PJM3400NSQ

PJM3400NSQ N- Enhancement Mode Field Effect Transistor SOT-89 Features   VDS = 30V,ID = 6A RDS(ON) < 45mΩ @ VGS=2.5V RDS(ON) < 31mΩ @ VGS=4.5V RDS(ON) < 27mΩ @ VGS=10V High power and current handing capability 1. Gate 2.Drain 3.Source Marking: U0 Applications  Load switch and in PWM applications  Power management Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 6 A Drain Current-Pulsed Note1 IDM 30 A Maximum Power Dissipation PD 1.4 W TJ,TSTG 150,-55 To 150 ℃ RθJA 89 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 May-2019 1/5 PJM3400NSQ N- Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA VGS(th) VDS=VGS,ID=250μA 0.7 0.9 1.4 V VGS=2.5V, ID=4A - - 45 mΩ VGS=4.5V, ID=5A - - 31 mΩ VGS=10V, ID=5.8A - - 27 mΩ VDS=5V,ID=5A 10 - - S - 825 - pF - 100 - pF - 78 - pF - 3.3 - nS - 4.8 - nS - 26 - nS - 4 - nS - 10 - nC - 1.6 - nC - 3.1 - nC - - 1.2 V - - 5.8 A Static Characteristics Gate Threshold Voltage Note3 Drain-Source On-State Resistance Note3 Forward Transconductance Note3 RDS(ON) gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, f=1.0MHz Switching Characteristics Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=15V, RL=2.7Ω VGS=10V,RGEN=3Ω VDS=15V,ID=5.8A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage Note3 Diode Forward Current Note2 VSD VGS=0V,IS=5.8A IS Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 May-2019 2/5 PJM3400NSQ N- Enhancement Mode Field Effect Transistor PD Power(W) ID- Drain Current (A） Typical Characteristics Curves TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Drain-Source On-Resistance ID- Drain Current (A) Normalized On-Resistance Output Characteristics Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Transfer Characteristics Drain-Source On-Resistance www.pingjingsemi.com Revision：1.0 May-2019 3/5 C Capacitance (pF) Rdson On-Resistance(Ω) PJM3400NSQ N- Enhancement Mode Field Effect Transistor Vds Drain-Source Voltage (V) Rdson vs Vgs Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Gate Charge Source- Drain Diode Forward www.pingjingsemi.com Revision：1.0 May-2019 4/5 PJM3400NSQ N- Enhancement Mode Field Effect Transistor Package Outline SOT-89 Ordering Information Device PJM3400NSQ www.pingjingsemi.com Revision：1.0 May-2019 Package SOT-89 Shipping 1000/Reel&Tape(7inch) 5/5