TPD4EUSB30DQAR-TP

TPD4EUSB30DQ AR-TP 4-Line Uni-directional TVS Diode www.sot23.com.tw Features Mechanical Characteristics u 100 Watts Peak Pulse Power per Line (tp=8/20μs) u Package: DFN2510-10 (2.5×1.0×0.5mm) u Protects two or four I/O lines u Ultra low leakage: nA level u Low capacitance: 0.3pF typical (I/O to I/O) u Case Material: “Green” Molding Compound. u Low operating voltage: 5V u UL Flammability Classification Rating 94V-0 u RoHS Compliant u Moisture Sensitivity: Level 3 per J-STD-020 u IEC61000-4-2 (ESD) ±25kV (air), ±20kV (contact) u Terminal Connections: See Diagram Below u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 4A (8/20μs) IC Applications 7” PU 3000 Reel Size CH TPD4EUSB30DQAR-TP Qty per Reel Digital Visual Interface (DVI) u Unified Display Interface (UDI) u MDDI Ports u PCI Express u Serial ATA Dimensions and Pin Configuration TE Part Number High Definition Multimedia Interface (HDMI) u BL Ordering Information u TPD4EUSB30DQ AR-TP 4-Line Uni-directional TVS Diode www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 100 W Peak Pulse Current (8/20µs) IPP 4 A ESD per IEC 61000−4−2 (Air) ±25 VESD ESD per IEC 61000−4−2 (Contact) TJ −55 to +125 IC Operating Temperature Range ±20 Storage Temperature Range Tstg −55 to +150 kV °C °C Symbol Reverse Working Voltage VBR Reverse Leakage Current Clamping Voltage 6 8 VC TE Clamping Voltage IR Typ CH Breakdown Voltage VRWM Min Max PU Parameter BL Electrical Characteristics (TA=25°C unless otherwise specified) VC Junction Capacitance CJ 0.3 Junction Capacitance CJ 0.6 Unit Test Condition 5 V Any I/O pin to ground 9 V IT = 1mA, any I/O pin to ground 0.4 µA VRWM = 5V, any I/O pin to ground 9 V IPP = 1A (8 x 20µs pulse), any I/O pin to ground 25 V IPP =4A (8 x 20us pulse), any I/O pin to ground pF VR = 0V, f = 1MHz, between I/O pins pF VR = 0V, f = 1MHz, any I/O pin to ground 0.8 TPD4EUSB30DQ AR-TP 4-Line Uni-directional TVS Diode www.sot23.com.tw Characteristic Curves 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) tr 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 CH 0.1 TE Peak Pulse Power - PPK (kW) 1 0.01 0.1 1 10 100 Pulse Duration - tp (μs) 1000 tr = 0.7~1ns Time (ns) 60ns Fig4. Normalized Capacitance vs. Reverse Voltage PU Non - Repetitive Peak Pulse Power vs. Pulse Time 10 10% 30ns 30 t - Time (μs) Fig3. 90% BL IPP - Peak Pulse Current - % of IPP 120 IC Fig1. TPD4EUSB30DQ AR-TP 4-Line Uni-directional TVS Diode www.sot23.com.tw Application Information   1 2 3 GND 8 4 1 2 3 GND 8 4 BL 5 1 2 3 TE 8 PU GND IC 5 CH     ESD protection for HDMI port     TMDS_D2+ TMDS_D2_   TMDS_GND   TMDS_D1+   TMDS_D1_   TMDS_D0+   TMDS_D0_   TMDS_GND TMDS_CK+   TMDS_CK_   CE_REMOTE   DDC_CLK     DDC_DAT   HOTPLUG_DET       4 5 IC TPD4EUSB30DQ AR-TP 4-Line Uni-directional TVS Diode www.sot23.com.tw Outline Drawing - DFN2510-10 D B DIM E A SEATING PLANE aaa C A2 b1xN bbb R0.125 1 2 C A B PU E/2 C A1 A A1 A2 b b1 D E e L N aaa bbb BL PIN 1 INDICATOR (LASER MARK) DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .020 .023 .026 0.50 0.58 0.65 0.00 .001 .002 0.00 0.03 0.05 (.005) (0.13) .006 .008 .010 0.15 0.20 0.25 .014 .016 .018 0.35 0.40 0.45 .094 .098 .102 2.40 2.50 2.60 .035 .039 .043 0.90 1.00 1.10 .020 BSC 0.50 BSC .012 .015 .017 0.30 0.38 0.425 8 8 0.08 .003 0.10 .004 IC A LxN 2X R0.075 7 PLACES CH N bxN e bbb C A B TE D/2 Land Pattern - DFN2510-10 P1 P DIMENSIONS Y Z (C) (Y1) G X X1 DIM C G P P1 X X1 Y Y1 Z INCHES (.034) .008 .020 .039 .008 .016 .027 (.061) .061 MILLIMETERS (0.875) 0.20 0.50 1.00 0.20 0.40 0.675 (1.55) 1.55