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TPPESD5V0S1BA

TPPESD5V0S1BA

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOD323

  • 描述:

    ESD抑制器/TVS二极管 SOD323 20V 7A

  • 数据手册
  • 价格&库存
TPPESD5V0S1BA 数据手册
TPPESD5V0S1BA BI-directional TVS Diode www.sot23.com.tw Mechanical Characteristics Features  150W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage:nA level  Operating voltage:5V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  RoHS Compliant        Cellular Handsets and Accessories Personal Digital Assistants Notebooks and Handhelds Portable Instrumentation Peripherals Pagers Peripherals Desktop and Servers 3000 7” IC BL Reel Size CH PU Qty per Reel TE TPPESD5V0S1BA Package: SOD-323 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below Applications Ordering Information Part Number        1 2 TPPESD5V0S1BA BI-directional TVS Diode www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol ESD per IEC 61000−4−2 (Air) Value ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C IC Storage Temperature Range Unit Symbol Parameter Nominal Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown Voltage @ IT PU VRWM Test Current for Reverse Breakdown VC Clamping Voltage @ IPP IPP Maximum Peak Pulse Current f VC VBR VRWM IT IR IR IT VRWM VBR VC V Parasitic Capacitance Reverse Voltage IPP TE VR I IPP CH IT CESD BL Electrical Characteristics (TA=25°C unless otherwise specified) Small Signal Frequency Parameter Reverse Working Voltage Breakdown Voltage Symbol Bi-Directional TVS Min VRWM VBR Typ Max Unit 5 V 6 Test Condition V IT = 1mA Reverse Leakage Current IR 0.5 µA VRWM = 5V Clamping Voltage VC 11 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 20 V IPP = 7A (8 x 20 s pulse) Peak Pulse Current IPP 7 A tp=8/20µs Junction Capacitance CJ 21 pF VR = 0V, f = 1MHz TPPESD5V0S1BA BI-directional TVS Diode www.sot23.com.tw PROTECTION PRODUCTS Typical charateristics Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 30 t - Time ( s) Power Derating Curve 110 100 CH 90 80 70 60 50 40 30 20 10 0 TE % of Rated Power 10% PU Fig3. 0 25 50 75 100 125 Ambient Temperature –TA (ºC) 150 IC 80 90% tr = 0.7~1ns BL IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 30ns 60ns Time (ns) TPPESD5V0S1BA BI-directional TVS Diode www.sot23.com.tw Outline Drawing - SOD-323 A DIMENSIONS MILLIMETERS INCHES MIN MAX MIN MAX 1.50 1.80 0.060 0.071 B 1.20 1.40 0.045 0.054 C 2.30 2.70 0.090 0.107 D - 1.10 - 0.043 E 0.30 0.40 0.012 0.016 F 0.10 0.25 0.004 0.010 H - 0.10 - 0.004 TE CH PU BL IC SYM Land Pattern - SOD-323 SYM DIMENSIONS MILLIMETERS INCHES A 3.15 0.120 B 0.80 0.031 C 0.80 0.031
TPPESD5V0S1BA 价格&库存

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TPPESD5V0S1BA
  •  国内价格
  • 1+0.09372
  • 30+0.09042
  • 100+0.08382
  • 500+0.07722
  • 1000+0.07392

库存:2229

TPPESD5V0S1BA
    •  国内价格
    • 1+0.11740

    库存:2305