TPPESD12VL2BT

TPPESD12VL2BT 2 -L ine Bi -directional TVS Diode www.sot23.com.tw Mechanical Characteristics Features  300W peak pulse power(8/20µs)  Protects two bi-directional lines  Ultra low leakage：nA level       Operating voltage：12V  Low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  RoHS Compliant C -      7” UB 3000 Reel Size Cellular Handsets and Accessories Notebooks and Handhelds Portable Instrumentation Set Top Box Industrial Controls TE C HP TPPESD12VL2BT Qty per Reel LI Applications Ordering Information Part Number Package: SOT-23 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J STD 020 Dimensions and Pin Configuration Circuit and Pin Schematic 1 1 TPPESD12VL2BT 2 -L ine Bi -directional TVS Diode www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Ppk 300 W Peak Pulse Power(8/20µs) ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C IC Electrical Characteristics (TA=25°C unless otherwise specified) Nominal Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown Voltage @ IT PU VRWM Test Current for Reverse Breakdown VC Clamping Voltage @ IPP IPP Maximum Peak Pulse Current f VC VBR VRWM IT IR IR IT VRWM VBR VC V Parasitic Capacitance Reverse Voltage TE VR I IPP CH IT CESD BL Parameter Symbol IPP Small Signal Frequency Parameter Reverse Working Voltage Breakdown Voltage Symbol Bi-Directional TVS Min Typ VRWM VBR Max Unit 12 V V 13.3 0.1 µA Test Condition IT = 1mA VRWM = 12V Reverse Leakage Current IR 0.01 Clamping Voltage VC 15 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 24 V IPP = 10A (8 x 20µs pulse) Peak Pulse Current IPP 10 A tP=8/20µs Junction Capacitance CJ 24 pF VR=0, f=1MHz, Pin 1 to Pin 3 or Pin 2 to Pin 3 2 TPPESD12VL2BT 2 -L ine Bi -directional TVS Diode www.sot23.com.tw Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 80 60 40 td=t IPP/2 0 0 5 10 15 20 25 30 Time (ns) 30ns 60ns CH Power Derating Curve 110 100 90 80 70 60 50 40 30 20 10 0 TE % of Rated Power tr = 0.7~1ns PU t - Time ( s) Fig3. 10% BL 20 90% IC IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 0 25 50 75 100 125 150 Ambient Temperature –TA (ºC) 3 WWW.TPsemi.COM TPPESD12VL2BT 2 -L ine Bi -directional TVS Diode www.sot23.com.tw Outline Drawing - SOT23 D A DIM e1 H 3 B E1 GAUGE PLANE SEATING PLANE E C c 0 0.25 L L1 1 IC DETAIL A 2 bxN A2 A C A B 3X aaa C BL bbb e SIDE VIEW SEATING PLANE C .035 .000 .035 .012 .003 .110 .082 .047 .015 0° .037 .114 .093 .051 .075 .037 .020 .022 3 .004 .008 .044 .004 .040 .020 .007 .120 .104 .055 .024 8° 0.89 1.12 0.01 0.10 0.88 0.95 1.02 0.30 0.51 0.18 0.08 2.80 2.90 3.04 2.10 2.37 2.64 1.20 1.30 1.40 1.90 BSC 0.95 BSC 0.40 0.50 0.60 (0.55) 3 0° 8° 0.10 0.20 SEE DETAIL A TE CH PU A1 A A1 A2 b c D E E1 e e1 L L1 N 0 aaa bbb DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX Land Pattern - SOT23 X Y DIM Z G Y C DIMENSIONS INCHES MILLIMETERS (.087) .037 .075 .031 .039 .055 .141 C E E1 G X Y Z (2.20) 0.95 1.90 0.80 1.00 1.40 3.60 E E1 4 WWW.TPsemi.COM