TPESDR0502BT1G

TPESDR0502BT1G Low Capacitance TVS Diode Array www.sot23.com.tw Features Mechanical Characteristics ⚫ Package: SOT-523 ⚫ Lead Finish: Matte Tin ⚫ Ultra low capacitance: 0.35pF typical ⚫ Ultra low leakage: nA level ⚫ Case Material: “Green” Molding Compound. ⚫ Moisture Sensitivity: Level 3 per J-STD-020 ⚫ Low operating voltage: ±5V ⚫ Low clamping voltage ⚫ Terminal Connections: See Diagram Below ⚫ Complies with following standards: ⚫ – IEC 61000-4-2 (ESD) immunity test Applications Air discharge: ±20kV Contact discharge: ±15kV - - (Lightning)4A (8/20μs) μs) ⚫ – IEC61000-4-5 ⚫ RoHS Compliant ⚫ Laptop Computers ⚫ Cellular Phones ⚫ Digital Cameras ⚫ Personal Digital Assistants (PDAs) ⚫ Lead Finish: NiPdAu Ordering Information Part Number Qty per Reel TPESDR0502BT1G 3000 Reel Size 7” Dimensions and Pin Configuration 1.60 0.50 BSC 3 0.80 1 2 1.00 BSC 0.75 1.60 TPESDR0502BT1G Low Capacitance TVS Diode Array www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 80 W Peak Pulse Current (8/20µs) Ipp 4 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Storage Temperature Range kV TJ −55 to +125 °C Tstg −55 to +150 °C 台 TE 舟 CH 电 PU B子L IC Operating Temperature Range ±30 Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR 6.5 Max Unit 5 V 9 V Test Condition IT = 1mA Reverse Leakage Current IR 0.08 uA Clamping Voltage VC 9 V Ipp=1A(8x 20us pulse) VC 15 V Ipp=4A(8x 20us pulse) 0.6 pF VR = 0V, f = 1MHz (IO to GND) pF VR = 0V, f = 1MHz (IO to IO) Clamping Voltage Junction Capacitance CJ 0.5 Junction Capacitance CJ 0.35 VRWM = 5V TPESDR0502BT1G Low Capacitance TVS Diode Array www.sot23.com.tw Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP 80 Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 30 Power Derating Curve % of Rated Power 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 10% tr = 0.7~1ns 30ns 60ns t - Time ( s) Fig3. 90% 100 125 Ambient Temperature –TA (ºC) 150 Time (ns) TPESDR0502BT1G Low Capacitance TVS Diode Array www.sot23.com.tw Outline Drawing - SOT-523 D e1 DIMENSIONS θ b1 c SYMBOL L1 L E E1 A1 e A MIN 0.028 MAX 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.325 0.010 0.013 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.750 0.850 0.030 0.033 E1 1.450 1.750 0.057 0.069 e A2 INCHES MAX 0.900 A b2 MILLIMETER MIN 0.700 e1 0.950 BSC 0.900 1.100 0.037 BSC 0.035 0.043 L L1 0.300 0.028 0.500 0.440 0.012 0.011 0.020 0.017 θ 0 8 0 8 ○ Land Pattern - SOT-523 DIMENSIONS X Z C G Y P1 P DIM INCHES MILLIMETERS C .055 1.40 P .039 1.00 P1 .020 0.50 G .024 0.60 X .016 0.40 Y .031 0..80 Z .087 2.20 ○