PJM3420NSA

PJM3420NSA N- Enhancement Mode Field Effect Transistor SOT-23 Feature ⚫ TrenchFET Power MOSFET ⚫ Excellent RDS(on) and Low Gate Charge 1.Gate 2.Source 3.Drain Marking：R20 Applications ⚫ Schematic diagram Load Switch for Portable Devices Drain 3 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Drain-Source Voltage Symbol VDS Maximum 20 Units V VGS ±12 V Continuous Drain Current ID 6 Pulsed Drain Current IDM 25 Power Dissipation PD 0.9 W TJ, TSTG 150, -55 to 150 °C Symbol Typ. Units RθJA 139 °C/W Gate-Source Voltage Junction and Storage Temperature Range A Thermal Characteristics Parameter Maximum Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Sep-2018 1/6 PJM3420NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics (Ta = 25℃) Parameter Symbol Conditions Min. Typ. Max. Units Static Parameters Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V -- -- 1 µA Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V -- -- ±100 nA VGS(th) VDS=VGS, ID=250µA 0.5 -- 1 V VGS=10V, ID=6A -- -- 29 mΩ VGS=4.5V, ID=5A -- -- 35 mΩ VGS=2.5V, ID=4A -- -- 48 mΩ VGS=1.8V, ID=2A -- -- 91 mΩ VSD IS=1A, VGS=0V -- -- 1 V Forward Transconductance gFS VDS=5V, ID=3.8A 4 -- -- S Input Capacitance Ciss -- 630 -- pF Output Capacitance Coss -- 164 -- pF Reverse Transfer Capacitance Crss -- 137 -- pF -- 12.5 -- nC -- 6 -- nC -- 1 -- nC Gate Threshold Voltage Static Drain-Source On-Resistance Body Diode Forward Voltage RDS(ON) Dynamic Parameters VGS=0V, VDS=10V, f=1MHz Switching Parameters Total Gate Charge (10V) Total Gate Charge (4.5V) Qg VGS=10V, VDS=10V, ID=6A Gate Source Charge Qgs Gate Drain Charge Qgd -- 2 -- nC Turn-On DelayTime tD(on) -- 5.5 -- ns Turn-On Rise Time tr -- 14 -- ns Turn-Off DelayTime tD(off) -- 29 -- ns -- 10.2 -- ns Turn-Off Fall Time www.pingjingsemi.com Revision：1.0 Sep-2018 tf VGS=5V, VDS=10V, RGEN =6 Ω, RL=1.7 Ω 2/6 PJM3420NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics Curves Transfer Characteristics Output Characteristics 20 Ta=25℃ Pulsed VGS=4.5V 4V 3.5V 3V 2.5V VDS=5V Ta=25℃ Pulsed 2V ID DRAIN CURRENT DRAIN CURRENT ID (A) 15 (A) 15 20 10 VGS=1.5V 5 10 5 0 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 4 VDS 5 0 3 ID VGS 4 (V) RDS(ON) —— VGS 80 Ta=25℃ Pulsed Ta=25℃ Pulsed VGS=1.8V 60 40 ON-RESISTANCE RDS(ON) (mΩ) 60 RDS(ON) (mΩ) 2 GATE TO SOURCE VOLTAGE 80 ON-RESISTANCE 1 (V) VGS=2.5V VGS=4.5V 20 VGS=10V 0 40 ID=6A 20 0 0 2 4 6 DRAIN CURRENT ID 8 10 0 2 (A) 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) IS —— VSD Threshold Voltage 1 0.9 IS (A) 0.8 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Ta=25℃ Pulsed ID=250uA 0.7 0.6 25 50 75 JUNCTION TEMPERATURE PERAT www.pingjingsemi.com Revision：1.0 Sep-2018 100 J (℃ ) 125 0.1 0.01 1E-3 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 1.0 VSD (V) 3/6 PJM3420NSA N- Enhancement Mode Field Effect Transistor Package Outline SOT-23 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 2.2 Typ. 0.900 0.8 1.0 Min. A 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 L 0.300 0.500 θ 0o 8o Recommended soldering pad Ordering Information Device Package Shipping PJM3420NSA SOT-23 3,000/Tape & Reel (7 inches) www.pingjingsemi.com Revision：1.0 Sep-2018 4/6 PJM3420NSA N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Sep-2018 5/6 PJM3420NSA N- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 534 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.0 Sep-2018 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6