PJM7N02SA

PJM7N02SA Silicon N-Channel Power MOSFET Features    Fast switching Low gate charge and RDS(ON) VDS=20V ID=7A PD=1.2W RDS(ON)=26 mΩ(max) @10V Mark: M20 Application   Load/ power switching Small portable electronics 3D 1G 2S Absolute Maximum Ratings (Ta=25℃unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current 7 A IDM(1) Pulsed Drain Current 30 A RθJA Thermal Resistance from Junction toAmbient 104 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) 260 ℃ Notes:1.Repetitive rating; pulse width limited by maximum junction temperature www.pingjingsemi.com Revision：1.0 May-2018 1/5 PJM7N02SA Silicon N-Channel Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Units Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 Drain to Source Leakage Current IDSS VDS =16V, VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±12V,VDS = 0V ±100 nA 1.0 V VGS =10V, ID =7A 26 mΩ VGS =4.5V, ID =6.6A 27 mΩ VGS =3.8V, ID =6A 30 mΩ VGS =2.5V, ID =5.5A 33 mΩ VGS =1.8V, ID =5A 45 mΩ Static Characteristics VDS =VGS, ID =250µA VGS(th) Gate threshold voltage(1) Drain-source on-resistance(1) Forward tranconductance (1) Dynamic characteristics RDS(on) gFS VDS =5V, ID =7A V 0.4 9 S (2) Input Capacitance Ciss 1150 Output Capacitance Coss Reverse Transfer Capacitance Crss 145 Total gate charge Qg 15 Gate-source charge Qgs Gate-drain charge Qgd 3.2 td(on) 6 VDS =10V,VGS =0V,f=1MHz VDD =10V,VGS =4.5V,ID =7A 185 pF 0.8 nC Switching Characteristics(2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=5V,VDD=10V, 13 td(off) RL =1.35Ω,RGEN =3Ω, 52 ns 16 tf Source-Drain Diode characteristics Diode Forward voltage(1) VSD VGS =0V, IS=1A 1.0 V Notes : 1. Pulse test : pulse width≤300μs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.pingjingsemi.com Revision：1.0 May-2018 2/5 PJM7N02SA Silicon N-Channel Power MOSFET Typical Characteristic Curves Output Characteristics 20 Ta=25℃ VGS=2V,2.5V,3V,4V,5V Pulsed 18 Pulsed (A) 16 14 Ta=25℃ Ta=100℃ 14 12 DRAIN CURRENT ID ID (A) VDS=3V 18 16 DRAIN CURRENT Transfer Characteristics 20 10 8 VGS=1.5V 6 12 10 8 6 4 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 0 0.0 5.0 0.5 (V) 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE 2.5 VGS RDS(ON) —— VGS RDS(ON) —— ID 300 40 Pulsed Ta=25℃ Pulsed 250 (m) VGS=1.8V RDS(ON) 30 25 VGS=2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 35 20 15 VGS=3.8V,4.5V,10V ID=7A 200 150 100 Ta=100℃ 50 10 5 3.0 (V) Ta=25℃ 1 2 3 4 DRAIN CURRENT 5 ID 6 0 7 0 (A) 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE 7 VGS 8 9 10 (V) Threshold Voltage IS —— VSD 7 1.2 Pulsed TH 1 Ta=100℃ THRESHOLD VOLTAGE E SOURCE CURRENT IS (A) (V) 1.0 Ta=25℃ 0.1 0.8 ID=250uA 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.pingjingsemi.com Revision：1.0 May-2018 1.2 VSD (V) 1.4 1.6 0.0 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) 3/5 PJM7N02SA Silicon N-Channel Power MOSFET Package Outline SOT-23 0.8 Max. 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 0.500 8o 2.2 Typ. 1.025 0.8 1.0 Min. 0.900 A 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended Soldering Pad Ordering Information Device Package Shipping PJM7N02SA SOT-23 3000PCS/Reel&Tape www.pingjingsemi.com Revision：1.0 May-2018 4/5 PJM7N02SA Silicon N-Channel Power MOSFET Packaging Specifications 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210 2. Tape and reel data (7inch units:mm) D A 3000 2900 2000 T2 T1 1900 1000 600 B C E PS F A B C D E F T1 T2 Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 9.6+2/-0.3 Ø 54.5±0.2 12.3±0.3 1.0±0.2 1.2±0.2 www.pingjingsemi.com Revision：1.0 May-2018 5/5