A)
Rdson On-Resistance(Ω)
Figure 3 - Power Dissipation
V1.0_Aug,2018
Vds Drain-Source Voltage (V)
ID-Drain Current(A)
Figure 5 - Output
Figure 6 -Drain-Source
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WTM2305
ID-Drain Current(A)
Normalized On-Resistance
P-Channel Enhancement Mode Power MOSFET
TJ -Junction Temperature (°C)
Figure 7 – Transfer Characteristics
Figure 8 – Drain-Source On-Resistance
C Capacitance(pF)
Rdson On-Resistance(Ω)
Vgs Gate-source Voltage(V)
Vgs Drain-source Voltage(V)
Figure 9 – Rdson vs Vgs
Figure 10 – Capacitance vs Vds
Vgs Gate-Source Voltage(V)
Is-Reverse Drain Current(A)
Vgs Gate-source Voltage(V)
V1.0_Aug,2018
Qg Gate Charge (nC)
Vsd Source-Drain Voltage(V)
Figure 11 –Gate Charge
Figure 12 –Source-Drain Diode Forward
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WTM2305
ID- Drain Current(A)
P-Channel Enhancement Mode Power MOSFET
Vds Drain-Source Voltage(V)
r(t), Normalized Effective
Transient Thermal Impedance
Figure 13 – Safe Operation Area
Square Wave Pulse Duration(sec)
Figure 14 – Normalized Maximum Transient Thermal Impedance
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WTM2305
P-Channel Enhancement Mode Power MOSFET
Soldering parameters
Pre Heat
Reflow Condition
Pb-Free assembly
-Temperature Min (Ts(min))
+150℃
-Temperature Max(Ts(max))
+200℃
-Time (Min to Max) (ts)
60-180 secs.
Average ramp up rate (Liquid us Temp (TL) to peak)
3℃/sec. Max
Ts(max) to TL - Ramp-up Rate
3℃/sec. Max
Reflow
-Temperature (TL) (Liquid us)
-Temperature(tL)
+217℃
60-150 secs.
Peak Temp (Tp)
+260(+0/-5)℃
Time within 5℃ of actual Peak Temp (tp)
30 secs. Max
Ramp-down Rate
6℃/sec. Max
Time 25℃ to Peak Temp (TP)
8 min. Max
Do not exceed
V1.0_Aug,2018
+260℃
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WTM2305
P-Channel Enhancement Mode Power MOSFET
Package Outline Dimensions (SOT-23)
Symbol
Dimensions in Millimeters
Min
Max
A
A1
A2
0.900
1.150
0.000
0.100
0.900
1.050
b
0.300
0.500
c
0.080
0.150
D
2.800
3.000
E
E1
1.200
2.250
1.400
2.550
e
e1
L
L1
θ
0.950 TYP
1.800
2.000
0.55 REF
0.300
0.500
0°
8°
Recommend PAD Layout
Notes:
1.
All dimensions are in millimeters.
2.
Tolerance ±0.10mm (4 mil) unless otherwise specified
3.
Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4.
Dimension L is measured in gauge plane.
5.
Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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