0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
TPPESD5V0S1BB

TPPESD5V0S1BB

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOD-523

  • 描述:

    ESD抑制器/TVS二极管 SOD-523 9V 7A

  • 数据手册
  • 价格&库存
TPPESD5V0S1BB 数据手册
TPPESD5V0S1BB Bi -directional TVS Diode WWW.SOT23.COM.TW Features Mechanical Characteristics  Protects one data or power line  Package: SOD-523  Ultra low leakage: nA level  Lead Finish: Matte Tin  Low operating voltage: 5V  Case Material: “Green” Molding Compound.  Low clamping voltage  UL Flammability Classification Rating 94V-0  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below RoHS Compliant   Ordering Information Qty per Reel IC 7” 3000 CH TPPESD5V0S1BB Reel Size   PU Part Number BL    Cellular Handsets & Accessories Digital Visual Interface (DVI) Display Port MDDI Ports USB Ports PCI Express Serial ATA TE  Applications Dimensions and Pin Configuration WWW.TECHPUBLIC.COM.TW TPPESD5V0S1BB Bi -directional TVS Diode WWW.SOT23.COM.TW Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit IPP 7 A Peak Pulse Current (8/20µs) ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range TJ −55 to +125 °C Tstg −55 to +150 °C IC Storage Temperature Range kV ±30 Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Nominal Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown Voltage @ IT PU VRWM Test Current for Reverse Breakdown VC Clamping Voltage @ IPP IPP Maximum Peak Pulse Current f IT IR VC VBR VRWM IR IT VRWM VBR VC V Parasitic Capacitance Reverse Voltage TE VR I IPP CH IT CESD BL Symbol IPP Small Signal Frequency Parameter Reverse Working Voltage Breakdown Voltage Symbol Bi-Directional TVS Min Typ VRWM VBR 6 8 Max Unit Test Condition 5 V 9 V It=1mA Reverse Leakage Current IR 200 nA VRWM= 5V Clamping Voltage VC 7 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 16 9 V IPP = 7A (8 x 20 s pulse) Junction Capacitance CJ 15 pF VR = 0V, f = 1MHz WWW.TECHPUBLIC.COM.TW TPPESD5V0S1BB Bi -directional TVS Diode WWW.SOT23.COM.TW Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 30 t - Time ( s) Power Derating Curve tr = 0.7~1ns Time (ns) 30ns 60ns CH 110 100 90 80 70 60 50 40 30 20 10 0 TE % of Rated Power 10% PU Fig3. IC 80 90% BL IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 0 25 50 75 100 125 150 Ambient Temperature –TA (ºC) WWW.TECHPUBLIC.COM.TW TPPESD5V0S1BB Bi -directional TVS Diode WWW.SOT23.COM.TW Outline Drawing - SOD-523 SOD-523 A Millimeters 1 2 C K Max Min Max A 1.10 1.30 0.043 0.051 B 0.70 0.90 0.028 0.035 C 0.50 0.70 0.020 0.028 D 0.25 0.35 0.010 0.014 J 0.07 0.20 K 0.15 0.25 0.006 0.010 S 1.50 1.70 0.059 S 0.067 0.0028 0.0079 PU J Min BL D DIM IC B Inches CH Land Pattern - SOD-523 TE Recommended Mounting Pad Layout 1.40 0.0547 0.40 0.0157 0.40 0.0157 Dimensions in ( millimeters ) inches WWW.TECHPUBLIC.COM.TW
TPPESD5V0S1BB 价格&库存

很抱歉,暂时无法提供与“TPPESD5V0S1BB”相匹配的价格&库存,您可以联系我们找货

免费人工找货
TPPESD5V0S1BB
  •  国内价格
  • 1+0.08960
  • 30+0.08645
  • 100+0.08014
  • 500+0.07383
  • 1000+0.07067

库存:2522