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SR160

SR160

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DO41

  • 描述:

    直流反向耐压(Vr):60V 平均整流电流(Io):1A 正向压降(Vf):700mV@1A

  • 数据手册
  • 价格&库存
SR160 数据手册
SR120 THRU SR1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere SCHOTTKY BARRIER RECTIFIER Features DO-41  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  Metal silicon junction,majority carrier conduction  Low power loss,high efficiency  High forward surge current capability  High temperature soldering guaranteed: 250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160(4.1) Mechanical Data 1.0 (25.4) MIN. Case : JEDEC DO-41 Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight : 0.012 ounce, 0.33 grams 0.034 (0.86) 0.028 (0.70) DIA. Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) SR SR SR SR SR SR SR SR SR SR SR 120 130 140 150 160 170 180 190 1100 1150 1200 SYMBOLS MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD MDD SR SR SR SR SR SR SR SR SR SR SR 120 130 140 150 160 170 180 190 1100 1150 1200 VRRM V RMS V DC Typical junction capacitance (NOTE 1) CJ Storage temperature range 40 28 40 50 35 50 60 42 60 0.55 0.70 0.5 90 63 90 100 150 200 70 105 140 100 150 200 A 5.0 80 110 50.0 -50 to +125 V V V A 0.85 10.0 R θ JA T STG 80 56 80 40 IR TJ 70 49 70 1.0 IFSM VF Operating junction and storage 30 21 30 I(AV) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25℃ at rated DC blocking voltage TA=100℃ Typical thermal resistance (NOTE 2) 20 14 20 UNITS -50 to +150 -50 to +150 0.95 0.2 2.0 V mA pF ℃/W ℃ ℃ Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted DN:T20526A0 http://www.microdiode.com Rev:2020A0 Page :1 SR120 THRU SR1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere FIG. 1- FORWARD CURRENT DERATING CURVE 1 0.8 Single Phase Half Wave 60Hz Resistive or inductive Load 0.6 0.4 SR120-SR160 SR170-SR1200 0.2 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Ratings And Characteristic Curves FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 40 32 24 16 8 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 20 10 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE SR120-SR140 SR150-SR160 SR170-SR1150 SR1200 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.1 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1 100 10 TJ=100 C 1 TJ=75 C 0.1 TJ=25 C 0.01 0.001 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0 20 40 60 80 100 2000 1000 SR120-SR140 SR150-SR1200 100 TJ=25 C TRANSIENT THERMAL IMPEDANCE, C/W PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 100 NUMBER OF CYCLES AT 60 Hz FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 10 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 t,PULSE DURATION,sec. The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :2
SR160 价格&库存

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SR160
  •  国内价格
  • 10+0.13398
  • 50+0.12354
  • 200+0.11484
  • 600+0.10614
  • 1500+0.09918
  • 3000+0.09483

库存:950