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TPD2E009DBZR-TP

TPD2E009DBZR-TP

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOT23-3L

  • 描述:

    ESD抑制器/TVS二极管 VRWM=5V VBR(min)=6.5V VC=14V@IPP=4A SOT23-3

  • 数据手册
  • 价格&库存
TPD2E009DBZR-TP 数据手册
TPD2E009DBZ R-TP Low Capacitance TVS Diode Array www.sot23.com.tw Features Mechanical Characteristics ⚫ Package: SOT-23 ⚫ Lead Finish: Matte Tin ⚫ Ultra low capacitance: 0.35pF typical ⚫ Ultra low leakage: nA level ⚫ Case Material: “Green” Molding Compound. ⚫ Moisture Sensitivity: Level 3 per J-STD-020 ⚫ Low operating voltage: ±5V ⚫ Low clamping voltage ⚫ Terminal Connections: See Diagram Below ⚫ Complies with following standards: ⚫ – IEC 61000-4-2 (ESD) immunity test Applications Air discharge: ±20kV Contact discharge: ±15kV - - (Lightning)4A (8/20μs) μs) ⚫ – IEC61000-4-5 ⚫ RoHS Compliant ⚫ Laptop Computers ⚫ Cellular Phones ⚫ Digital Cameras ⚫ Personal Digital Assistants (PDAs) Ordering Information Qty per Reel Reel Size 7” 台 舟 TPD2E009DBZR-TP 3000 电 Part Number 子 ⚫ Lead Finish: NiPdAu Dimensions and Pin Configuration CH1 1 3 CH2 2 CH3 TPD2E009DBZ R-TP Low Capacitance TVS Diode Array www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 75 W Peak Pulse Current (8/20µs) Ipp 4 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Storage Temperature Range kV TJ −55 to +125 °C Tstg −55 to +150 °C 台 TE 舟 CH 电 PU B子L IC Operating Temperature Range ±30 Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR 6.5 Max Unit 5 V 9 V Test Condition IT = 1mA Reverse Leakage Current IR 0.08 uA Clamping Voltage VC 9 V Ipp=1A(8x 20us pulse) VC 14 V Ipp=4A(8x 20us pulse) 0.6 pF VR = 0V, f = 1MHz (IO to GND) pF VR = 0V, f = 1MHz (IO to IO) Clamping Voltage Junction Capacitance CJ 0.5 Junction Capacitance CJ 0.35 VRWM = 5V TPD2E009DBZ R-TP Low Capacitance TVS Diode Array www.sot23.com.tw Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP 80 Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 0 0 5 10 15 20 25 t - Time ( s) Power Derating Curve 舟 台 % of Rated Power 110 100 90 80 70 60 50 40 30 20 10 0 30 电 Fig3. 0 25 50 75 100 125 Ambient Temperature –TA (ºC) 10% 子 20 90% 150 tr = 0.7~1ns 30ns 60ns Time (ns) TPD2E009DBZ R-TP Low Capacitance TVS Diode Array www.sot23.com.tw Outline Drawing - SOT23 D A DIM e1 H 3 B E1 GAUGE PLANE SEATING PLANE E C 0 c 0.25 L L1 DETAIL A 2 bxN bbb e C A B A2 aaa C 3X 电 A 子 1 SEATING PLANE A1 SIDE VIEW 台 舟 C Land Pattern - SOT23 X Y DIM Z G Y E E1 C C E E1 G X Y Z DIMENSIONS INCHES MILLIMETERS (.087) .037 .075 .031 .039 .055 .141 (2.20) 0.95 1.90 0.80 1.00 1.40 3.60 SEE DETAIL A A A1 A2 b c D E E1 e e1 L L1 N 0 aaa bbb DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .035 .000 .035 .012 .003 .110 .082 .047 .015 0° .037 .114 .093 .051 .075 .037 .020 .022 3 .004 .008 .044 .004 .040 .020 .007 .120 .104 .055 .024 8° 0.89 1.12 0.01 0.10 0.88 0.95 1.02 0.30 0.51 0.08 0.18 2.80 2.90 3.04 2.10 2.37 2.64 1.20 1.30 1.40 1.90 BSC 0.95 BSC 0.40 0.50 0.60 (0.55) 3 0° 8° 0.10 0.20
TPD2E009DBZR-TP 价格&库存

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TPD2E009DBZR-TP
  •  国内价格
  • 1+0.44814
  • 10+0.43117
  • 100+0.39043
  • 500+0.37006

库存:515

TPD2E009DBZR-TP
    •  国内价格
    • 5+0.71378
    • 50+0.57024
    • 150+0.49853
    • 500+0.44475
    • 3000+0.40176
    • 6000+0.38016

    库存:14922

    TPD2E009DBZR-TP
    •  国内价格
    • 1+0.70670

    库存:500