TPD1E10B06DPYR-TR
Bi -directional TVS Diode
WWW.SOT23.COM.TW
Mechanical Characteristics
Features
Protects one data or power line
Package: DFN1006-2
Ultra low leakage: nA level
Lead Finish: Matte Tin
Low operating voltage: 5V
Case Material: “Green” Molding Compound.
Low clamping voltage
UL Flammability Classification Rating 94V-0
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
RoHS Compliant
Ordering Information
Qty per Reel
IC
7”
10000
CH
TPD1E10B06DPYR
Reel Size
PU
Part Number
Cellular Handsets & Accessories
Digital Visual Interface (DVI)
Display Port
MDDI Ports
USB Ports
PCI Express
Serial ATA
BL
TE
Applications
Dimensions and Pin Configuration
TPD1E10B06DPYR-TR
Bi -directional TVS Diode
WWW.SOT23.COM.TW
Absolute Maximum Ratings (Tamb=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
IPP
7
A
Peak Pulse Current (8/20µs)
ESD per IEC 61000−4−2 (Air)
±30
VESD
ESD per IEC 61000−4−2 (Contact)
Operating Temperature Range
TJ
−55 to +125
°C
Tstg
−55 to +150
°C
IC
Storage Temperature Range
kV
±30
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Nominal Reverse Working Voltage
IR
Reverse Leakage Current @ VRWM
VBR
Reverse Breakdown Voltage @ IT
PU
VRWM
Test Current for Reverse Breakdown
VC
Clamping Voltage @ IPP
IPP
Maximum Peak Pulse Current
f
VC VBR VRWM
IT
IR
IR
IT
VRWM VBR VC V
Parasitic Capacitance
Reverse Voltage
TE
VR
I
IPP
CH
IT
CESD
BL
Symbol
IPP
Small Signal Frequency
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Bi-Directional TVS
Min
Typ
VRWM
VBR
6
7
Max
Unit
Test Condition
5
V
9
V
IT = 1mA
Reverse Leakage Current
IR
0.2
uA
VRWM = 5V
Clamping Voltage
VC
7
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
9
V
IPP = 7A (8 x 20 s pulse)
Junction Capacitance
CJ
15
pF
VR = 0V, f = 1MHz
TPD1E10B06DPYR-TR
Bi -directional TVS Diode
WWW.SOT23.COM.TW
Typical Performance Characteristics (TA=25°C unless otherwise Specified)
Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
Fig1. 8/20µ s Pulse Waveform
120
60
40
td=t IPP/2
20
0
0
5
10
15
20
25
30
t - Time ( s)
Power Derating Curve
tr = 0.7~1ns
Time (ns)
30ns
60ns
CH
110
100
90
80
70
60
50
40
30
20
10
0
TE
% of Rated Power
10%
PU
Fig3.
IC
80
90%
BL
IPP - Peak Pulse Current - % of IPP
100
100%
TEST
WAVEFORM
PARAMETERS
tr=8 s
td=20 s
Peak Value IPP
Percent of Peak Pulse Current %
tr
0
25
50
75
100
125
150
Ambient Temperature –TA (ºC)
WWW.TECHPUBLIC.COM.TW
TPD1E10B06DPYR-TR
Bi -directional TVS Diode
WWW.SOT23.COM.TW
Outline Drawing - DFN1006-2
e
D
h
A
DIMENSIONS
MILLIMETERS
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
0.45
0.50
0.55
0.018
0.020
0.022
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.45
0.50
0.55
0.018
0.020
0.022
c
0.12
0.15
0.18
0.005
0.006
0.007
D
0.95
1.00
1.05
0.037
0.039
0.041
SYM
-
b
E
-
L
c
A
Bottom View
IC
h
0.65 BSC
0.026 BSC
E
0.55
0.60
0.65
0.022
0.024
0.026
L
0.20
0.25
0.30
0.008
0.010
0.012
h
0.07
0.12
0.17
0.003
0.005
0.007
PU
A1
BL
e
TE
CH
Land Pattern - DFN1006-2
╋
Y3
Y2
DIMENSIONS
MILLIMETERS
INCHES
X
0.60
0.024
Y1
0.50
0.020
Y2
0.30
0.012
Y3
0.80
0.032
Z
1.30
0.052
Y1
Z
╋
SYM
X
WWW.TECHPUBLIC.COM.TW
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