SLVU2.8-TP

SLVU2.8-TP Low Voltae EPD TVS Diode For ESD an Latch-Up Protection WWW.SOT23.COM.TW Features 150W peak pulse power(8/20µs) One device protects one unidirectional line Two devices protect two high-speed line pairs Ultra low leakage：nA level           Low operating voltage：2.8V Low capacitance Ultra low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 10A (8/20µs)  RoHS Compliant Qty per Reel 3000 Applications BL Base Station Analog Inputs Switch Systems 10/100 Ethernet WAN/LAN Equipment Desktops, Servers, and Notebooks Low Voltage Interfaces Reel Size CH 7” Dimensions and Pin Configuration TE SLVU2.8-TP PU Ordering Information Part Number        Package: SOT-23 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below IC     Mechanical Characteristics 3 1 3 U2.8 2 1 2 SOT23 (Top View) 1 WWW.TPsemi.COM SLVU2.8-TP Low Voltae EPD TVS Diode For ESD an Latch-Up Protection WWW.SOT23.COM.TW Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power(8/20µs) Ppk 150 W Peak Pulse Current(8/20µs) IPP 10 A ESD per IEC 61000−4−2 (Air) ±30 VESD ESD per IEC 61000−4−2 (Contact) TJ −55 to +125 °C Tstg −55 to +150 °C IC Operating Temperature Range kV ±30 BL Storage Temperature Range Electrical Characteristics (TA=25°C unless otherwise specified) Reverse Working Voltage Punch-Through Voltage Clamping Voltage Clamping Voltage Clamping Voltage VRWM VBR Typ Junction Capacitance Max Unit 2.8 V 3.0 Test Condition V I T =2µA IR 0.5 µA VRWM = 2.8V VC 4 V IPP = 1A (8 x 20µs pulse) VC 6 V IPP = 5A (8 x 20µs pulse) VC 9 V IPP = 10A (8 x 20µs pulse) pF VR=0, f=1MHz TE Reverse Leakage Current Min PU Symbol CH Parameter 7 CJ 2 WWW.TPsemi.COM SLVU2.8-TP Low Voltae EPD TVS Diode For ESD an Latch-Up Protection WWW.SOT23.COM.TW Typical Performance Characteristics (TA=25°C unless otherwise Specified) Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) Fig1. 8/20µ s Pulse Waveform 120 80 60 40 td=t IPP/2 0 0 5 10 15 20 25 30 Time (ns) 30ns 60ns CH Power Derating Curve 110 100 90 80 70 60 50 40 30 20 10 0 TE % of Rated Power tr = 0.7~1ns PU t - Time ( s) Fig3. 10% BL 20 90% IC IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8 s td=20 s Peak Value IPP Percent of Peak Pulse Current % tr 0 25 50 75 100 125 150 Ambient Temperature –TA (ºC) 3 WWW.TPsemi.COM SLVU2.8-TP Low Voltae EPD TVS Diode For ESD an Latch-Up Protection TE CH PU BL IC WWW.SOT23.COM.TW 4 WWW.TPsemi.COM