PJM3404NSA

PJM3404NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features    VDS = 30V,ID = 5.8A RDS(ON) < 28mΩ @ VGS=10V RDS(ON) < 40mΩ @ VGS=4.5V Low Gate Charge and RDS(on) High power and current handing capability 1. Gate 2.Source 3.Drain Marking: R4 Applications  Schematic diagram Load switch and in PWM applications 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed Note1 IDM 20 A Maximum Power Dissipation PD 0.9 W TJ,TSTG -55 To 150 ℃ RθJA 139 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 Jun-2019 1/7 PJM3404NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 1.2 1.6 2.4 V Drain-Source On-State Resistance Note3 RDS(ON) VGS=10V, ID=5A - - 28 mΩ VGS=4.5V, ID=4A - - 40 mΩ VDS=5V,ID=5A - 15 - S - 255 - pF - 45 - pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 35 - pF Turn-on Delay Time td(on) - 4.5 - nS Turn-on Rise Time tr - 2.5 - nS - 14.5 - nS - 3.5 - nS - 5.2 - nC - 0.85 - nC - 1.3 - nC - - 1.2 V - - 5.8 A VDS=15V,VGS=0V, f=1.0MHz Switching Characteristics Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=15V, RL=3Ω VGS=10V,RGEN=3Ω VDS=15V,ID=5A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage Note 3 VSD Diode Forward Current Note 2 IS VGS=0V,IS=5A Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 Jun-2019 2/7 PJM3404NSA N- Enhancement Mode Field Effect Transistor ID- Drain Current (A) ID- Drain Current (A) Typical Characteristics Curves Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Transfer Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) Output Characteristics TJ-Junction Temperature(℃) Drain-Source On-Resistance Drain-Source On-Resistance Rdson On-Resistance(mΩ) Is- Reverse Drain Current (A) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Rdson vs Vgs www.pingjingsemi.com Revision：1.0 Jun-2019 Vds Drain-Source Voltage (V) Source- Drain Diode Forward 3/7 ID- Drain Current (A) Vgs Gate-Source Voltage (V) PJM3404NSA N- Enhancement Mode Field Effect Transistor Qg Gate Charge (nC) Safe Operation Area C Capacitance (pF) Gate Charge Vds Drain-Source Voltage (V) Vds Drain-Source Voltage (V) Capacitance vs Vds www.pingjingsemi.com Revision：1.0 Jun-2019 4/7 PJM3404NSA N- Enhancement Mode Field Effect Transistor Package Outline SOT-23 0.8 Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 0.500 8o 2.2 Typ. 0.8 1.0 Min. 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended Soldering Pad Ordering Information Device PJM3404NSA www.pingjingsemi.com Revision：1.0 Jun-2019 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 5/7 PJM3404NSA N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  (°C) Peak Temperature 245 to 260°C, 10s max. Temperature 250 Reflow Heating Rate 1 to 5°C / s 200 150 100 50 0 Pre Heating Rate Preliminary Heating 1 to 5°C / s 130 to 170°C, 50 to 120s Soldering 230°C, 20 to 30s Cooling 60s min. Figure 2 times max. Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Jun-2019 6/7 PJM3404NSA N- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.0 Jun-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 7/7