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TPESD9L5.0T5G

TPESD9L5.0T5G

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOD923

  • 描述:

    TVS二极管 VRWM=5V VBR(Min)=5.4V VC=25V IPP=4A Ppp=100W SOD923

  • 数据手册
  • 价格&库存
TPESD9L5.0T5G 数据手册
TPESD9L5.0T5G Low Capacitance Uni-Directional TVS Diode WWW.SOT23.COM.TW Features Mechanical Characteristics • Ultra Low Capacitance 0.5 pF • Low Clamping Voltage • Small Body Outline Dimensions: 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.016″ (0.4 mm) Stand−off Voltage: 5 V Low Leakage Response Time is Typically < 1.0 ns IEC61000−4−2 Level 4 ESD Protection This is a Pb−Free Device S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Applications    Ordering Information Qty per Reel Reel Size 8000 7” IEEE 1394  PCI Express  Portable Electronics  Notebooks TE CH TPESD9L5.0T5G DVI  PU Part Number HDMI 1.3 SATA and eSATA BL  USB 2.0 IC • • • • • • •  JEDEC SOD-923 package  Molding compound flammability rating: UL 94V-0 Dimensions and Pin Configuration 1 1 TPESD9L5.0T5G Low Capacitance Uni-Directional TVS Diode WWW.SOT23.COM.TW PROTECTION PRODUCTS Absolute Maximum Rating Operating Junction &StorageTemperature: -55°C to +150°C Parameter IEC61000-4-2(ESD) Symbol Air Contact ESD Voltage per human body mode Peak Pulse Power(8/20us) Ppp Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP @ 25°C Unless Otherwise Specified Maximum Reverse Leakage Current @ VRWM Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation VC VBR VRWM PU Breakdown Voltage @ IT I IF Working Peak Reverse Voltage IT C KV W V IR VF IT IPP CH IR VBR KV Parameter IPP VRWM unit BL Symbol Limits f20 f15 16 100 IC ELECTRICAL CHARACTERISTICS PER LINE Capacitance @ VR = 0 and f = 1.0 MHz TE • Uni−Directional TVS Conditions Min. Typ. Max. Units 5 V 8.5 V Parameter Symbol Working Voltage VRWM Breakdown Voltage VBR It =1mA Reverse Leakage Current IR VRWM =5V Forward Voltage VF IF =10mA Clamping Voltage VC IPP=1A tP = 8/20μS 14 V Junction Capacitance VC IPP=4A tP = 8/20μS 25 V Junction Capacitance Cj VR=0V f = 1MHz 2 5.4 7.0 0.8 0.5 1 μA 1.25 V pF TPESD9L5.0T5G Low Capacitance Uni-Directional TVS Diode WWW.SOT23.COM.TW PROTECTION PRODUCTS Typical charateristics Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 30 t - Time ( s) Power Derating Curve 110 100 CH 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 tr = 0.7~1ns 30ns TE % of Rated Power 10% PU Fig3. IC 80 90% BL IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 150 Ambient Temperature –TA (ºC) 3 60ns Time (ns) TPESD9L5.0T5G Low Capacitance Uni-Directional TVS Diode WWW.SOT23.COM.TW Outline Drawing - SOD-9 23 A B DIM C A B C D E F D TE CH PU F BL IC E DIMENSIONS INCHES MM MAX MIN MAX MIN .037 .041 0.95 1.05 .030 .033 0.75 0.85 .022 .026 0.55 0.65 .014 .017 0.36 0.43 .006 .010 0.15 0.25 .003 .007 0.07 0.17 Land Pattern - SOD-9 23 0.90 mm 0.40mm 0.30mm 4 NOTE
TPESD9L5.0T5G 价格&库存

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TPESD9L5.0T5G
    •  国内价格
    • 20+0.17583
    • 200+0.13932
    • 600+0.11913
    • 2000+0.10692
    • 8000+0.09645
    • 16000+0.09072

    库存:2834

    TPESD9L5.0T5G
    •  国内价格
    • 1+0.08250
    • 10+0.07571
    • 30+0.07435

    库存:100