PJM2321PSA

PJM2321PSA P-Channel Power MOSFET SOT-23 Features   VDS= -20V ID= -2.9A RDS(ON)= 57mΩ(max) @-4.5V 1. Gate 2.Source 3.Drain Marking: S21 Schematic Diagram Application  Load switch and in PWM applicatopns  Power management Drain 3 1 Gate 2 Source Absolute Maximum Ratings (Ta=25℃unless otherwise specified) Symbol Rating Units Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS ±12 V Continuous Drain Current ID -2.9 A Pulsed Drain Current IDM -12 A Continuous Source-Drain Diode Current IS -0.59 A Power Dissipation PD 0.35 W Operating Junction Temperature TJ 150 ℃ TSTG – 55 to150 ℃ Symbol Typ Unit RθJA 357 ℃/W Parameter Note 1 Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient www.pingjingsemi.com Revision：1.0 Jun-2018 Note2 1/5 PJM2321PSA P-Channel Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID=-250µA -20 Drain to Source Leakage Current IDSS VDS =-16V,VGS = 0V Gate-body leakage current IGSS Gate threshold voltageNote3 VGS(th) Type Max Units Static Characteristics Drain-source on-resistance Note3 Forward tranconductance Note3 RDS(on) gFS V -1 µA ±100 nA -0.9 V VGS =-4.5V, ID =-3.3A 57 mΩ VGS =-2.5V, ID =-2.8A 76 mΩ VGS =-1.8V, ID =-2.3A 100 mΩ VGS =±12V, VDS =0V VDS =VGS, ID =-250µA VDS =-5V, ID =-3.3A -0.4 3 S Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 715 VDS =-6V,VGS =0V,f=1MHz 170 pF 120 Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time 25 td(on) tr td(off) ID=-1A， VDD=-6V, 55 VGS=-4.5V，RGEN =1Ω, 90 RL =6Ω, Turn-off fall time tf 60 Total gate charge Qg 13 Gate-source charge Qgs Gate-drain charge Qgd VDD =-6V,VGS =-4.5V,ID =-4.3A 1.2 ns nC 1.6 Source-Drain Diode characteristics Diode Forward voltage VDS VGS =0V, IS=-1.6A 1.2 V Notes:1. Repetitive rating: Pluse width limited by junction temperature. 2. Surface mounted on FR4 board，t ≦ 10 sec. 3. Pulse test: pulse width ≦ 300us, duty cycle≦ 0.5%. www.pingjingsemi.com Revision：1.0 Jun-2018 2/5 PJM2321PSA P-Channel Power MOSFET Typical Characteristic Curves Output Characteristics -16 Ta=25℃ Pulsed Transfer Characteristics -10 VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V Ta=25℃ Pulsed VGS=-2.0V (A) ID DRAIN CURRENT DRAIN CURRENT ID (A) -8 -12 -8 VGS=-1.5V -6 -4 -4 -2 -0 VGS=-1.0V -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 300 VDS -0 -0.0 -4 (V) ID -1.5 RDS(ON) —— 500 -2.0 -2.5 VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 400 (mΩ) (mΩ) RDS(ON) 200 150 VGS=-1.8V 100 VGS=-2.5V 50 ON-RESISTANCE RDS(ON) -1.0 GATE TO SOURCE VOLTAGE 250 ON-RESISTANCE -0.5 300 200 ID=-3.3A 100 VGS=-4.5V 0 -0 -2 -4 -6 DRAIN CURRENT -8 ID -10 -12 (A) 0 -0 -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) IS —— VSD -20 Ta=25℃ Pulsed SOURCE CURRENT IS (A) -10 -3 -1 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE www.pingjingsemi.com Revision：1.0 Jun-2018 -1.2 -1.4 VSD (V) 3/5 PJM2321PSA P-Channel Power MOSFET Package Outline SOT-23 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 0.500 8o 2.2 Typ. 0.900 0.8 1.0 Min. A 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device Package Shipping PJM2321PSA SOT-23 3000PCS/Reel&Tape www.pingjingsemi.com Revision：1.0 Jun-2018 4/5 PJM2321PSA P-Channel Power MOSFET Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.0 Jun-2018 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 5/5