WTM2305

厂商：
WPMTEK(维攀微)
封装：
SOT-23
描述：
MOSFETs　P沟道　增强型　VDS=-20V,lD=-4.1A SOT-23

数据手册：

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数据手册
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WTM2305 数据手册

WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = -20V, lD = -4.1A RDS(ON) < 75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V ■ High power and current handing capability ■ Lead free product is acquired ■ Surface mount package Application ■ PWM applications ■ Load switch ■ Power management Schematic Diagram Package and order information Device Device Marking Device Package Reel Size Tape width Quantity WTM2305 A5SHB SOT-23 Ø180mm 8 mm 3000 pcs Absolute Maximum Ratings (TA=25℃, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V -4.1 TC =25°C Continuous Drain Current TC =70°C TA =25°C ID -3.2 -3 A -2.3 TA =70°C Drain Current-Pulsed (Note 1) IDM -15 A Maximum Power Dissipation PD 1.7 W TJ & TSTG −55 to +150 °C Operating Junction and Storage Temperature Range V1.0_Aug,2018 -1- www.wpmtek.com WTM2305 P-Channel Enhancement Mode Power MOSFET Thermal Characteristic Parameter Symbol Value Unit Thermal Resistance and Junction-to-Ambient (Note 2) RθJA 74 ℃/W Electrical Characteristics（TA = 25°C unless otherwise noted） Parameter Symbol Condition Min Typ Max Unit BVDSS IDSS IGSS VGS=0V ID =-250μA VGS=±12V,VDS=0V -20 - - -1 ±100 V μA nA VDS=VGS,ID =-250μA -0.45 -1.0 52 75 - V 6 -0.7 39 58 - mΩ - 740 290 190 - PF PF PF - 12 35 30 10 7.8 1.2 1.6 - nS nS nS nS nC nC nC - - -1.2 1.6 V A Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VDS=20V,VGS=0V On Characteristics (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance VGS=-4.5V, ID =-4.1A VGS =--2.5V,ID =-3A gFS VDS=-5V,ID=-2A S Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=-4V,VGS=0V,F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) tr td(off) tf Qg Qgs Qgd VDD =-4V,ID =-3.3A, RL =1Ω VGS =-4.5V,RGEN =1Ω VDS=-4V,ID=-4.1A,VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS =1.6A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production V1.0_Aug,2018 -2- www.wpmtek.com WTM2305 P-Channel Enhancement Mode Power MOSFET Typical Electrical and Thermal Characteristics Figure 2 - Switching Waveforms PD Power (W) ID-Drain Current(A) Figure 1 - Switching Test Circuit TJ -Junction Temperature (°C) TJ -Junction Temperature (°C) Figure 4 - Drain Current ID-Drain Current(A) Rdson On-Resistance(Ω) Figure 3 - Power Dissipation V1.0_Aug,2018 Vds Drain-Source Voltage (V) ID-Drain Current(A) Figure 5 - Output Figure 6 -Drain-Source -3- www.wpmtek.com WTM2305 ID-Drain Current(A) Normalized On-Resistance P-Channel Enhancement Mode Power MOSFET TJ -Junction Temperature (°C) Figure 7 – Transfer Characteristics Figure 8 – Drain-Source On-Resistance C Capacitance(pF) Rdson On-Resistance(Ω) Vgs Gate-source Voltage(V) Vgs Drain-source Voltage(V) Figure 9 – Rdson vs Vgs Figure 10 – Capacitance vs Vds Vgs Gate-Source Voltage(V) Is-Reverse Drain Current(A) Vgs Gate-source Voltage(V) V1.0_Aug,2018 Qg Gate Charge (nC) Vsd Source-Drain Voltage(V) Figure 11 –Gate Charge Figure 12 –Source-Drain Diode Forward -4- www.wpmtek.com WTM2305 ID- Drain Current(A) P-Channel Enhancement Mode Power MOSFET Vds Drain-Source Voltage(V) r(t), Normalized Effective Transient Thermal Impedance Figure 13 – Safe Operation Area Square Wave Pulse Duration(sec) Figure 14 – Normalized Maximum Transient Thermal Impedance V1.0_Aug,2018 -5- www.wpmtek.com WTM2305 P-Channel Enhancement Mode Power MOSFET Soldering parameters Pre Heat Reflow Condition Pb-Free assembly -Temperature Min (Ts(min)) +150℃ -Temperature Max(Ts(max)) +200℃ -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquid us Temp (TL) to peak) 3℃/sec. Max Ts(max) to TL - Ramp-up Rate 3℃/sec. Max Reflow -Temperature (TL) (Liquid us) -Temperature(tL) +217℃ 60-150 secs. Peak Temp (Tp) +260(+0/-5)℃ Time within 5℃ of actual Peak Temp (tp) 30 secs. Max Ramp-down Rate 6℃/sec. Max Time 25℃ to Peak Temp (TP) 8 min. Max Do not exceed V1.0_Aug,2018 +260℃ -6- www.wpmtek.com WTM2305 P-Channel Enhancement Mode Power MOSFET Package Outline Dimensions (SOT-23) Symbol Dimensions in Millimeters Min Max A A1 A2 0.900 1.150 0.000 0.100 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E E1 1.200 2.250 1.400 2.550 e e1 L L1 θ 0.950 TYP 1.800 2.000 0.55 REF 0.300 0.500 0° 8° Recommend PAD Layout Notes: 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. V1.0_Aug,2018 -7- www.wpmtek.com

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WTM2305

物料型号：WTM2305

器件简介：WTM2305是一款采用先进沟槽技术的P沟道增强型功率MOSFET，具有出色的RDS(ON)、低栅极电荷，并且能在低至2.5V的栅极电压下工作。适用于电池保护或其他开关应用。

引脚分配：文档中提供了SOT-23封装的顶视图和原理图，但未明确列出各引脚功能。

参数特性： - 漏源电压(Vds)：-20V - 栅源电压(Vgs)：±12V - 连续漏电流(Id)：在25°C时为-4.1A，70°C时为-3.2A - 最大功耗(Pd)：1.7W - 工作结温范围：-55°C至+150°C - 热阻(ReJA)：74°C/W

功能详解： - 高功率和电流处理能力 - 无铅产品 - 表面贴装封装

应用信息： - PWM应用 - 负载开关 - 电源管理

封装信息： - 器件封装为SOT-23 - 卷带尺寸、胶带宽度和数量信息提供

电气特性和热特性表格提供了详细的操作条件和参数范围，包括关态特性、导通特性、动态特性和开关特性。还包括了典型的电气和热特性图表，如开关测试电路图、开关波形图、功耗与结温关系图、漏电流与结温关系图等。

焊接参数部分提供了无铅组装的预热、平均升温速率、回流和峰值温度等信息。

最后，提供了SOT-23封装的尺寸图和推荐焊盘布局。