PJM7002KNSA

PJM7002KNSA N-Enhancement Field Effect Transistor SOT-23 Features  Fast switching  Low gate charge and RDS(ON)  Low reverse transfer capacitances  ESD protected(HBM) up to 2KV 1. Gate 2.Source 3.Drain Marking: K72 Applications D  PWM applications  Load switch  Power management G S Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 0.3 A Power Dissipation PD 0.35 W Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Symbol Typ. Units RθJA 357 °C/W Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient www.pingjingsemi.com Revision：2.2 Feb-2019 1/8 PJM7002KNSA N-Enhancement Field Effect Transistor Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Conditions Rating Units Min. Typ. Max. VGS= 0V, ID=250µA 60 -- -- V Static Parameters V DSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current VDS=60,VGS=0V -- -- 1 µA IGSS Gate to Source Forward Leakage VDS = 0V, VGS = ±20V -- -- ±10 µA R DS(ON) Drain-to-Source On-Resistance Note1 V GS =10V,I D =0.5A -- 1.9 3 Ω V GS =4.5V,I D =0.3A -- 2.2 4 Ω V GS(TH) Gate Threshold Voltage Note1 V DS =V GS , I D =250µA 1 1.7 2.5 V VDS =10V, I D =0.2A 0.1 5 -- S -- 20 -- -- 12 -- -- 4.4 -- -- 10 -- -- 45 -- -- 15 -- -- 10 -- -- 1.7 -- -- 0.9 -- -- 1.3 -- gFS Forward Transconductance Note1 Dynamic Characteristics C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance V GS =0V,V DS =15V f=1.0MHz pF Switching Characteristics t d(ON) tr t d(OFF) tf Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Total Gate Charge Q gs Gate to Source Charge Q gd Gate to Drain (“ Miller ”)Charge ID = 0.2A,VDD = 15V VGS=10V, RG = 3Ω ID = 0.3A,VDD=15V, VGS=10V ns nC Source-Drain Diode Characteristics ISD Continuous Source Current (Body Diode) -- -- 0.3 A I SM Maximum Pulsed Current (Body Diode) -- -- 0.9 A V SD Diode Forward Voltage -- -- 1.5 V IS=0.3A,VGS =0V Note: 1. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.2 Feb-2019 2/8 PJM7002KNSA N-Enhancement Field Effect Transistor Typical Characteristic Curves www.pingjingsemi.com Revision：2.2 Feb-2019 3/8 PJM7002KNSA N-Enhancement Field Effect Transistor www.pingjingsemi.com Revision：2.2 Feb-2019 4/8 PJM7002KNSA N-Enhancement Field Effect Transistor www.pingjingsemi.com Revision：2.2 Feb-2019 5/8 PJM7002KNSA N-Enhancement Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 2.2 Typ. 0.900 A 0.8 1.0 Min. 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) 0.500 8o Recommended soldering pad Ordering information Device Package Shipping PJM7002KNSA SOT-23 3000/Reel&Tape(7inch) www.pingjingsemi.com Revision：2.2 Feb-2019 6/8 PJM7002KNSA N-Enhancement Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.2 Feb-2019 7/8 PJM7002KNSA N-Enhancement Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：2.2 Feb-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 8/8