PJM2307PSA

PJM2307PSA P- Enhancement Mode Field Effect Transistor SOT-23 Features    VDS = -30V,ID = -2.7A RDS(ON) = 110mΩ (Typ.) @ VGS=-4.5V RDS(ON) = 73mΩ (Typ.) @ VGS=-10V Low gate charge and RDS(ON) Low reverse transfer capacitances 1. Gate 2.Source 3.Drain Marking: R7 Schematic Diagram Application  Load switch and in PWM applicatopns  Power management Drain 3 1 Gate 2 Source Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified. Symbol Value Units Drain-Source Voltage Parameter -VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 2.7 A Power Dissipation PD 0.9 W 150, -55 to 150 °C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 139 °C/W www.pingjingsemi.com Revision:1.1 Jun-2019 1/6 PJM2307PSA P- Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25℃ unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics -V(BR)DSS VGS = 0V, ID =-250µA Gate-Source Leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current -IDSS VDS =-30V, VGS =0V 1 µA 3 V Drain-Source Breakdown Voltage Gate threshold voltage Note2 -VGS(th) Drain-Source On-State Resistance Note2 RDS(on) Forward Transconductance Note2 gfs VDS =VGS, ID = -250µA 30 V 1 VGS =-4.5V, ID =-2.5A 110 138 VGS =-10V, ID =-3.5A 73 88 VDS =-10V, ID =-3.5A 7 mΩ S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 340 VDS =-15V,VGS =0V,f =1MHz pF 67 51 Switching Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS =-15V,VGS =-4.5V, ID =-2.5A 4.1 6.2 nC 1.3 1.8 VDD=-15V, RL=15Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω tf 40 60 40 60 20 40 17 30 0.8 1.2 ns Source-Drain Diode characteristics Body Diode Voltage -VSD IS=-0.75A, ,VGS =0 V Notes: 1. Surface mounted on FR4 board，t ≤ 10 sec. 2. Pulse Test :pulse width < 300µs, duty cycle ≤2%. www.pingjingsemi.com Revision:1.1 Jun-2019 2/6 PJM2307PSA P- Enhancement Mode Field Effect Transistor Typical Characteristics Curves Output Characteristics -20 Pulsed Ta=25℃ Pulsed VGS=-4.5V (A) -8 (A) -16 ID ID VGS=-4.0V -6 VGS=-3.5V -8 VGS=-3.0V DRAIN CURRENT DRAIN CURRENT -12 -4 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -5 -0 -1 -2 -3 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) —— 500 -4 VGS -5 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 400 RDS(ON) (m) 250 200 ON-RESISTANCE (m) 300 RDS(ON) -4 -2 -0 ON-RESISTANCE Transfer Characteristics -10 VGS=-10V,-8V,-6V Ta=25℃ VGS=-4.5V 150 VGS=-10V 100 300 ID=-3.5A 200 100 50 0 -0 -4 -8 DRAIN CURRENT -12 ID -16 -20 (A) -0 -4 -8 -12 GATE TO SOURCE VOLTAGE -16 VGS -20 (V) IS —— VSD -10 Ta=25℃ SOURCE CURRENT IS (A) Pulsed -1 -0.1 -0.01 -0.0 -0.3 -0.6 -0.9 SOURCE TO DRAIN VOLTAGE www.pingjingsemi.com Revision:1.1 Jun-2019 -1.2 -1.5 VSD (V) 3/6 PJM2307PSA P- Enhancement Mode Field Effect Transistor Package Outline SOT-23 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 0o θ 0.500 8o 2.2 Typ. 0.900 0.8 1.0 Min. A 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 (TO-236) Recommended Soldering Pad Ordering Information Device PJM2307PSA www.pingjingsemi.com Revision:1.1 Jun-2019 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM2307PSA P- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Figure Recommended peak temperature is over 245℃. If peak temperature is below 245℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision:1.1 Jun-2019 5/6 PJM2307PSA P- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision:1.1 Jun-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6