PJM65H0A5NSQ

PJM65H0A5NSQ Silicon N-Channel Power MOSFET SOT-89 Features  Fast Switching  Low Threshold Voltage  Low Gate Charge  Low Reverse transfer capacitances 1. Gate 2.Drain Marking: KD 3.Source Schematic diagram 2Drain Applications  Power switch circuit of adaptor and charger 1Gate 3 Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ± 20 V Continuous Drain Current ID 0.5 A Pulsed Drain Current Note1 IDM 3 A Single Pulse Avalanche Energy Note2 EAS 15 mJ Total Power Dissipation PD 1 W Operating Junction Temperature TJ 150 ℃ TSTG - 55 to + 150 ℃ Symbol Value Unit RθJA 62.5 ℃/W Storage Temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient Note3 www.pingjingsemi.com Revision：1.0 Jun-2020 1/6 PJM65H0A5NSQ Silicon N-Channel Power MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA Zero Gate Voltage Drain Current IDSS VDS =650V,VGS = 0V 1 μA Gate-Body Leakage Current IGSS VGS =±30V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =250µA 1.5 V Gate Threshold Voltage Note4 Drain-Source On-Resistance Forward Tranconductance Note4 Note4 RDS(on) gFS 650 V 0.5 VGS =10V, ID =0.4A 30 VGS =4.5V, ID =0.3A 30 VDS =15V, ID =0.5A 0.5 Ω S Dynamic Characteristics Input Capacitance Ciss 96 Output Capacitance Coss Reverse Transfer Capacitance Crss 2.8 Total Gate Charge Qg 4.8 Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 Turn-On Delay Time td(on) 6 Turn-On Rise Time tr Turn-Off Delay Time td(off) VDS =25V,VGS =0V,f =1MHz 10 pF Switching CharacteristicsS Turn-Off Fall Time VDS =350V,VGS =10V,ID =0.5A VGS=10V,VDD=350V,ID=0.5A, RGEN=4.7Ω tf 0.6 nC 4.8 ns 16.8 12.4 Source-Drain Diode characteristics Body Diode Voltage VSD IS=0.5A,VGS=0V 0.8 1.2 V Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. L=10mH, ID=1.5A, Start TJ=25℃ 3. Surface mounted on FR4 board , t≤10s. 4. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%. www.pingjingsemi.com Revision：1.0 Jan-2019 2/6 PJM65H0A5NSQ Silicon N-Channel Power MOSFET ( Typical Characteristics Curves www.pingjingsemi.com Revision：1.0 Jan-2019 3/6 PJM65H0A5NSQ Silicon N-Channel Power MOSFET Package Outline SOT-89 Ordering Information Device PJM65H0A5NSQ www.pingjingsemi.com Revision：1.0 Jan-2019 Package SOT-89 Shipping 1000/Reel&Tape(7inch) 4/6 PJM65H0A5NSQ Silicon N-Channel Power MOSFET Conditions of Soldering and Storage Recommended condition of reflow soldering  Figure Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Jan-2019 5/6 PJM65H0A5NSQ Silicon N-Channel Power MOSFET Package Specifications  unit: mm The method of packaging Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 10,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 40,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data 179±1 +1 12.7-0.2 1.0±0.2 60.5±0.2 13.5±0.2 2.7±0.2 10.0±0.2 15.3±0.3 Reel (7'') Tape (12mm) www.pingjingsemi.com Revision：1.0 Jan-2019 6/6