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TPESD9L5.0ST5G

TPESD9L5.0ST5G

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOD923

  • 描述:

    ESD抑制器/TVS二极管 VRWM=5V VBR(Min)=5.4V VC=15V IPP=4A SOD923

  • 数据手册
  • 价格&库存
TPESD9L5.0ST5G 数据手册
TPESD9L5.0ST5G Low Capacitance Uni-directional TVS Diode www.sot23.com.tw Features Mechanical Characteristics 80W peak pulse power (8/20 μs)  Protects one data or power line  Operating voltage: 5V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±20kV Contact discharge: ±15kV – IEC61000-4-5 (SURGE) 4.5A (8/20us)   Ultra low leakage: nA level   UL Flammability Classification Rating 94V-0 Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020  Mobile Phones and Accessories  Battery Protection  USB VBus  Power Line Protection LI 7”  PU B 8000 Reel Size Hand Held Portable Applications CH Dimensions and Pin Configuration TE TPESD9L5.0ST5G Qty per Reel Package:SOD-923(0402) Applications Ordering Information Part Number  C  1 TPESD9L5.0ST5G Low Capacitance Uni-directional TVS Diode www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 80 W Peak Pulse Current (8/20µs) IPP 4.5 A ESD per IEC 61000−4−2 (Air) ±20 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±15 TJ −55 to +125 °C Tstg −55 to +150 °C Symbol Reverse Working Voltage VRWM VBR IT = 1mA(Pin1-Pin2) Reverse Leakage Current IR Clamping Voltage VC Clamping Voltage VC PU B Breakdown Voltage Test Condition LI Parameter C Electrical Characteristics (TA=25°C unless otherwise specified) CJ VR = 0V, f = 1MHz 5.4 Typ 6.7 VRWM = 5.0V(Pin2-Pin1) CH IPP = 1A (8 x 20us pulse) (Pin1-Pin2) IPP = 4A (8 x 20us pulse) (Pin1-Pin2) TE Junction Capacitance Min 2 0.5 Max Unit 5 V 8.5 V 0.08 µA 9 V 15 V pF TPESD9L5.0ST5G Low Capacitance Uni-directional TVS Diode www.sot23.com.tw Characteristic Curves Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 80 BL 60 40 0 5 10 15 20 Fig3. Power Derating Curve 30 TE % of Rated Power 110 100 25 CH t - Time ( s) PU td=t IPP/2 20 0 90 80 70 60 50 40 30 20 10 0 0 25 50 75 90% IC IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 100 125 150 Ambient Temperature –TA (ºC) 3 10% tr = 0.7~1ns 30ns 60ns Time (ns) TPESD9L5.0ST5G Low Capacitance Uni-directional TVS Diode www.sot23.com.tw Outline Drawing - SOD-9 23(0402) A B C A B C D E F BL E PU D TE CH F DIMENSIONS INCHES MM MAX MIN MAX MIN .037 .041 0.95 1.05 .030 .033 0.75 0.85 .022 .026 0.55 0.65 .014 .017 0.36 0.43 .006 .010 0.15 0.25 .003 .007 0.07 0.17 IC DIM Land Pattern - SOD-9 23(0402) 0.90 mm 0.40mm 0.30mm 4 NOTE
TPESD9L5.0ST5G 价格&库存

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TPESD9L5.0ST5G
    •  国内价格
    • 20+0.22313
    • 200+0.18026
    • 600+0.15650
    • 2000+0.14224
    • 8000+0.10757
    • 16000+0.10088

    库存:15638

    TPESD9L5.0ST5G
    •  国内价格
    • 5+0.17926
    • 20+0.16325
    • 100+0.14725
    • 500+0.13124
    • 1000+0.12377
    • 2000+0.11844

    库存:771