PJM123NSA

PJM123NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features ◆ Surface Mount Package ◆ Low RDS(ON) ◆ ESD protected(HBM) up to 2KV 1. Gate 2.Source 3.Drain Marking: B123 Applications ◆ Switching Application ◆ Small Servo Motor Controls Schematic diagram D G S Absolute Maximum Ratings (TC=25℃, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 0.17 IDM 0.68 Power Dissipation PD 0.9 W Junction Temperature TJ 150 °C TSTG -55 to 150 °C Symbol Typ. Units RθJA 139 °C/W Continuous Drain Current Pulsed Drain Current tp=10μs Storage Temperature Range A Thermal Characteristics Parameter Maximum Junction-to-Ambient Note1 www.pingjingsemi.com Revision：1.1 Jan-2019 1/6 PJM123NSA N- Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 100 - - V Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250μA Gate Leakage Current IGSS VDS = 0V, VGS = ±20V - - ±10 μA Zero Gate Voltage Drain Current IDSS VDS =100V, VGS = 0V - - 1 μA VGS(th) VDS = VGS, ID = 250μA 1 - 3 V VGS = 10V, ID =0.17A - 3.5 6 Ω VGS = 4.5V, ID =0.17A - 3.8 10 Ω VDS = 10V, ID = 0.17A 80 - - mS - 29 60 - 10 15 - 2 6 - - 8 - - 8 Gate Threshold Voltage Note2 Drain-Source On-Resistance Note2 Forward transconductance Note2 RDS(ON) gfs Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1MHz pF Switching Parameters Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) - - 13 Turn-Off Fall Time tf - - 16 Total Gate Charge Qg - 1.4 2 Gate-Source Charge Qgs - 0.15 0.25 Gate-Drain Charge Qgd - 0.2 0.4 IS - - 0.17 A - - 1.3 V VDD=30V, VGS=10V RGEN=50Ω, ID=0.28A VDS=10V,VGS=10V,ID=0.22A ns nC Drain-source Diode Parameters Source-Drain Diode Current Forward Diode Voltage VSD VGS = 0V, IS = 0.34A Notes:1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse width=300μs, duty cycle≤2%. www.pingjingsemi.com Revision：1.1 Jan-2019 2/6 PJM123NSA N- Enhancement Mode Field Effect Transistor Ratings And Characteristic Curves Output Characteristics Transfer Characteristics 450 450 Ta=25℃ VGS=4V,5V,6V 400 Pulsed VGS=3V Pulsed (mA) 350 300 ID 300 VGS=2.5V 250 DRAIN CURRENT ID (mA) 350 DRAIN CURRENT VDS=3V 400 200 150 100 Ta=100℃ 200 150 100 VGS=2V 50 0 0.0 Ta=25℃ 250 50 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE VDS 4.0 4.5 0 0.0 5.0 0.5 1.0 (V) 1.5 2.0 2.5 3.0 GATE TO SOURCE VOLTAGE VGS 3.5 RDS(ON) —— VGS RDS(ON) —— ID 6 30 Pulsed Ta=25℃ ID=0.17A 25 RDS(ON) ( ) 5 RDS(ON) VGS=4.5V ON-RESISTANCE ( ) Pulsed ON-RESISTANCE 4.0 (V) 4 VGS=10V 3 20 15 10 Ta=100℃ 5 Ta=25℃ 2 50 100 150 200 DRAIN CURRENT 250 D 300 0 350 0 (mA) 1 2 3 4 5 6 7 GATE TO SOURCE VOLTAGE GS 8 9 10 (V) Threshold Voltage IS —— VSD 400 2.0 1.8 VTH Ta=25℃ Ta=100℃ 10 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTA VOLTAGE www.pingjingsemi.com Revision：1.1 Jan-2019 THRESHOLD VOLTAGE 100 SOURCE CURRENT IS (mA) (V) Pulsed 1.0 SD 1.2 (V) 1.4 1.6 ID=250uA 1.4 1.2 1.0 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) 3/6 PJM123NSA N- Enhancement Mode Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Typ. Max. 0.900 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.550REF L1 L 0.300 θ 0° 0.500 8° 2.2 Min. A 1.0 Dimensions in millimeter 0.8 1.0 Symbol 1.9 SOT-23 (TO-236) Recommended soldering pad Ordering Information Device PJM123NSA www.pingjingsemi.com Revision：1.1 Jan-2019 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM123NSA N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.1 Jan-2019 5/6 PJM123NSA N- Enhancement Mode Field Effect Transistor Package Specifications  The method of packaging Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 220 195 0 435 21 43 5 120,000 pcs per carton 4 boxes per carton 210  Embossed tape and reel data D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：1.1 Jan-2019 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6