TPAZ5825-01F

TPAZ 5825-01F 1-Line Bi-directional TVS Diode www.sot23.com.tw Features Mechanical Characteristics ⚫ Package: DFN1006-2 (0402) ⚫ Lead Finish: Matte Tin ⚫ Ultra small package: 1.0x0.6x0.5mm ⚫ Ultra low capacitance: 30pF typical ⚫ Case Material: “Green” Molding Compound. ⚫ Moisture Sensitivity: Level 3 per J-STD-020 ⚫ Ultra low leakage: nA level ⚫ Low operating voltage: ±5V ⚫ Terminal Connections: See Diagram Below ⚫ Shipping Qty : 10000pcs or12000pcs/7InchTape & Reel ⚫ Low clamping voltage ⚫ 2-pin leadless package Applications ⚫ Complies with following standards: ⚫ Cellular Handsets and Accessories Air discharge: ±30kV Contact discharge: ±30kV - - (Lightning)18A (8/20μs) μs) ⚫ – IEC61000-4-5 ⚫ RoHS Compliant ⚫ Personal Digital Assistants ⚫ Notebooks and Handhelds ⚫ Portable Instrumentation ⚫ Digital Cameras ⚫ Lead Finish: NiPdAu ⚫ Peripherals ⚫ Audio Players 子 ⚫ – IEC 61000-4-2 (ESD) immunity test 电 ⚫ Keypads, Side Keys, LCD Displays 舟 Dimensions and Pin Configuration 台 1.0 0.60  0.65  0.50 WWW.TECHPUBLIC.COM.TW TPAZ 5825-01F 1-Line Bi-directional TVS Diode www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 140 W Peak Pulse Current (8/20µs) Ipp 18 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range TJ −55 to +125 °C Tstg −55 to +150 °C 子 Storage Temperature Range kV ±30 Electrical Characteristics (TA=25°C unless otherwise specified) Symbol Reverse Working Voltage VBR Reverse Leakage Current Clamping Voltage IR Unit 5 V V Test Condition IT = 1mA uA 8.7 8.7 V Ipp=1A(8x 20us pulse) VC 8.7 8.7 V Ipp=18A(8x 20us pulse) CJ 30 pF VR = 0V, f = 1MHz VC Junction Capacitance Max 0.08 台 Clamping Voltage Typ 6 舟 Breakdown Voltage VRWM Min 电 Parameter 2 VRWM = 5V WWW.TECHPUBLIC.COM.TW TPAZ 5825-01F 1-Line Bi-directional TVS Diode www.sot23.com.tw Typical Performance Characteristics (TA=25°C unless otherwise Specified) 12 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 40 35 30 25 20 15 10 5 10 8 6 4 2 0 1 2 3 4 VR—Reverse Voltage(V) Junction Capacitance vs. Reverse Voltage 0 1 台 0.1 0.01 0.1 1 -20 10 100 Ipp-Peak Pulse Current-%of Ipp % of Rated Power 100 80 60 40 20 0 75 100 125 150 12 14 16 18 20 0 20 40 60 80 100 80 60 40 20 0 -20 -20 Ambient Temperature_Ta(℃) Power Derating Curve 10 IEC61000−4−2 Pulse Waveform 120 50 8 Time (nS) 120 25 6 100 Pulse Duration_tp(uS) Peak Pulse Power vs. Pulse Time 0 4 Voltage (V) 舟 10 2 Ipp-Peak Pulse Current(A) Clamping Voltage vs. Peak Pulse Current 电 100 Peak Power_Ppp(kW) 0 5 子 0 0 20 40 T-Time(us) 3 8 X 20us Pulse Waveform 60 TPAZ 5825-01F 1-Line Bi-directional TVS Diode www.sot23.com.tw DFN1006-2 Package Outline Drawing (0402) e D h h A A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.45 0.50 0.55 0.018 0.020 0.022 c 0.12 0.15 0.18 0.005 0.006 0.007 D 0.95 1.00 1.05 0.037 0.039 0.041 SYM - b E - DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.45 0.50 0.55 0.018 0.020 0.022 L A1 c A Bottom View 0.65 BSC 子 e 0.026 BSC 0.55 0.60 0.65 0.022 0.024 0.026 L 0.20 0.25 0.30 0.008 0.010 0.012 h 0.07 0.12 0.17 0.003 0.005 0.007 舟 电 E 台 Suggested Land Pattern ╋ Y3 Y2 SYM Y1 Z DIMENSIONS MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 ╋ X 4 WWW.TECHPUBLIC.COM.TW