D882

D882 TRANSISTOR (NPN) FEATURES Power dissipation SOT-89 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA ,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 mA ,IC=0 6 V Collector cut-off current ICBO VCB=40 V , IE=0 1 uA Collector cut-off current ICEO VCE=30 V , IB=0 10 uA Emitter cut-off current IEBO VEB=6V , 1 uA hFE(1) VCE= 2V, IC= 1A 60 hFE(2) VCE=2V, IC= 100mA 32 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V IC=0 400 DC current gain VCE=5 V, IC=0.1mA fT Transition frequency 50 f = 10MHz MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.slkormicro.com 1 D882 Typical Characteristics Static Characteristic 2.00 10mA 9mA 1.75 8mA IC 5mA 1.25 COLLECTOR CURRENT —— IC Ta=100℃ hFE 6mA DC CURRENT GAIN (A) 7mA 1.50 4mA 1.00 3mA 0.75 Ta=25℃ 100 2mA 0.50 0.25 COMMON EMITTER VCE= 2V IB=1mA 0.00 10 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE —— 7 8 1 VCE (V) 10 100 COLLECTOR CURRENT IC VBEsat —— 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) hFE 1000 COMMON EMITTER Ta=25 ℃ 100 Ta=100 ℃ 10 Ta=25℃ 1000 IC IC 1000 Ta=25℃ Ta=100 ℃ β=10 1 β=10 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 10 100 COLLECTOR CURREMT (mA) Cob/Cib VBE —— 1000 IC VCB/VEB 500 f=1MHz IE=0/IC=0 Cib (pF) (mA) Ta=25 ℃ C IC T= a 25 ℃ 100 CAPACITANCE 100 T= a 10 0℃ COLLECTOR CURRENT 3000 (mA) 1000 10 COMMON EMITTER VCE= 2V 0 300 600 900 1200 PC —— Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE www.slkormicro.com 100 Ta 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 600 Cob 10 0.1 1 COLLECTOR POWER DISSIPATION PC (mW) 3000 (mA) 125 150 (℃ ) 2 10 V (V) 20 D882 www.slkormicro.com 3