PJM2312NSA

PJM2312NSA N- Enhancement Mode Field Effect Transistor Features  Small Package：SOT-23  RDS(ON)＜ 33mΩ@VGS=4.5V SOT-23 RDS(ON)＜40mΩ@VGS=2.5V  Advanced Trench Technology 1. Gate 2.Source 3.Drain Marking: S12 Applications  Load Switching for portable Application  DC/DC Converter Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwise specified. Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5 Pulsed Drain Current IDM 20 Maximum Power Dissipation PD 1.25 W Junction Temperature TJ 150 ℃ TSTG -55 to 150 ℃ Parameter Storage Temperature Range A Thermal Characteristics Parameter Thermal Resistance,Junction-to-Ambient Note1 www.pingjingsemi.com Revision：1.0 Oct-2018 Symbol Limit Unit RθJA 100 ℃/W 1/6 PJM2312NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit V(BR)DSS VGS = 0V, ID = 250μA 20 - - V Gate Leakage Current IGSS VDS = 0V, VGS = ±12V - - ±100 nA Zero Gate Voltage Drain Current IDSS VDS =20V, VGS = 0V - - 1 μA Gate Threshold Voltage Note2 VGS(th) VDS = VGS, ID = 250μA 0.5 0.7 1.0 V Drain-Source On-ResistanceNote2 RDS(ON) VGS = 4.5V, ID = 4.5A - - 33 VGS = 2.5V, ID = 4.0A - - 40 VDS = 10V, ID = 4.0A - 10 - - 865 - - 105 - - 55 - - 10 - - 20 - - 32 - - 12 - - 0.75 1.2 Static Characteristics Drain-Source Breakdown Voltage Forward transconductance Note2 gfs mΩ S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHz pF Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VDD = 10V, RL = 2.2Ω RG = 1Ω, VGEN = 5V ID = 4A tf ns Drain-Source Diode Characteristics Forward Diode Voltage VSD VGS = 0V, IS = 4A V Notes:1. Surface mounted on FR4 board，t ≤ 10 sec. 2. Pulse test: pulse width ≦ 300us, duty cycle≦ 2%. www.pingjingsemi.com Revision：1.0 Oct-2018 2/6 PJM2312NSA N- Enhancement Mode Field Effect Transistor Typical Characteristics Curves Output Characteristics Transfer Characteristics 20 14 Ta=25℃ VGS=3V,4V,5V,6V VDS=3V Pulsed 18 Pulsed 12 (A) Ta=25℃ 14 12 10 8 6 10 Ta=100℃ ID VGS=2V DRAIN CURRENT DRAIN CURRENT ID (A) 16 VGS=1.5V 8 6 4 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE VDS 4.0 4.5 0 0.0 5.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE RDS(ON) —— ID 2.5 VGS 3.0 (V) RDS(ON) —— VGS 40 150 Ta=25℃ Pulsed Pulsed ID=5A (m) RDS(ON) 30 VGS=2.5V 25 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 35 20 VGS=4.5V 100 Ta=100℃ 50 15 Ta=25℃ 10 0.5 0 1.0 1.5 2.0 2.5 3.0 DRAIN CURRENT 3.5 ID 4.0 4.5 5.0 0 (A) 1 2 3 GATE TO SOURCE VOLTAGE 4 VGS (V) Threshold Voltage IS —— VSD 6 1.2 Pulsed VTH 1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.0 Ta=25℃ 0.1 0.8 ID=250uA 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTA VOLTAGE www.pingjingsemi.com Revision：1.0 Oct-2018 1.4 VSD (V) 1.6 1.8 0.0 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) 3/6 PJM2312NSA N- Enhancement Mode Field Effect Transistor Package Outline SOT-23 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.8 1.9 SOT-23 0.550REF L1 2.2 Typ. 0.900 A 1.0 Dimensions in millimeter Min. 1.0 Symbol L 0.300 0.500 θ 0o 8o Recommended soldering pad ORDERING INFORMATION Device PJM2312NSA www.pingjingsemi.com Revision：1.0 Oct-2018 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM2312NSA N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245℃. If peak temperature is below 245℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Oct-2018 5/6 PJM2312NSA N- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data T G 4.0 4.0 N F D B H 8.0 E 120°±2° 1Pin C A Tape (8mm) Reel (7'') www.pingjingsemi.com Revision：1.0 Oct-2018 Symbol A B C E F D G H N T Value (unit: mm) 3.15 ± 0.1 2.7 ± 0.1 1.25 ± 0.1 2 ± 0.5 13 ± 0.5 178 ± 2.0 8.4 ± 1.5 4 ± 0.5 60 < 14.9 6/6