TPNTK3139PT1G

TPNTK 31 39 PT1 G P-Channel Mosfet www.sot23.com.tw Product Summary Application  RDS(on)=Typ 530mΩ@VGS= -4.5V  RDS(on)=Typ 730mΩ@VGS= -2.5V   Lead free product is acquired   Surface mount package  P-channel switch with low RDS(on)  Operated at low logic level gate drive  ESD protection  Load/Power switch Interfacing, logic switching Battery management for ultra protable electronics Package and Pin Configuration Circuit diagram G SOT723 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current @25℃ (note 1) ID -0.85 A Pulsed Drain Current @25℃ (tp=10 µs) IDM -2.1 A Diode Continuous Forward Current IS -0.5 A Power Dissipation @25℃ (note 1) PD 690 mW RQJA 180 ℃/W TJ 150 ℃ TSTG -55 ~ +150 ℃ Thermal Resistance from Junction to Ambient (note 1) Maximum Junction Temperature Storage Temperature WWW.TECHPUBLIC.COM.TW TPNTK 31 39 PT1 G P-Channel Mosfet www.sot23.com.tw Electrical Characteristics ( TA = 25°C unless otherwise noted ) Parameter Symbol Test Condition Min Typ Max Unit Drain-source Breakdown Voltage V(BR)DS VGS = 0V, ID = -250μA Drain-to-Source Leakage Current IDS VDS = -16V,VGS = 0V -1 µA Gate-Body Leakage Current IGS VGS = ±12V, VDS = 0V ±10 µA Gate Threshold Voltage (note 2) VGS(th) VDS =VGS, ID = -250μA -0.75 -1 V VGS = -4.5V, ID = -0.55A 530 640 mΩ VGS = -2.5V, ID = -0.45A 730 950 mΩ VGS = -1.8V, ID = -0.35A 1300 1950 mΩ Static Drain-Source On-Resistance RDS(on) (note 2) Forward transconductance (note 2) gfs VDS = -5V, ID = -0.55A Diode forward voltage IS= -1A, VGS = 0V VSD -20 -0.5 V 1 -0.75 S -1.1 V Dynamic Characteristics (note 4) Total Gate Charge Qg Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -1A, 0.53 nC VDS = -10V 0.8 nC Qgs ID = -1A 0.2 nC Qgd VGS = -4.5V 0.2 nC trr I =- 9.2 nS Reverse Recovery Time trr IF= -1A,VGS = 0, 9.2 nS Reverse Recovery Charge Qrr dIF/dt=100A/us 0.8 nC Input capacitance Ciss VDS = -10V 58 pF Output capacitance Coss VGS =0V 5.7 pF Reverse transfer capacitance Crss f =1MHz 4.4 pF Turn-on delay time (note 3) td(on) VGS= -4.5V 0.4 µS Turn-on rise time (note 3) tr VDS= -10V 0.06 µS Turn-off delay time (note3) td(off) ID = -1.33A 0.02 µS Turn-off fall time (note 3) tf RGEN=3Ω 0.8 µS VGS = -2.5V 2 WWW.TECHPUBLIC.COM.TW TPNTK 31 39 PT1 G P-Channel Mosfet www.sot23.com.tw Package Outline Drawing BL IC SOT7 23 - TE CH PU Symbol Suggested Land Pattern A A1 b b1 c D E E1 e θ 3 DIMENSIONS MILLIMETERS INCHES MIN MAX MIN MAX 0.43 0.50 0.017 0.020 0.00 0.05 0.000 0.002 0.17 0.27 0.007 0.011 0.27 0.37 0.011 0.015 0.08 0.15 0.003 0.006 1.15 1.25 0.045 0.049 1.15 1.25 0.045 0.049 0.75 0.85 0.03 0.033 0.8 typ 0.031 typ 7o REF 7o REF WWW.TECHPUBLIC.COM.TW