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TPESD9B3.3ST5G

TPESD9B3.3ST5G

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOD923

  • 描述:

    TVS二极管 VRWM=3.3 V VBR(Min)=3.6 V VC=10 V IPP=8 A Ppp=80 W SOD923

  • 数据手册
  • 价格&库存
TPESD9B3.3ST5G 数据手册
TPESD9B3.3ST5G 1-Line Bi-directional Diode www.sot23.com.tw Features Mechanical Characteristics 80W peak pulse power (8/20 μs)  Protects one data or power line  Operating voltage: ±3.3V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (SURGE) 8A (8/20us)   Ultra low leakage: nA level   UL Flammability Classification Rating 94V-0 Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020  Mobile Phones and Accessories  Battery Protection  USB VBus  Power Line Protection LI 7”  Hand Held Portable Applications CH PU B 8000 Reel Size Dimensions and Pin Configuration TE TPESD9B3.3ST5G Qty per Reel Package:SOD-923(0402) Applications Ordering Information Part Number  C  1 TPESD9B3.3ST5G 1-Line Bi-directional Diode www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 80 W Peak Pulse Current (8/20µs) IPP 8 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±30 TJ −55 to +125 °C Tstg −55 to +150 °C Reverse Working Voltage Breakdown Voltage VRWM VBR IR Clamping Voltage VC Clamping Voltage VC IT = 1mA(Pin1-Pin2) IPP = 1A (8 x 20us pulse) (Pin1-Pin2) IPP = 8A (8 x 20us pulse) (Pin1-Pin2) VR = 0V, f = 1MHz (Pin1-Pin2) TE CJ Min 3.6 Typ 4 VRWM = 3.3 . V(Pin2 -Pin1) CH Reverse Leakage Current Junction Capacitance Test Condition LI Symbol PU B Parameter C Electrical Characteristics (TA=25°C unless otherwise specified) 2 15 Max Unit 3.3 V 5.6 V 0.08 µA 7 V 10 V pF TPESD9B3.3ST5G 1-Line Bi-directional Diode www.sot23.com.tw Characteristic Curves Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 80 BL 60 40 0 5 10 15 20 Fig3. Power Derating Curve 30 TE % of Rated Power 110 100 25 CH t - Time ( s) PU td=t IPP/2 20 0 90 80 70 60 50 40 30 20 10 0 0 25 50 75 90% IC IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 100 125 150 Ambient Temperature –TA (ºC) 3 10% tr = 0.7~1ns 30ns 60ns Time (ns) TPESD9B3.3ST5G 1-Line Bi-directional Diode www.sot23.com.tw Outline Drawing - SOD-9 23(0402) A B C A B C D E F BL E PU D TE CH F DIMENSIONS INCHES MM MAX MIN MAX MIN .037 .041 0.95 1.05 .030 .033 0.75 0.85 .022 .026 0.55 0.65 .014 .017 0.36 0.43 .006 .010 0.15 0.25 .003 .007 0.07 0.17 IC DIM Land Pattern - SOD-9 23(0402) 0.90 mm 0.40mm 0.30mm 4 NOTE
TPESD9B3.3ST5G 价格&库存

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TPESD9B3.3ST5G
  •  国内价格
  • 5+0.15532
  • 50+0.14161
  • 500+0.12791
  • 1000+0.11420
  • 2500+0.10781
  • 5000+0.10233

库存:5633

TPESD9B3.3ST5G
    •  国内价格
    • 10+0.24905
    • 100+0.19602
    • 300+0.16956
    • 1000+0.14958
    • 5000+0.13371
    • 8000+0.12572

    库存:25799