TPNTK3134NT1G

关注公众号新品资讯 TPNTK 31 34 NT1 G N-Channel Mosfet www.sot23.com.tw Product Summary Application  RDS(on)=Typ 200mΩ@VGS= 4.5V  RDS(on)=Typ 250mΩ@VGS= 2.5V   Lead free product is acquired   Surface mount package  N-channel switch with low RDS(on)  Operated at low logic level gate drive  ESD protection  Load/Power switch Interfacing, logic switching Battery management for ultra protable electronics Package and Pin Configuration Circuit diagram SOT723 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current @25℃ (note 1) ID 0.95 A Pulsed Drain Current @25℃ (tp=10 µs) IDM 1.5 A Diode Continuous Forward Current IS 0.5 A Power Dissipation @25℃ (note 1) PD 150 mW RθJA 820 ℃/W TJ 150 ℃ TSTG -55 ~ +150 ℃ Thermal Resistance from Junction to Ambient (note 1) Maximum Junction Temperature Storage Temperature WWW.TECHPUBLIC.COM.TW TPNTK 31 34 NT1 G N-Channel Mosfet www.sot23.com.tw Electrical Characteristics ( TA = 25°C unless otherwise noted ) Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-source Breakdown Voltage V(BR)DS VGS = 0V, ID = 250μA Drain-to-Source Leakage Current IDS VDS = 16V,VGS = 0V 1 µA Gate-Body Leakage Current IGS VGS = ±8V, VDS = 0V ±10 µA Gate Threshold Voltage (note 2) VGS(th) VDS =VGS, ID = 250μA 0.65 1 V VGS = 4.5V, ID = 0.55A 200 350 mΩ VGS = 2.5V, ID = 0.50A 250 420 mΩ VGS = 1.8V, ID = 0.35A 310 480 mΩ VSD IS= 0.35A, VGS = 0V 0.9 1.5 V Total Gate Charge Qg VDS = 10V 1.15 nC Gate-Source Charge Qgs ID = 0.55A 0.15 nC Gate-Drain Charge Qgd VGS = 4.5V 0.23 nC Input capacitance Ciss VDS = 10V 50 pF Output capacitance Coss VGS =0V 13 pF Reverse transfer capacitance Crss f =100KHz 8 pF Turn-on delay time (note 3) td(on) VGS= 4.5V 22 nS Turn-on rise time (note 3) tr VDS= 10V 80 nS Turn-off delay time (note3) td(off) ID = 0.55A 700 nS Turn-off fall time (note 3) tf RGEN=6Ω 380 nS Static Drain-Source On-Resistance RDS(on) (note 2) Body-diode forward voltage 20 0.45 V Dynamic Characteristics (note 4) 2 WWW.TECHPUBLIC.COM.TW TPNTK 31 34 NT1 G N-Channel Mosfet www.sot23.com.tw Package Outline Drawing BL IC SOT7 23 - TE CH PU Symbol Suggested Land Pattern A A1 b b1 c D E E1 e θ 3 DIMENSIONS MILLIMETERS INCHES MIN MAX MIN MAX 0.43 0.50 0.017 0.020 0.00 0.05 0.000 0.002 0.17 0.27 0.007 0.011 0.27 0.37 0.011 0.015 0.08 0.15 0.003 0.006 1.15 1.25 0.045 0.049 1.15 1.25 0.045 0.049 0.75 0.85 0.03 0.033 0.8 typ 0.031 typ 7o REF 7o REF WWW.TECHPUBLIC.COM.TW