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PJM2324NSA

PJM2324NSA

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT-23

  • 描述:

    DC/DC ConverterLoad Switching

  • 数据手册
  • 价格&库存
PJM2324NSA 数据手册
PJM2324NSA N- Enhancement Mode Field Effect Transistor Features SOT-23  Trench FET Power MOSFET  RDS(ON) < 234mΩ (VGS = 10V) RDS(ON) < 278mΩ (VGS = 4.5V) 1. Gate 2.Source 3.Drain Marking: S24 Schematic diagram Applications  DC/DC Converter  Load Switching 3 Drain 1 Gate 2 Source Absolute Maximum Ratings (TA=25℃, unless otherwise noted) Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 V Continuous Drain Current ID 2 A Pulsed Drain Current Note 1 IDM 8 A Total Power Dissipation PD 0.35 W Operating Junction Temperature TJ 150 ℃ TSTG - 55 to + 150 ℃ Symbol Value Unit RθJA 357 ℃/W Parameter Storage Temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient Note2 www.pingjingsemi.com Revision:1.0 Sep-2018 1/6 PJM2324NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)DSS VGS = 0V, ID = 250μA 100 - - V Gate Leakage Current IGSS VDS = 0V, VGS = ±20V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS =100V, VGS = 0V - - 1 μA Gate Threshold Voltage Note3 VGS(th) VDS = VGS, ID = 250μA 1.2 - 2.8 V Drain-Source On-Resistance Note3 RDS(ON) VGS = 10V, ID =1.5A - - 234 VGS =4.5V, ID = 0.5A - - 278 VDS = 20V, ID = 1.5A - 2 - - 190 - - 22 - Static Characteristics Drain-Source Breakdown Voltage Forward transconductance Note3 gfs mΩ S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 13 - Turn-On Delay Time td(on) - - 45 Turn-On Rise Time tr - - 39 Turn-Off Delay Time td(off) - - 26 VDS = 50V, VGS = 0V, f = 1MHz pF Switching Characteristics VDD=50V, VGEN=4.5V, RL=39Ω, RG=1Ω, ID=1.3A Turn-Off Fall Time tf - - 20 Total Gate Charge Qg - - 5.8 Gate-Source Charge Qgs - 0.75 - Gate-Drain Charge Qgd - 1.4 - - - 1.2 VDS=50V,VGS =4.5V,ID=1.6A ns nC Source-Drain Diode Characteristics Forward Diode Voltage Note2 VSD VGS = 0V, IS = 1.3A V Notes:1. Repetitive rating: Pluse width limited by junction temperature. 2. Surface mounted on FR4 board,t ≦ 10 sec. 3. Pulse test: pulse width ≦ 300us, duty cycle≦ 0.5%. www.pingjingsemi.com Revision:1.0 Sep-2018 2/6 PJM2324NSA N- Enhancement Mode Field Effect Transistor Typical Characteristics Curves Output Characteristics 10 Transfer Characteristics 5.0 Pulsed 9 (A) ID 7 VGS=3.8V 6 5 VGS=3.5V 4 3 2 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 280 4 2.5 Ta=25℃ Ta=100℃ 2.0 1.5 VDS 0.0 5 0 1 3 (V) 4 GATE TO SOURCE VOLTAGE ID RDS(ON) 900 —— VGS (V) VGS 800 VGS=4.5V 220 (mΩ) 240 700 RDS(ON) 260 600 ON-RESISTANCE (mΩ) RDS(ON) 3.0 0.5 Ta=25℃ Pulsed ON-RESISTANCE 3.5 1.0 VGS=3V 1 0 Pulsed 4.0 DRAIN CURRENT DRAIN CURRENT ID (A) 8 VDS=3V 4.5 VGS=8V,10V,12V 200 VGS=10V 500 Ta=100℃ Pulsed 400 300 Ta=25℃ Pulsed 200 VGS=6V 180 ID=0.8A 100 160 0 1 0 2 DRAIN CURRENT ID 2 4 6 8 GATE TO SOURCE VOLTAGE (A) IS —— VSD 6 0 VGS 10 (V) Threshold Voltage 2.1 2.0 VTH Ta=100℃ Pulsed THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 Ta=25℃ Pulsed 0.1 0.01 1.9 1.8 ID=250uA 1.7 1.6 1.5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.pingjingsemi.com Revision:1.0 Sep-2018 1.2 VSD (mV) 1.4 1.6 1.4 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) 3/6 PJM2324NSA N- Enhancement Mode Field Effect Transistor Package Outline SOT-23 0.8 Max. A 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.8 1.9 SOT-23 0.550REF L1 2.2 Typ. 0.900 1.0 Dimensions in millimeter Min. 1.0 Symbol L 0.300 0.500 θ 0o 8o Recommended soldering pad Ordering Information Device PJM2324NSA www.pingjingsemi.com Revision:1.0 Sep-2018 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM2324NSA N-Channel MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision:1.0 Sep-2018 5/6 PJM2324NSA N-Channel MOSFET Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 534 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision:1.0 Sep-2018 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6
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