WTM3415

WTM3415 P-Channel Enhancement Mode Power MOSFET Description The WTM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A Schematic diagram RDS(ON) < 63mΩ @ VGS=-2.5V RDS(ON) < 55mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin Assignment Application ● PWM application ● Load switch SOT-23 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG top view Limit Unit -20 V ±8 V -4 A -30 A 1.4 W -55 To 150 ℃ 89.3 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit - V Off Characteristics Drain-Source Breakdown Voltage RevA_Aug,2018 BVDSS VGS=0V ID=-250μA -1- -20 www.wpmtek.com WTM3415 P-Channel Enhancement Mode Power MOSFET Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±8V,V - - ±10 μA VDS=VGS,ID=-250μA -0.4 -0.65 -1.0 V VGS=-4.5V, ID=-4A - 34. 55 mΩ VGS=-2.5V, ID=-4A - 44 63 mΩ VDS=-5V,ID=-4A 8 - - S - 950 - PF - 165 - PF - 120 - PF - 12 nS DS=0V On Characteristics (Note 3) Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-10V,RL=2. 5Ω - 10 nS td(off) VGS=-4.5V,RGEN=3Ω - 19 nS - 25 nS - 12 nC - 1.4 - nC - 3.6 - nC - - -1.2 V - - -2.2 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-4A, VGS=-4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production RevA_Aug,2018 -2- www.wpmtek.com WTM3415 P-Channel Enhancement Mode Power MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Safe Operation Area ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output CHARACTERISTICS RevA_Aug,2018 Figure 6 Drain-Source On-Resistance -3- www.wpmtek.com WTM3415 ID- Drain Current (A) Normalized On-Resistance P-Channel Enhancement Mode Power MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance Rdson (mΩ) C Capacitance (pF) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Vsd Source-Drain Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge RevA_Aug,2018 Figure 12 Source- Drain Diode Forward -4- www.wpmtek.com