PJM4602DNSG-S

PJM4602DNSG-S Dual N-Channel MOSFET Features SOT-23-6 ⚫ Fast Switching ⚫ Low Gate Charge and RDS(on) ⚫ High power and current handing capability 4 5 Applications ⚫ Battery protection ⚫ Load switch ⚫ Power management 3 6 2 1 Marking Code: DS02 Schematic Diagram 6.Drain1 4.Drain2 1.Gate1 3.Gate2 5.Source1 2.Source2 Absolute Maximum Ratings Ratings at TA = 25℃ unless otherwise specified. Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 2 A Drain Current-Plused Note1 IDM 10 A Maximum Power Dissipation PD 1 W TJ,TSTG -55 To 150 ℃ Parameter Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 Apr-2020 Symbol Max. Unit RθJA 125 ℃/W 1/5 PJM4602DNSG-S Dual N-Channel MOSFET Electrical Characteristics TA =25℃ unless otherwise specified. Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.4 0.8 1.2 V Drain-Source On-State Resistance Note3 RDS(ON) - 60 80 mΩ VGS=4.5V, ID=2A - 48 60 mΩ VDS=5V,ID=2A - 5 - S - 260 - pF - 48 - pF Static Characteristics Forward Transconductance Note3 VGS=2.5V, ID=1A gFS Dynamic Characteristics Input Capacitance Clss VDS=10V,VGS=0V, Output Capacitance Coss Reverse Transfer Capacitance Crss - 27 - pF Turn-on Delay Time td(on) - 2.5 - nS Turn-on Rise Time tr - 3.2 - nS - 21 - nS f=1.0MHz Switching Characteristics Turn-Off Delay Time td(off) VDD=10V, RL=3.3Ω VGS=4.5V,RGEN=6Ω Turn-Off Fall Time tf - 3 - nS Total Gate Charge Qg - 2.9 5 nC Gate-Source Charge Qgs - 0.4 - nC Gate-Drain Charge Qgd - 0.6 - nC - - 1.2 V - - 2 A VDS=10V,ID=2A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage Note 3 VSD Diode Forward Current Note 2 IS VGS=0V,IS=2A Notes: 1. Repetitive rating: pulsed width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse width ≤ 300μs, duty cycle ≤ 2% www.pingjingsemi.com Revision：1.0 Apr-2020 2/5 PJM4602DNSG-S Dual N-Channel MOSFET ID- Drain Current (A) Rdson On-Resistance(mΩ) Electrical Characteristics Curves ID- Drain Current (A) VDS Drain-Source Voltage (V) Figure 2 Drain-Source On-Resistance ID- Drain Current (A) Normalized On-Resistance Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 3 Transfer Characteristics Figure 4 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) ID=2A VGS Gate-Source Voltage (V) Figure 5 RDS(on) vs VGS www.pingjingsemi.com Revision：1.0 Apr-2020 VDS Drain-Source Voltage (V) Figure 6 Capacitance vs VDS 3/5 VDS=10V ID=2A Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) PJM4602DNSG-S Dual N-Channel MOSFET Qg Gate Charge (nC) VSD Source-Drain Voltage (V) Figure 7 Gate Charge ID- Drain Current (A) Figure 8 Source- Drain Diode Forward VDS Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 9 Safe Operation Area Square Wave Pluse Duration(sec) Figure 10 Normalized Maximum Transient Thermal Impedance www.pingjingsemi.com Revision：1.0 Apr-2020 4/5 PJM4602DNSG-S Dual N-Channel MOSFET Package Outline SOT-23-6 Dimensions in mm 2.92 ±0.05 0.15 ±0.02 10 1.6 2.8 ±0.1 ±0.05 1.9 12 R0.15MAX 0.95 0.35 R0.15MAX 0.06 12 ± 0.05 0.65 ± 0.03 1.1 ±0.05 10 Ordering Information Device PJM4602DNSG-S www.pingjingsemi.com Revision：1.0 Apr-2020 Package SOT-23-6 Shipping 3000/Reel&Tape(7inch) 5/5