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TPCJ2101

TPCJ2101

  • 厂商:

    TECHPUBLIC(台舟电子)

  • 封装:

    SOT-323

  • 描述:

    类型:P沟道 漏源电压(Vdss):20V 连续漏极电流(Id):1.4A 功率(Pd):290mW 导通电阻(RDS(on)@Vgs,Id):100mΩ@4.5V,1A 阈值电压(Vgs(th)@I...

  • 数据手册
  • 价格&库存
TPCJ2101 数据手册
TPCJ 21 01 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications ● VDS ● ID ● RDS(ON)( at VGS=2.5V) ● RDS(ON)( at VGS=4.5V) ƽ Battery protection -20V -1.4A <140mΩ <100mΩ ƽ Load switch ƽ Power management  w PU BL Reel Size H TPCJ2101 Qty per Reel TE C Part Number IC Ordering Information D S G SOT323 1 TPCJ 21 01 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Value Unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±8 V ID -1.4 Pulsed drain current (tp=10µs) IDM -3.0 Power dissipation PD 0.29 W RΘJA 431 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -50 ~ +150 °C Parameter Continuous drain current TE C H PU BL Thermal resistance from junction to ambient IC A 2 TPCJ 21 01 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw (T A=25°C unless otherwise specified) Electrical Characteristics Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-source breakdown voltage VDSS VGS = 0V , ID = -250µA Gate-source leakage IGSS VDS = 0V , VGS = ±8V ±100 nA Zero gate voltage drain current IDSS VDS = -20V , VGS = 0V -1 µA -20 V OFF CHARACTERISTICS (note 1) VGS(th) RDS(on) Drain-source on-state resistance VDS = VGS , ID = -250µA 100 VGS = -2.5V , ID = -0.5A 140 BL CHARGE AND CAPACITANCES (note 3) Reverse transfer capacitance Crss Rise time Turn-off delay time Fall time TE C SWITCHING CHARACTERISTICS (note 2,3) Turn-on delay time VDS = -8.0V , VGS = 0V, f = 1MHZ mΩ 210 640 pF 120 82 H Coss PU ciss Output capacitance V -0.7 VGS = -4.5V , ID = -1.0A VGS = -1.8V , ID = -0.3A Input capacitance -0.45 IC Gate-source threshold voltage td(on) tr td(off) 6.2 VGS = -4.5V , VDD = -4.0V 15 ID = -1.0A , Rg = 6.2Ω 26 nS 18 tf DRAIN-SOURCE BODY DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0V, IS = -0.3A 3 -0.62 -1.2 V TPCJ 21 01 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Outline Drawing - SOT323 0.087(2.20) 0.079(2.00) D 0.053(1.35) 0.045(1.15) G 0.055(1.40) 0.047(1.20) S 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.016(0.40) 0.008(0.20) BL IC 0.096(2.45) 0.085(2.15) TE C H PU 0.017(0.425)REF. 4
TPCJ2101 价格&库存

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