AC4616

AC4616 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET N channel P channel V General Description N+P Complementary Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID Part ID Package Type Marking Tape and reel infomation AC4616 SOP8 9N03C 3000 Parameter 30 -30 V 14.0 23.0 mΩ 18.0 23.0 mΩ 10 -8 A 100% UIS Tested Symbol Max N-channel Max P-channel Units Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS 20 20 ±V 10 -8 8 -6 IDM 16 -12.8 IAR 3.2 -2.6 EAR 7.36 -5.9 2 2 1.3 1.3 -55 to 150 -55 to 150 Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B G Repetitive avalanche energy L=0.1mH Power Dissipation ID G TA=25°C A PD TA=70°C Junction and Storage Temperature Range TJ, TSTG A mJ W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State 第 1 页 RθJA RθJL Typ Max Units 70 105 °C/W 140 168 °C/W 42 67 °C/W AC4616 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min Typ Max Units 30 V 1 5 uA ±100 nA 1.8 2.4 V #REF! 14.0 20.0 VGS=4.5V, ID=8.5A 18.0 23.4 Forward Transconductance VDS=5V, ID=8.5A 46 Diode Forward Voltage IS=1A,VGS=41V 0.72 1.2 mΩ S 1 V 8.5 A Typ Max Units 740 902 pF 110 135 pF 82 97 pF 1.5 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 4 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge Conditions Min Typ 7.5 VGS=10V, VDS=15V, ID=8.5A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 3.75 2.1 3.2 11.2 nC ns 3.6 IF=-8A, dI/dt=500A/µs 8 ns IF=18A, dI/dt=500A/µs 18 nC 第 2 页 AC4616 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 3 页 AC4616 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 4 页 AC4616 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min Typ Max Units -30 V -1 -5 uA ±100 nA -1.9 -2.5 V VGS=-10V, ID=-7A 30.0 30.0 VGS=-4.5V, ID=-7A 33.0 42.9 Forward Transconductance VDS=-5V, ID=-7A 42 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.3 mΩ S -1 V -7 A Typ Max Units 1040 1268 pF 180 221 pF 125 148 pF 2.3 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 4.6 tD(on) Turn-On DelayTime 5.75 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge Conditions Min Typ 9.6 VGS=-10V, VDS=-15V, ID=-7A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 4.8 3.22 4.6 16.1 nC ns 5.175 IF=-8A, dI/dt=500A/µs 11.5 ns IF=18A, dI/dt=500A/µs 25 nC 第 5 页 AC4616 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 6 页 AC4616 亚芯电子（深圳）有限公司 N+P Complementary Power MOSFET 第 7 页