PJM2306NSA

PJM2306NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features  Fast Switching  Low RDS(ON) and Gate Charge  Low Reverse Transfer Capacitance  Halogen and Antimony Free (HAF) Product is acquired 1. Gate 2.Source 3.Drain Marking: S6 Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3.16 A Drain Current-Pulsed Note 1 IDM 20 A Maximum Power Dissipation PD 0.75 W TJ,TSTG -55 To 150 ℃ Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance,Junction-to-Ambient Note 2 www.pingjingsemi.com Revision：1.1 Dec-2018 Symbol Limit Unit RθJA 167 ℃/W 1/6 PJM2306NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25℃ unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA 30 Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V 0.5 µA Gate-Body Leakage IGSS VDS =0V, VGS =±20V ±100 nA Gate-Threshold Voltage Note3 VGS(th) VDS =VGS, ID =250µA 3 V Drain-Source On-Resistance Note3 RDS(on) Static Characteristics Forward Transconductance Note3 gfs V 1 VGS =10V, ID =3.5A 38 47 VGS =4.5V, ID =2.8A 52 65 VDS =4.5V, ID =2.5A 7 mΩ S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 29 Total Gate Charge Qg 6 Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.6 Turn-On Delay Time td(on) 7 11 12 18 14 25 6 10 0.8 1.2 305 VDS =15V,VGS =0V,f =1MHz pF 65 Switching Characteristics Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS =15V,VGS =10V,ID =2.5A VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω tf 9 nC 1.6 ns Drain-Source Diode Characteristics Diode Forward Voltage VSD IS=1.25A,VGS=0V V Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.1 Dec-2018 2/6 PJM2306NSA N- Enhancement Mode Field Effect Transistor Typical Characteristics Curves Output Characteristics 20 Transfer Characteristics 14 VGS=7V VGS=6V VDS=3V 12 VGS=5V Ta=100℃ 10 ID (A) 12 DRAIN CURRENT ID DRAIN CURRENT (A) 16 VGS=4V 8 8 Ta=25℃ 6 4 VGS=3V 4 2 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE VDS 0 4 0.0 0.4 (V) 0.8 1.2 1.6 2.0 2.4 2.8 3.2 GATE TO SOURCE VOLTAGE 3.6 VGS 4.0 4.4 4.8 (V) RDS(ON) —— VGS RDS(ON) —— ID 80 400 Ta=25℃ Pulsed (mΩ) 40 300 ID=2.5A RDS(ON) RDS(ON) 50 VGS=4.5V ON-RESISTANCE (mΩ) 60 ON-RESISTANCE 70 VGS=10V 30 20 200 Ta=100℃ 100 Pulsed Ta=25℃ 10 Pulsed 0 0 1 2 3 4 5 6 DRAIN CURRENT ID 7 8 9 0 10 0 (A) 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE 7 VGS 8 9 10 (V) Threshold Voltage IS —— VSD 10 2.0 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.8 1 Ta=100℃ Ta=25℃ Pulsed Pulsed 1.6 ID=-250uA 1.4 1.2 1.0 0.8 0.1 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE www.pingjingsemi.com Revision：1.1 Dec-2018 1.6 VSD (V) 2.0 0.6 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) 3/6 PJM2306NSA N- Enhancement Mode Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Typ. Max. 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 θ 0° 0.500 8° 2.2 Min. A 1.0 Dimensions in millimeter 0.8 1.0 Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device PJM2306NSA www.pingjingsemi.com Revision：1.1 Dec-2018 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM2306NSA N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.1 Dec-2018 5/6 PJM2306NSA N- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging 3,000 pcs per reel SOT-23 (TO-236) 1 3 2 30,000 pcs per box 10 reels per box 195 220 5 21 0 120,000 pcs per carton 4 boxes per carton 43 210 435 Embossed tape and reel data T G 4.0 4.0 N F D H 8.0 B E 120°±2° 1Pin C A Tape (8mm) Reel (7'') www.pingjingsemi.com Revision：1.1 Dec-2018 Symbol A B C E F D G H N T Value (unit: mm) 3.15 ± 0.1 2.7 ± 0.1 1.25 ± 0.1 2 ± 0.5 13 ± 0.5 178 ± 2.0 8.4 ± 1.5 4 ± 0.5 60 < 14.9 6/6