TPUSBLC6-2P6

TPUSBLC6-2P6

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOT666

  • 描述:

    ESD抑制器/TVS二极管 VRWM=5V VBR(min)=6.5V VC=16V@IPP=5A SOT666

  • 数据手册
  • 价格&库存
TPUSBLC6-2P6 数据手册
TPUSBLC6-2P6 Low Capacitance TVS Diode Array www.sot23.com.tw Features ● ● ● ● ● Mechanical Characteristics Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV –IEC61000-4-4 (EFT) 40A (5/50ns) –IEC61000-4-5 (Lightning) 5A (8/20μs) RoHS Compliant Package: SOT-666 ●  Lead Finish: Matte Tin ● UL Flammability Classification Rating 94V-0 Applications ● ● ● 子 ● USB 2.0 power and data line Set-top box and digital TV Digital video interface (DVI) Notebook Computers SIM Ports 10/100 Ethernet ● Ordering Information Reel Size 3000 7” 舟 TPUSBLC6-2P6 Qty per Reel 台 Part Number 电 ● Dimensions and Pin Configuration I/O1 VBUS I/O2 I/O1 GND I/O2 1 TPUSBLC6-2P6 Low Capacitance TVS Diode Array www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 100 W Peak Pulse Current (8/20µs) Ipp 5 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range kV TJ −55 to +125 °C Tstg −55 to +150 °C 子 Storage Temperature Range ±30 Symbol Reverse Working Voltage Breakdown Voltage VBR Typ Max Unit 5 V 6.5 Test Condition V IT = 1mA IR 0.08 uA VRWM =5V Clamping Voltage VC 10 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 16 V IPP = 5A (8 x 20us pulse) Junction Capacitance CJ 0.8 0.9 pF VR = 0V, f = 1MHz (IO to GND) Junction Capacitance CJ 0.3 pF VR = 0V, f = 1MHz (IO to IO) 台 Reverse Leakage Current VRWM Min 舟 Parameter 电 Electrical Characteristics (TA=25°C unless otherwise specified) 2 TPUSBLC6-2P6 Low Capacitance TVS Diode Array www.sot23.com.tw Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP 80 Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 20 0 5 10 15 20 25 30 t - Time ( s) Power Derating Curve 电 Fig3. 舟 90 80 70 60 50 40 30 20 10 0 台 % of Rated Power 110 100 0 25 50 75 100 125 10% 子 0 90% 150 Ambient Temperature –TA (ºC) 3 tr = 0.7~1ns 30ns 60ns Time (ns) TPUSBLC6-2P6 Low Capacitance TVS Diode Array www.sot23.com.tw Outline Drawing - SOT-666 D A D N E/2 E1 E L 2 1 e c Nxb aaa C A-B D A DIM A b c D E E1 e L L1 N aaa DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .019 .024 .005 .012 .003 .007 .059 .063 .067 .061 .063 .067 .043 .047 .049 .020 BSC .003 .008 .012 .003 .006 .008 6 .004 0.50 0.60 0.15 0.30 0.10 0.18 1.50 1.60 1.70 1.55 1.60 1.70 1.10 1.20 1.25 0.50 BSC 0.10 0.20 0.30 0.10 0.15 0.20 6 0.10 电 C 子 B 台 舟 L1 Land Pattern -SOT-666 X Y Z C G Y DIM C P G X Y Z P 4 DIMENSIONS INCHES MILLIMETERS (.057) .020 .024 .012 .033 .090 (1.45) 0.50 0.60 0.30 0.85 2.30
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