TPESD5B5VL-2/TR

TPESD5B5VL-2/ TR Bi -directional TVS Diode www.sot23.com.tw Mechanical Characteristics Features  Protects one data or power line  Ultra low leakage: nA level  Low operating voltage: 5V  Low clamping voltage  Complies with following standards: – IEC 61000-4Air discharge: ±15kV Contact discharge: ±8kV – IEC61000-4-4 (EFT) 40A (5/50ns) RoHS Compliant Package: SOD-523  Lead Finish: Matte Tin  Case Material: “Green” Molding Compound.  UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below Applications   Ordering Information 7”  Portable Instrumentation  Digital Cameras  Peripherals  Audio Players  Keypads, Side Keys, LCD Displays,USB2.0 PU 3000 Reel Size Notebooks and Handhelds CH TPESD5B5VL-2/TR Qty per Reel Personal Digital Assistants TE Part Number Cellular Handsets and Accessories BL  IC   Dimensions and Pin Configuration 1 TPESD5B5VL-2/ TR Bi -directional TVS Diode www.sot23.com.tw Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol ESD per IEC 61000−4−2 (Air) Value ±15 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range Unit kV ±8 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VBR Maximum Reverse Leakage Current @ VRWM Test Current Forward Current Forward Voltage @ IF Ppk Peak Power Dissipation CH IF VF Parameter Reverse Working Voltage Breakdown Voltage Symbol Min V Uni−Directional TVS Typ VRWM VBR IR VF IT IPP Capacitance @ VR = 0 and f = 1.0 MHz TE C VC VBR VRWM Breakdown Voltage @ IT IT IF BL IR Working Peak Reverse Voltage I PU VRWM IC Symbol Max Unit 5 V 6 Test Condition V IT = 1mA Reverse Leakage Current IR 200 nA VRWM = 5V Clamping Voltage VC 10 V IPP = 1A (8 x 20µs pulse) Junction Capacitance CJ 3 pF VR = 0V, f = 1MHz 2.5 2 WWW.TECHPUBLIC.COM.TW Typical Performance Characteristics (TA=25°C unless otherwise Specified) 10 4 Peak Power_Ppp(kW) Junction CapacitanceCj(pF) 5 3 2 1 1 0.1 0.01 0 1 2 3 4 Reverse Voltage_VR(V) 0.1 5 Junction Capacitance vs. Reverse Voltage 10 Pulse Duration_tp(uS) 100 Peak Pulse Power vs. Pulse Time 120 100 BL Peak Pulse Current (Ipp) 90 70 60 PU Ipp/2 50 40 CH 30 % of Rated Power 100 80 20 10 0 0 TE % of Peak Pulse Current 1 IC 0 20 40 Time_t(uS) 60 80 60 40 20 0 0 80 25 50 75 100 125 Ambient Temperature_Ta(℃) 150 Power Derating Curve 8 X 20uS Pulse Waveform ESD Clamping Voltage ESD Clamping Voltage +8 kV Contact per IEC61000−4−2 -8 kV Contact per IEC61000−4−2 3 WWW.TECHPUBLIC.COM.TW TPESD5B5VL-2/ TR Bi -directional TVS Diode www.sot23.com.tw BL IC SOD-523 Package Outline Drawing TE CH PU Suggested Land Pattern 4 WWW.TECHPUBLIC.COM.TW