TPPESD12VV1BL

TPPESD12VV1BL Bi -directional TVS Diode www.sot23.com.tw Features Mechanical Characteristics  Low operating voltage: ±12V        Ultra low capacitance: 7pF typical  Ultra low leakage: nA level  Low clamping voltage  2-pin leadless package  Complies with following standards: Package: DFN1006-2 (1.0×0.6×0.5mm) Lead Finish: NiPdAu Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below  – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV  – IEC61000-4-5 (Lightning) 8A (8/20μs)  RoHS Compliant Applications  Ordering Information 10000 Reel Size 7” 舟 TPPESD12VV1BL Qty per Reel    电 Part Number 子    Cellular Handsets & Accessories Personal Digital Assistants Display Port MDDI Ports Audio Players PCI Express Serial ATA 台 Dimensions and Pin Configuration C TPPESD12VV1BL Bi -directional TVS Diode www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20μs) PPK 150 W Peak Pulse Current (8/20μs) IPP 8 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Parameter VRWM Nominal Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown Voltage @ IT 电 Symbol 子 Electrical Characteristics (TA=25°C unless otherwise specified) Test Current for Reverse Breakdown VC Clamping Voltage @ IPP IPP Maximum Peak Pulse Current VR f Parasitic Capacitance Reverse Voltage 台 CESD VC VBR VRWM Reverse Working Voltage Breakdown Voltage Symbol Bi-Directional TVS Min Typ VRWM VBR VRWM VBR VC V IPP Small Signal Frequency Parameter IT IR IR IT 舟 IT I IPP Max 12 13.7 Unit Test Condition V V IT = 1mA Reverse Leakage Current IR 100 nA VRWM = 12V Clamping Voltage VC 20 V IPP = 8 A (8 x 20μs pulse) Junction Capacitance CJ 10 pF 7 VR = 0V, f = 1MHz TPPESD12VV1BL Bi -directional TVS Diode www.sot23.com.tw Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) tr 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % 60 40 td=t IPP/2 20 90% 10% 0 0 5 10 15 20 25 30 t - Time (μs) Non - Repetitive Peak Pulse Power vs. Pulse Time 电 Fig3. 舟 10 1 0.1 0.01 0.1 台 Peak Pulse Power - PPK (kW) 子 IPP - Peak Pulse Current - % of IPP 120 1 10 100 Pulse Duration - tp (μs) 1000 tr = 0.7~1ns 30ns 60ns Time (ns) TPPESD12VV1BL Bi -directional TVS Diode www.sot23.com.tw Outline Drawing - DFN1006-2 e D h A DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.45 0.50 0.55 0.018 0.020 0.022 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.45 0.50 0.55 0.018 0.020 0.022 c 0.12 0.15 0.18 0.005 0.006 0.007 D 0.95 1.00 1.05 0.037 0.039 0.041 SYM h - b E - L c A Bottom View 0.65 BSC 0.026 BSC E 0.55 0.60 0.65 0.022 0.024 0.026 L 0.20 0.25 0.30 0.008 0.010 0.012 h 0.07 0.12 0.17 0.003 0.005 0.007 电 A1 子 e 台 舟 Land Pattern - DFN1006-2 ╋ Y3 Y2 ╋ X SYM MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 Y1 Z DIMENSIONS