PJM2303PSA

PJM2303PSA P Enhancement Field Effect Transistor SOT-23 Features  VDS=-30V, ID=-2A RDS(on)=75mΩ (Typ.)@VGS=-10V  Excellent RDS(ON) 1. Gate 2.Source 3.Drain Marking: S03 Applications  Load Switch  PWM applications Schematic Diagram 3 Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Value Units Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 2 A Power Dissipation PD 0.9 W 150, -55 to 150 °C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 139 °C/W www.pingjingsemi.com Revision：1.0 Jun-2019 1/7 PJM2303PSA P Enhancement Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Static Characteristics 30 V -V(BR)DSS VGS = 0V, ID =-250µA Zero gate voltage drain current -IDSS VDS =-30V,VGS = 0V 1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Drain-source breakdown voltage VGS =-10V, ID =-2A 75 130 mΩ VGS =-4.5V, ID =-1.5A 115 180 mΩ 1.6 2.5 V Drain-source on-resistance Note2 RDS(on) Gate threshold voltage Note2 -VGS(th) VDS =VGS, ID =-250µA gFS VDS =-10V, ID =-2A Forward tranconductance Note2 1 2 S 226 pF 47 pF Dynamic Characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 28 pF Total Gate Charge Qg 8.5 nC Gate Source Charge Qgs 2.3 nC Gate Drain Charge Qgd 1.5 nC Turn-on delay time td(on) 9 nS 9 nS td(off) 18 nS tf 6 nS VDS =-15V,VGS =0V,f =1MHz Switching Characteristics Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=-10V,VDS=-15V, ID=-2A VGS=-10V,VDS=-15V, RL=15Ω,RGEN=6Ω Source-Drain Diode Characteristics Diode forward voltage VSD IS=-2A,VGS=0V -1.2 V Notes: 1. Surface mounted on FR4 board，t ≤ 10 sec. 2. Pulse test: Pulse width ≤300µs, duty cycle ≤2%. www.pingjingsemi.com Revision：1.0 Jun-2019 2/7 PJM2303PSA P Enhancement Field Effect Transistor ID- Drain Current (A) ID- Drain Current (A） Typical Curves TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V)  Vgs Gate-Source Voltage (V) Drain-Source On-Resistance Transfer Characteristics Normalized On-Resistance Rdson On-Resistance(mΩ) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Rdson vs Vgs www.pingjingsemi.com Revision：1.0 Jun-2019 Output Characteristics ID- Drain Current (A) Rdson On-Resistance(Ω) Drain Current TJ-Junction Temperature(℃) Drain-Source On-Resistance 3/7 C Capacitance (pF) ID- Drain Current (A) PJM2303PSA P Enhancement Field Effect Transistor Vds Drain-Source Voltage (V) Capacitance vs Vds Safe Operation Area Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vds Drain-Source Voltage (V) Vsd Source-Drain Voltage (V) Gate Charge Source- Drain Diode Forward r(t),Normalized Effective Transient Thermal Impedance Qg Gate Charge (nC) Square Wave Pluse Duration(sec) Normalized Maximum Transient Thermal Impedance www.pingjingsemi.com Revision：1.0 Jun-2019 4/7 PJM2303PSA P Enhancement Field Effect Transistor Package Outline SOT-23 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 θ 0° 0.500 8° 2.2 Typ. 0.900 0.8 1.0 Min. A 1.0 Dimensions in millimeter Symbol 1.9 SOT-23 Recommended soldering pad Ordering Information Device PJM2303PSA www.pingjingsemi.com Revision：1.0 Jun-2019 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 5/7 PJM2303PSA P Enhancement Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Jun-2019 6/7 PJM2303PSA P Enhancement Field Effect Transistor Package Specifications  The method of packaging 3,000 pcs per reel SOT-23 1 3 2 30,000 pcs per box 10 reels per box 195 220 0 21 43 5 120,000 pcs per carton 4 boxes per carton 210 435 Embossed tape and reel data T G 4.0 4.0 N F D H 8.0 B E 120°±2° 1Pin C A Tape (8mm) Reel (7'') www.pingjingsemi.com Revision：1.0 Jun-2019 Symbol A B C E F D G H N T Value (unit: mm) 3.15 ± 0.1 2.7 ± 0.1 1.25 ± 0.1 2 ± 0.5 13 ± 0.5 178 ± 2.0 8.4 ± 1.5 4 ± 0.5 60 < 14.9 7/7