PJM2324NSA
N- Enhancement Mode Field Effect Transistor
Features
SOT-23
Trench FET Power MOSFET
RDS(ON) < 234mΩ (VGS = 10V)
RDS(ON) < 278mΩ (VGS = 4.5V)
1. Gate
2.Source 3.Drain
Marking: S24
Schematic diagram
Applications
DC/DC Converter
Load Switching
3 Drain
1
Gate
2 Source
Absolute Maximum Ratings
(TA=25℃, unless otherwise noted)
Symbol
Value
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current
ID
2
A
Pulsed Drain Current Note 1
IDM
8
A
Total Power Dissipation
PD
0.35
W
Operating Junction Temperature
TJ
150
℃
TSTG
- 55 to + 150
℃
Symbol
Value
Unit
RθJA
357
℃/W
Parameter
Storage Temperature
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient Note2
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Revision:1.0 Sep-2018
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PJM2324NSA
N- Enhancement Mode Field Effect Transistor
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)DSS
VGS = 0V, ID = 250μA
100
-
-
V
Gate Leakage Current
IGSS
VDS = 0V, VGS = ±20V
-
-
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS =100V, VGS = 0V
-
-
1
μA
Gate Threshold Voltage Note3
VGS(th)
VDS = VGS, ID = 250μA
1.2
-
2.8
V
Drain-Source On-Resistance Note3
RDS(ON)
VGS = 10V, ID =1.5A
-
-
234
VGS =4.5V, ID = 0.5A
-
-
278
VDS = 20V, ID = 1.5A
-
2
-
-
190
-
-
22
-
Static Characteristics
Drain-Source Breakdown Voltage
Forward transconductance Note3
gfs
mΩ
S
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
13
-
Turn-On Delay Time
td(on)
-
-
45
Turn-On Rise Time
tr
-
-
39
Turn-Off Delay Time
td(off)
-
-
26
VDS = 50V, VGS = 0V, f = 1MHz
pF
Switching Characteristics
VDD=50V, VGEN=4.5V,
RL=39Ω, RG=1Ω, ID=1.3A
Turn-Off Fall Time
tf
-
-
20
Total Gate Charge
Qg
-
-
5.8
Gate-Source Charge
Qgs
-
0.75
-
Gate-Drain Charge
Qgd
-
1.4
-
-
-
1.2
VDS=50V,VGS =4.5V,ID=1.6A
ns
nC
Source-Drain Diode Characteristics
Forward Diode Voltage Note2
VSD
VGS = 0V, IS = 1.3A
V
Notes:1. Repetitive rating: Pluse width limited by junction temperature.
2. Surface mounted on FR4 board,t ≦ 10 sec.
3. Pulse test: pulse width ≦ 300us, duty cycle≦ 0.5%.
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PJM2324NSA
N- Enhancement Mode Field Effect Transistor
Typical Characteristics Curves
Output Characteristics
10
Transfer Characteristics
5.0
Pulsed
9
(A)
ID
7
VGS=3.8V
6
5
VGS=3.5V
4
3
2
0
1
2
3
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
280
4
2.5
Ta=25℃
Ta=100℃
2.0
1.5
VDS
0.0
5
0
1
3
(V)
4
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
900
——
VGS
(V)
VGS
800
VGS=4.5V
220
(mΩ)
240
700
RDS(ON)
260
600
ON-RESISTANCE
(mΩ)
RDS(ON)
3.0
0.5
Ta=25℃
Pulsed
ON-RESISTANCE
3.5
1.0
VGS=3V
1
0
Pulsed
4.0
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
8
VDS=3V
4.5
VGS=8V,10V,12V
200
VGS=10V
500
Ta=100℃
Pulsed
400
300
Ta=25℃
Pulsed
200
VGS=6V
180
ID=0.8A
100
160
0
1
0
2
DRAIN CURRENT
ID
2
4
6
8
GATE TO SOURCE VOLTAGE
(A)
IS —— VSD
6
0
VGS
10
(V)
Threshold Voltage
2.1
2.0
VTH
Ta=100℃
Pulsed
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
1
Ta=25℃
Pulsed
0.1
0.01
1.9
1.8
ID=250uA
1.7
1.6
1.5
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
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Revision:1.0 Sep-2018
1.2
VSD (mV)
1.4
1.6
1.4
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
(℃ )
3/6
PJM2324NSA
N- Enhancement Mode Field Effect Transistor
Package Outline
SOT-23
0.8
Max.
A
1.025
1.150
A1
0.000
0.050
0.100
b
c
D
0.300
0.080
2.800
0.400
0.115
2.900
0.500
0.150
3.000
E
1.200
1.300
1.400
HE
2.250
2.400
2.550
e
1.800
1.900
2.000
0.8
1.9
SOT-23
0.550REF
L1
2.2
Typ.
0.900
1.0
Dimensions in millimeter
Min.
1.0
Symbol
L
0.300
0.500
θ
0o
8o
Recommended soldering pad
Ordering Information
Device
PJM2324NSA
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Revision:1.0 Sep-2018
Package
SOT-23
Shipping
3000/Reel&Tape(7inch)
4/6
PJM2324NSA
N-Channel MOSFET
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Revision:1.0 Sep-2018
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PJM2324NSA
N-Channel MOSFET
Package Specifications
The method of packaging
Cover Tape
SOT-23 (TO-236)
3,000 pcs per reel
1
3
2
Carrier Tape
30,000 pcs per box
10 reels per box
220
195
0
435
21
534
120,000 pcs per carton
4 boxes per carton
210
Embossed tape and reel data
D
A
T2
T1
4.0
4.0
B
8.0
C
E
1Pin
G
N
Tape (8mm)
F
Reel (7'')
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Revision:1.0 Sep-2018
Symbol
A
B
C
E
F
D
T1
T2
N
G
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
3.15±0.1
1.25±0.1
6/6
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