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TPD1E10B06DPYR-TP

TPD1E10B06DPYR-TP

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    DFN1006-2

  • 描述:

    ESD抑制器/TVS二极管 VRWM=5V VBR(Min)=6V VC=9V IPP=7A DFN1006-2

  • 数据手册
  • 价格&库存
TPD1E10B06DPYR-TP 数据手册
TPD1E10B06DPYR-TR Bi -directional TVS Diode WWW.SOT23.COM.TW Mechanical Characteristics Features  Protects one data or power line  Package: DFN1006-2  Ultra low leakage: nA level  Lead Finish: Matte Tin  Low operating voltage: 5V  Case Material: “Green” Molding Compound.  Low clamping voltage  UL Flammability Classification Rating 94V-0  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns)  Moisture Sensitivity: Level 3 per J-STD-020  Terminal Connections: See Diagram Below RoHS Compliant   Ordering Information Qty per Reel IC 7” 10000 CH TPD1E10B06DPYR Reel Size   PU Part Number Cellular Handsets & Accessories Digital Visual Interface (DVI) Display Port MDDI Ports USB Ports PCI Express Serial ATA BL    TE  Applications Dimensions and Pin Configuration TPD1E10B06DPYR-TR Bi -directional TVS Diode WWW.SOT23.COM.TW Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit IPP 7 A Peak Pulse Current (8/20µs) ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range TJ −55 to +125 °C Tstg −55 to +150 °C IC Storage Temperature Range kV ±30 Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Nominal Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Reverse Breakdown Voltage @ IT PU VRWM Test Current for Reverse Breakdown VC Clamping Voltage @ IPP IPP Maximum Peak Pulse Current f VC VBR VRWM IT IR IR IT VRWM VBR VC V Parasitic Capacitance Reverse Voltage TE VR I IPP CH IT CESD BL Symbol IPP Small Signal Frequency Parameter Reverse Working Voltage Breakdown Voltage Symbol Bi-Directional TVS Min Typ VRWM VBR 6 7 Max Unit Test Condition 5 V 9 V IT = 1mA Reverse Leakage Current IR 0.2 uA VRWM = 5V Clamping Voltage VC 7 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 9 V IPP = 7A (8 x 20 s pulse) Junction Capacitance CJ 15 pF VR = 0V, f = 1MHz TPD1E10B06DPYR-TR Bi -directional TVS Diode WWW.SOT23.COM.TW Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 30 t - Time ( s) Power Derating Curve tr = 0.7~1ns Time (ns) 30ns 60ns CH 110 100 90 80 70 60 50 40 30 20 10 0 TE % of Rated Power 10% PU Fig3. IC 80 90% BL IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 0 25 50 75 100 125 150 Ambient Temperature –TA (ºC) WWW.TECHPUBLIC.COM.TW TPD1E10B06DPYR-TR Bi -directional TVS Diode WWW.SOT23.COM.TW Outline Drawing - DFN1006-2 e D h A DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.45 0.50 0.55 0.018 0.020 0.022 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.45 0.50 0.55 0.018 0.020 0.022 c 0.12 0.15 0.18 0.005 0.006 0.007 D 0.95 1.00 1.05 0.037 0.039 0.041 SYM - b E - L c A Bottom View IC h 0.65 BSC 0.026 BSC E 0.55 0.60 0.65 0.022 0.024 0.026 L 0.20 0.25 0.30 0.008 0.010 0.012 h 0.07 0.12 0.17 0.003 0.005 0.007 PU A1 BL e TE CH Land Pattern - DFN1006-2 ╋ Y3 Y2 DIMENSIONS MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 Y1 Z ╋ SYM X WWW.TECHPUBLIC.COM.TW
TPD1E10B06DPYR-TP 价格&库存

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TPD1E10B06DPYR-TP
  •  国内价格
  • 5+0.10855
  • 20+0.09880
  • 100+0.08905
  • 500+0.07930
  • 1000+0.07475
  • 2000+0.07150

库存:6842