TPD2E009DBZ R-TP
Low Capacitance TVS Diode Array
www.sot23.com.tw
Features
Mechanical Characteristics
⚫ Package: SOT-23
⚫ Lead Finish: Matte Tin
⚫ Ultra low capacitance: 0.35pF typical
⚫ Ultra low leakage: nA level
⚫ Case Material: “Green” Molding Compound.
⚫ Moisture Sensitivity: Level 3 per J-STD-020
⚫ Low operating voltage: ±5V
⚫ Low clamping voltage
⚫ Terminal Connections: See Diagram Below
⚫ Complies with following standards:
⚫ – IEC 61000-4-2 (ESD) immunity test
Applications
Air discharge: ±20kV
Contact discharge: ±15kV
- - (Lightning)4A (8/20μs)
μs)
⚫ – IEC61000-4-5
⚫ RoHS Compliant
⚫ Laptop Computers
⚫ Cellular Phones
⚫ Digital Cameras
⚫ Personal Digital Assistants (PDAs)
Ordering Information
Qty per Reel
Reel Size
7”
台
舟
TPD2E009DBZR-TP 3000
电
Part Number
子
⚫ Lead Finish: NiPdAu
Dimensions and Pin Configuration
CH1
1
3
CH2
2
CH3
TPD2E009DBZ R-TP
Low Capacitance TVS Diode Array
www.sot23.com.tw
Absolute Maximum Ratings (Tamb=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power (8/20µs)
Ppk
75
W
Peak Pulse Current (8/20µs)
Ipp
4
A
ESD per IEC 61000−4−2 (Air)
±30
VESD
ESD per IEC 61000−4−2 (Contact)
Storage Temperature Range
kV
TJ
−55 to +125
°C
Tstg
−55 to +150
°C
台
TE
舟
CH
电
PU
B子L
IC
Operating Temperature Range
±30
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Min
Typ
VRWM
VBR
6.5
Max
Unit
5
V
9
V
Test Condition
IT = 1mA
Reverse Leakage Current
IR
0.08
uA
Clamping Voltage
VC
9
V
Ipp=1A(8x 20us pulse)
VC
14
V
Ipp=4A(8x 20us pulse)
0.6
pF
VR = 0V, f = 1MHz (IO to GND)
pF
VR = 0V, f = 1MHz (IO to IO)
Clamping Voltage
Junction Capacitance
CJ
0.5
Junction Capacitance
CJ
0.35
VRWM = 5V
TPD2E009DBZ R-TP
Low Capacitance TVS Diode Array
www.sot23.com.tw
Typical Performance Characteristics (TA=25°C unless otherwise Specified)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
Fig1. 8/20µ s Pulse Waveform
120
IPP - Peak Pulse Current - % of IPP
100
100%
TEST
WAVEFORM
PARAMETERS
tr=8 s
td=20 s
Peak Value IPP
80
Percent of Peak Pulse Current %
tr
60
40
td=t IPP/2
0
0
5
10
15
20
25
t - Time ( s)
Power Derating Curve
舟
台
% of Rated Power
110
100
90
80
70
60
50
40
30
20
10
0
30
电
Fig3.
0
25
50
75
100
125
Ambient Temperature –TA (ºC)
10%
子
20
90%
150
tr = 0.7~1ns
30ns
60ns
Time (ns)
TPD2E009DBZ R-TP
Low Capacitance TVS Diode Array
www.sot23.com.tw
Outline Drawing - SOT23
D
A
DIM
e1
H
3
B
E1
GAUGE
PLANE
SEATING
PLANE
E
C
0
c
0.25
L
L1
DETAIL A
2
bxN
bbb
e
C A B
A2
aaa C
3X
电
A
子
1
SEATING PLANE
A1
SIDE VIEW
台
舟
C
Land Pattern - SOT23
X
Y
DIM
Z
G
Y
E
E1
C
C
E
E1
G
X
Y
Z
DIMENSIONS
INCHES
MILLIMETERS
(.087)
.037
.075
.031
.039
.055
.141
(2.20)
0.95
1.90
0.80
1.00
1.40
3.60
SEE DETAIL A
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
N
0
aaa
bbb
DIMENSIONS
INCHES
MILLIMETERS
MIN NOM MAX MIN NOM MAX
.035
.000
.035
.012
.003
.110
.082
.047
.015
0°
.037
.114
.093
.051
.075
.037
.020
.022
3
.004
.008
.044
.004
.040
.020
.007
.120
.104
.055
.024
8°
0.89
1.12
0.01
0.10
0.88 0.95 1.02
0.30
0.51
0.08
0.18
2.80 2.90 3.04
2.10 2.37 2.64
1.20 1.30 1.40
1.90 BSC
0.95 BSC
0.40 0.50 0.60
(0.55)
3
0°
8°
0.10
0.20
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